Irradiation creep and the underlying mechanisms of ion-irradiated SiC
Project/Area Number |
24760715
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Research Category |
Grant-in-Aid for Young Scientists (B)
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Allocation Type | Multi-year Fund |
Research Field |
Nuclear engineering
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Research Institution | Kyoto University |
Principal Investigator |
KONDO Souske 京都大学, エネルギー理工学研究所, 特定助教 (10563984)
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Project Period (FY) |
2012-04-01 – 2014-03-31
|
Project Status |
Completed (Fiscal Year 2013)
|
Budget Amount *help |
¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2013: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000)
Fiscal Year 2012: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
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Keywords | 炭化ケイ素 / 照射クリープ / スウェリング / 照射損傷 / シリコンカーバイド / 電子顕微鏡 |
Research Abstract |
Irradiation creep in SiC was studied by an ion-irradiation under various conditions. The tensioned surfaces of bent thin samples were irradiated with Si ions up to 3 dpa at 553K-1473K, which is referred to as a single-ion test. Additional He ions were irradiated simultaneously in the dual-ion test to study the effects of transmuted He on irradiation creep. Irradiation creep was found at >673K in the single-ion case, where a linear relationship between irradiation creep and swelling (C/S) was observed at 673-1073K for all stress levels. The proportional constant of the C/S relationship was strongly dependent on temperature and stress. On the basis of the TEM study, anisotropic distribution of SIA clusters was suspected to be the primary creep mechanism. For the dual-ion cases, irradiation creep was very limited at temperatures of 673-1073K. TEM study indicated that helium inhibited the stable growth of SIA clusters and prevented them from exhibiting anisotropic distribution.
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Report
(3 results)
Research Products
(7 results)