Fabrication and characterization of novel Heusler-type topological insulator thin films
| Project/Area Number |
24760547
|
|---|
| Research Category |
Grant-in-Aid for Young Scientists (B)
|
| Allocation Type | Multi-year Fund |
|---|
| Research Field |
Inorganic materials/Physical properties
|
|---|
| Research Institution | Nagoya University |
|---|
Principal Investigator |
MIYAWAKI Tetsuya 名古屋大学, 工学(系)研究科(研究院), 助教 (10596844)
|
|---|
| Project Period (FY) |
2012-04-01 – 2014-03-31
|
| Project Status |
Completed (Fiscal Year 2013)
|
| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2012: ¥3,120,000 (Direct Cost: ¥2,400,000、Indirect Cost: ¥720,000)
|
|---|
| Keywords | トポロジカル絶縁体 / ホイスラー合金 / LaPtBi / エピタキシャル薄膜 / 光電子分光 |
|---|
| Research Abstract |
Some half-Heusler alloys were predicted to act as topological insulators (TIs). Thin films of half-Heusler TIs are desired as the surface states are expected to arise by introducing uniaxial lattice distortion which opens a gap at the Fermi energy. Great care should be taken to the order/disorder structures to obtain the expected properties in half-Heusler thin films, since the disorder structures lead significant changes of the valence band electronic structures. In this research, epitaxial half-Heusler LaPtBi thin films with high order parameter were successfully grown on single crystalline substrate. Valence band ultraviolet photoelectron spectra exhibited clear structures that are in good agreement with the calculated band structure of half-Heusler LaPtBi. The sample with high order parameter of 0.94 exhibits the low carrier density and the high mobility. The obtained LaPtBi thin films are potential candidates for applications for topological insulator devices.
|
Report
(3 results)
Research Products
(18 results)
-
-
-
[Journal Article] Electrical-field control of magnetism mediated by strain in Ni nanostructures fabricated on pre-poled PMN-PT(011)2013
Author(s)
S. Finizio, M. Foerster, C. A. F. Vaz, C. Mix, M. Mawass, A. Tkach, M. Kläui, M. Buzzi, F. Nolting, T. Miyawaki, et al.
-
Journal Title
SPIN
Volume: 3
Issue: 03
Pages: 1340008-1340008
DOI
Related Report
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
