| Budget Amount *help |
¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥1,820,000 (Direct Cost: ¥1,400,000、Indirect Cost: ¥420,000)
Fiscal Year 2012: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
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| Research Abstract |
We developed non-volatile device functionalities by combining ferroelectricity with Mott transition, which occurs in correlated-electron oxides by novel mechanisms that cannot be expected in conventional semiconductors. Particularly, we found a nonvolatile resistive switching in a transistor structure consisting of a novel correlated oxide with a Mott transition and a newly-found ferroelectric. The observed switching (ferroelectric field effect) was the largest among this compound family. We revealed the mechanism by focusing on an interface atomic structure between the correlated oxide and ferroelectric.
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