Study of development of Heusler-type functional materials for high performance thermoelectric thin films
| Project/Area Number |
24760536
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals
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| Research Institution | Nagoya Institute of Technology |
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Principal Investigator |
MIYAZAKI HIDETOSHI 名古屋工業大学, 工学(系)研究科(研究院), 助教 (10548960)
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| Project Period (FY) |
2012-04-01 – 2014-03-31
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| Project Status |
Completed (Fiscal Year 2013)
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| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,170,000 (Direct Cost: ¥900,000、Indirect Cost: ¥270,000)
Fiscal Year 2012: ¥3,380,000 (Direct Cost: ¥2,600,000、Indirect Cost: ¥780,000)
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| Keywords | 熱電材料 / 電子構造 / 薄膜 / 熱電変換材料 / ホイスラー化合物 / Fe2VAl |
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| Research Abstract |
For the application of thermoelectric materials to power generation, it is desirable to shift the peak temperature of the thermoelectric power factor up to, e.g., 600 K and above. The disadvantages of Fe2VAl-based thermoelectric materials are a peak temperature of the thermoelectric power factor of <400 K and a high thermal conductivity value. To improve the thermoelectric properties of the Fe2VAl-based alloys, the aims of my five-year research project were to explore new doping and substitution elements, and clarify the mechanism by which their thermoelectric properties are improved. The results are:1) Improvement of the thermoelectric properties of the Heusler Fe2VAl alloys due to the fabrication of the off-stoichiometric type Fe2V1+xAl1-x and fourth-element doping type Fe2VAl1-yTay alloys. 2) Clarification of the improvement of the thermoelectric properties of the Heusler Fe2VAl alloys. 3) Development of a thin- film deposition system for the fabrication of Fe2VAl thin films.
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Report
(3 results)
Research Products
(22 results)
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[Journal Article] Atomic and electronic structure of ultrathin Bi(111) films grown on Bi_2Te_3(111) substrates: Evidence for a strain-induced topological phase transition2012
Author(s)
T. Hirahara, N. Fukui, T. Shirasawa, M. Yamada, M. Aitani, H. Miyazaki, M. Matsunami, S. Kimura, T. Takahashi, S. Hasegawa, K. Kobayashi
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Journal Title
Phys. Rev. Lett.
Volume: 109
Issue: 22
Pages: 227401-227401
DOI
Related Report
Peer Reviewed
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