Reconfigurable nanoscale circuit wiring using QD-ReRAM hybrid material system

• Project/Area Number: 24760283
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Electron device/Electronic equipment
• Research Institution: Sophia University
• Principal Investigator: NAKAOKA Toshihiro 上智大学, 理工学部, 准教授 (20345143)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2013: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000); Fiscal Year 2012: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
• Keywords: 抵抗変化メモリ / ナノギャップ電極 / 酸化アルミニウム / ReRAM / 配線 / ナノ構造 / 量子ドット

Research Abstract

We apply the nanogap and macrogap electrodes for a filament-type ReRAM (Resistance Random Access Memory) material, AlxO1-x, to study the switching mechanism, and to develop novel devices. We have observed unipolar and bipolar behaviors by just changing the separation of the electrodes. The study is very useful for controlling the resistance switching behaviors and revealing the mechanisms.

Research Products

• [Journal Article] Nanogap Resistance Random Access Memory Based on Natural Aluminum Oxide (2013)
  • Author(s): Toru Miyabe and Toshihiro Nakaoka
  • Journal Title: Jpn. J. Appl. Phys Volume: 52
  • NAID: 210000142090
• [Journal Article] Nanogap Resistance Random Access Memory Based on Natural Aluminum Oxide (2013)
  • Author(s): Toru Miyabe and Toshihiro Nakaoka
  • Journal Title: Japanese Journal of Applied Physics Volume: 52 Issue: 4S Pages: 04CJ08-04CJ08
  • DOI: 10.7567/jjap.52.04cj08
  • NAID: 210000142090
  • Peer Reviewed
• [Journal Article] First-sharp diffraction peaks in amorphous GeTe and Ge2Sb2Te5 films prepared by vacuum-thermal deposition (2012)
  • Author(s): Toshihiro Nakaoka, Hiroki Satoh, Saori Honjo, and Hideo Takeuchi
  • Journal Title: AIP Advances Volume: 2 Pages: 42189-42189
• [Presentation] Good Stoichiometry Achieved by Simple Vacuum-thermal Deposition of GeTe and Ge2Sb2Te5 Thin Films (2012)
  • Author(s): Hiroki Satoh, Toshihiro Nakaoka
  • Organizer: Fifth International Conference on Optical, Optoelectronic and Photonic Materials and Applications (ICOOPMA 12)
  • Year and Date: 2012-06-06
• [Presentation] アルミニウム自然酸化膜を用いたナノギャップReRAM (2012)
  • Author(s): 宮邉徹,中岡俊裕
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 松山大学(2p-C13 - 1)
• [Presentation] Nanogap ReRAM Based on Natural Aluminum Oxide (2012)
  • Author(s): T. Miyabe and T. Nakaoka
  • Organizer: 44th International Conference ,on Solid State Devices and Materials (SSDM 2012)
  • Place of Presentation: Kyoto, Japan(PS-9-7)
• [Presentation] アルミニウム自然酸化膜を用いたナノギャップReRAM
  • Author(s): 宮邉徹、中岡俊裕
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学
• [Presentation] Nanogap ReRAM Based on Natural Aluminum Oxide
  • Author(s): T. Miyabe and T. Nakaoka
  • Organizer: 2012 International Conference on Solid State Devices and Materials (SSDM 2012)
  • Place of Presentation: Kyoto, Japan
• [Remarks]
  • URL: http://pweb.sophia.ac.jp/nakaoka/
• [Remarks] 上智大学 中岡研究室
  • URL: http://pweb.sophia.ac.jp/nakaoka/index.html