Formation of nanocrystal by low energy electron irradiation in semiconductors
| Project/Area Number |
24760539
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| Research Category |
Grant-in-Aid for Young Scientists (B)
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| Allocation Type | Multi-year Fund |
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| Research Field |
Physical properties of metals
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| Research Institution | Kochi University of Technology |
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Principal Investigator |
NITTA Noriko 高知工科大学, 公私立大学の部局等, 講師 (80412443)
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| Project Period (FY) |
2012-04-01 – 2015-03-31
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| Project Status |
Completed (Fiscal Year 2014)
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| Budget Amount *help |
¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
Fiscal Year 2014: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2013: ¥520,000 (Direct Cost: ¥400,000、Indirect Cost: ¥120,000)
Fiscal Year 2012: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
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| Keywords | 電子照射 / イオン照射 / ナノ結晶 / ナノ構造 / バリアント / 電子顕微鏡 / 集束イオンビーム / 半導体 |
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| Outline of Final Research Achievements |
We recently found that the nanocrystals which has same orientation, are observed in GaSb and InSb low-energy electron (125 keV) irradiated at over 373 K (Nitta et al., Philo. Mag. Lett., 2011). In this study, effects of low-energy electron irradiation in GaSb and InSb were the investigated for indentification of formation mechnism. Additionally, effects of ion beam irradiation were investigated.
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Report
(4 results)
Research Products
(16 results)
