Development of novel functionalities using phase copetitions in correlated-electron-oxide heterostructures

• Project/Area Number: 24760557
• Research Category: Grant-in-Aid for Young Scientists (B)
• Allocation Type: Multi-year Fund
• Research Field: Inorganic materials/Physical properties
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: YAMADA Hiroyuyki 独立行政法人産業技術総合研究所, 電子光技術研究部門, 主任研究員 (00415762)
• Project Period (FY): 2012-04-01 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000); Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000); Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
• Keywords: 強相関酸化物 / モット転移 / 強誘電体 / 電界効果 / 界面 / ヘテロ接合 / 抵抗スイッチング

Research Abstract

We developed non-volatile device functionalities by combining ferroelectricity with Mott transition, which occurs in correlated-electron oxides by novel mechanisms that cannot be expected in conventional semiconductors. Particularly, we found a nonvolatile resistive switching in a transistor structure consisting of a novel correlated oxide with a Mott transition and a newly-found ferroelectric. The observed switching (ferroelectric field effect) was the largest among this compound family. We revealed the mechanism by focusing on an interface atomic structure between the correlated oxide and ferroelectric.

Research Products

• [Journal Article] Resistive switching characteristics in dielectric/ferroelectric composite devices improved by post-thermal annealing at relatively low temperature (2014)
  • Author(s): A. Tsurumaki-Fukuchi、H. Yamada、A. Sawa
  • Journal Title: Appl. Phys. Lett. Volume: 104 Issue: 9 Pages: 92903-92903
  • DOI: 10.1063/1.4867260
  • Peer Reviewed
• [Journal Article] Magnetic and electronic properties of (LaMnO3)5(SrMnO3)5 superlattice (2014)
  • Author(s): M. Kubota, H. Yamada, H. Nakao, J. Okamoto, Y. Yamasaki, A. Sawa, Y. Murakami
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 5S1 Pages: 05FH07-05FH07
  • DOI: 10.7567/jjap.53.05fh07
  • Peer Reviewed
• [Journal Article] Neutron magnetic scattering study in manganite thin film system (2014)
  • Author(s): H. Nakao, H.Yamada, A.Sawa, K.Iwasa, J.Okamoto, T.Sudayama, Y.Yamasaki, Y.Murakami
  • Journal Title: Solid State Communications Volume: 185 Pages: 18-20
  • DOI: 10.1016/j.ssc.2014.01.019
  • Peer Reviewed
• [Journal Article] Ferroelectric control of a Mott insulator (2013)
  • Author(s): H. Yamada、M. Marinova, P. Altuntas, A. Crassous, L. Begon-Lours, S. Fusil, E. Jacquet, V. Garcia, K. Bouzehoudane, A. Gloter, J.E. Villegas, A. Barthelemy, M. Bibes
  • Journal Title: Scientific Reports Volume: 3 Issue: 1 Pages: 2834-2834
  • DOI: 10.1038/srep02834
  • Peer Reviewed
• [Journal Article] Resistive switching artificially induced in a dielectric/ferroelectric composite diode (2013)
  • Author(s): A. Tsurumaki-Fukuchi、H. Yamada、A. Sawa
  • Journal Title: Appl. Phys. Lett. Volume: 103 Issue: 15 Pages: 152903-152903
  • DOI: 10.1063/1.4824214
  • Peer Reviewed
• [Journal Article] Electrolyte-gated SmCoO3 thin-film transistors exhibiting thickness-dependent large switching ratio at room temperature (2013)
  • Author(s): P. -H. Xiang, S. Asanuma, H. Yamada, H. Sato, I. H. Inoue, H. Akoh, A. Sawa, M. Kawasaki, Y. Iwasa
  • Journal Title: Advanced Materials Volume: 25 Issue: 15 Pages: 2158-2161
  • DOI: 10.1002/adma.201204505
  • Peer Reviewed
• [Journal Article] Phase diagrams of strained Ca1-xCexMnO3 films (2012)
  • Author(s): P.-H. Xiang, H. Yamada, H. Akoh, and A. Sawa
  • Journal Title: Journal Applied Physics Volume: 112 Issue: 11 Pages: 113703-113703
  • DOI: 10.1063/1.4768198
  • Peer Reviewed
• [Presentation] 強誘電トンネル接合における抵抗スイッチング現象 (2014)
  • Author(s): 山田浩之
  • Organizer: 新世代研究所(ATI)・界面ナノ科学研究会
  • Place of Presentation: 愛知県蒲郡市
  • Year and Date: 2014-04-11
  • Invited
• [Presentation] 金属/BaTiO_3/酸化物トンネル接合における強誘電抵抗スイッチング (2014)
  • Author(s): 山田浩之、福地厚、豊崎喜精、石橋章司、澤彰仁、小林正起、中尾裕則、堀場弘司、組頭広志
  • Organizer: 応用物理学会
  • Place of Presentation: 青山学院大学(神奈川県相模原市)
  • Year and Date: 2014-03-19
• [Presentation] Resistive Switching in Ferroelectric Tunnel Junctions (2014)
  • Author(s): H. Yamada
  • Organizer: China-Japan-Korea workshop on RRAM and Functional Oxide Workship , Institute of Micro-Electronics, Chinese Academy of Science (CAS)
  • Place of Presentation: Beijing, China(invited)
  • Year and Date: 2014-01-16
• [Presentation] 金属/BaTiO3/酸化物トンネル接合における強誘電抵抗スイッチング (2014)
  • Author(s): 山田浩之、福地厚、豊崎喜精、石橋章司、澤彰仁、小林正起、中尾裕則、堀場弘司、組頭広志
  • Organizer: 応用物理学会
  • Place of Presentation: 青学大・神奈川県相模原市
• [Presentation] Resistive Switching in Ferroelectric Tunnel Junctions (2014)
  • Author(s): Hiroyuki Yamada
  • Organizer: China-Japan-Korea workship on RRAM and Functional Oxide Workshop
  • Place of Presentation: IME-CAS, 北京、中華人民共和国
  • Invited
• [Presentation] 強誘電トンネル接合における抵抗スイッチング現象 (2014)
  • Author(s): 山田 浩之
  • Organizer: 新世代研究所 界面ナノ科学研究会
  • Place of Presentation: 愛知県蒲郡市
  • Invited
• [Presentation] Pt/BaTiO_3/SrRuO_3強誘電トンネル接合の作製と評価 (2013)
  • Author(s): 山田浩之、福地厚、豊崎喜精、澤彰仁
  • Organizer: 応用物理学会
  • Place of Presentation: 同志社大学(京都府京田辺市)
  • Year and Date: 2013-09-19
• [Presentation] 擬正方晶BiFeO_3/CaMnO_3ヘテロ接合における強誘電電界効果 (2013)
  • Author(s): 山田浩之, P. Altuntas, A. Crassous, E. Jacquet, J.E. Villegas, K. Bouzehouane, M. Bibes, A. Barthélémy
  • Organizer: 応用物理学会
  • Place of Presentation: 神奈川工科大(神奈川県厚木市)
  • Year and Date: 2013-03-27
• [Presentation] Pt/ BaTiO3/SrRuO3強誘電トンネル接合の作製と評価 (2013)
  • Author(s): 山田 浩之、 福地 厚、 豊崎 喜精、 中尾 裕則、 澤 彰仁
  • Organizer: 応用物理学会
  • Place of Presentation: 同志社大・京都府
• [Presentation] Ferroelectric Field Effect in Supertetragonal BiFeO_3/CaMnO_3 Heterostructure (2012)
  • Author(s): H. Yamada, P. Altuntas, A. Crassous, E. Jacquet, J.E. Villegas, K. Bouzehouane, M. Bibes, A. Barthélémy、M. Marinova, A. Gloter, K. March, O. Stephan
  • Organizer: The 19^<th> international workshop on oxide electronics
  • Place of Presentation: Aperdoorn, the Netherlands
  • Year and Date: 2012-10-02
• [Presentation] Ferroelectric Tunnel Junction Based on Supertetragonal BiFeO_3 (2012)
  • Author(s): H. Yamada, V. Garcia, S. Fusil, E. Jacquet, K. Bouzehouane, M. Bibes, A. Barthélémy
  • Organizer: The 19^<th> international workshop on oxide electronics
  • Place of Presentation: Aperdoorn, the Netherlands
  • Year and Date: 2012-10-01
• [Presentation] Impacts of changing in interfacial band structures on ferroelectric resistive switching effect at Schottky-like BiFeO_3 interfaces (2012)
  • Author(s): A. Tsurumaki-Fukuchi, H. Yamada, A. Sawa
  • Organizer: The 19^<th> international workshop on oxide electronics
  • Place of Presentation: Aperdoorn, the Netherlands
  • Year and Date: 2012-10-01
• [Presentation] BiFeO_3薄膜を用いた強誘電抵抗変化メモリの動作特性 (2012)
  • Author(s): 福地厚、山田浩之、澤彰仁
  • Organizer: 応用物理学会
  • Place of Presentation: 愛媛大(愛媛県松山市)
  • Year and Date: 2012-09-12
• [Presentation] 擬正方晶BiFeO_3/Ca_<1-x>Ce_xMnO_3/ /YAlO_3ヘテロ接合の作製とその不揮発デバイス機能 (2012)
  • Author(s): H. Yamada, V. Garcia, S.Fusil, E. Jacquet, K. Bouzehouane, M. Bibes , A. Barthélémy
  • Organizer: 応用物理学会
  • Place of Presentation: 愛媛大(愛媛県松山市)
  • Year and Date: 2012-09-11
• [Presentation] BiFeO3強誘電抵抗変化メモリにおける界面電子構造に基づいた動作特性の制御 (2012)
  • Author(s): 福地厚、山田浩之、澤彰仁
  • Organizer: 応用物理学会
  • Place of Presentation: 神奈川工科大(神奈川県厚木市)
  • Year and Date: 2012-03-27
• [Presentation] 擬正方晶 BiFeO3/CaMnO3 ヘテロ接合における強誘電電界効果
  • Author(s): 山田 浩之
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学
• [Presentation] Ferroelectric Field Effect in in Supertetragonal BiFeO3/CaMnO3 Heterostructure
  • Author(s): Hiroyuki Yamada
  • Organizer: The 19th international workshop on oxide electronics
  • Place of Presentation: Palace het Loo, Apeldoorn, the Netherlands
• [Presentation] Ferroelectric Tunnel Junction Based on “Supertetragonal” BiFeO3
  • Author(s): Hiroyuki Yamada
  • Organizer: The 19th international workshop on oxide electronics
  • Place of Presentation: Palace het Loo, Apeldoorn, the Netherlands
• [Presentation] 擬正方晶BiFeO3/Ca1-xCexMnO3/ /YAlO3 ヘテロ接合の作製とその不揮発デバイス機能
  • Author(s): 山田 浩之
  • Organizer: 第７３回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] Impacts of changing in interfacial band structures on ferroelectric resistive switching effect at Schottky-like BiFeO3 interfaces
  • Author(s): Atsushi Fukuchi
  • Organizer: The 19th international workshop on oxide electronics
  • Place of Presentation: Palace het Loo, Apeldoorn, the Netherlands
• [Presentation] BiFeO3薄膜を用いた強誘電抵抗変化メモリの動作特性
  • Author(s): 福地 厚
  • Organizer: 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学
• [Presentation] BiFeO3強誘電抵抗変化メモリにおける界面電子構造に基づいた動作特性の制御
  • Author(s): 福地 厚
  • Organizer: 第60回応用物理学会春季学術講演会
  • Place of Presentation: 神奈川工科大学