Reconfigurable nanoscale circuit wiring using QD-ReRAM hybrid material system
| Project/Area Number |
24760283
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | Sophia University |
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Principal Investigator |
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2012: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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| Keywords | 抵抗変化メモリ / ナノギャップ電極 / 酸化アルミニウム / ReRAM / 配線 / ナノ構造 / 量子ドット |
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| Research Abstract |
We apply the nanogap and macrogap electrodes for a filament-type ReRAM (Resistance Random Access Memory) material, AlxO1-x, to study the switching mechanism, and to develop novel devices. We have observed unipolar and bipolar behaviors by just changing the separation of the electrodes. The study is very useful for controlling the resistance switching behaviors and revealing the mechanisms.
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Report
(3 results)
Research Products
(10 results)
