Development of extremely flexible and transparent carbon nanotube devices

• Project/Area Number: 24860018
• Research Category: Grant-in-Aid for Research Activity Start-up
• Allocation Type: Single-year Grants
• Research Field: Thermal engineering
• Research Institution: National Institute for Materials Science
• Principal Investigator: AIKAWA SHINYA 独立行政法人物質・材料研究機構, 国際ナノアーキテクトニクス研究拠点, ポスドク研究員 (40637899)
• Project Period (FY): 2012-08-31 – 2014-03-31
• Project Status: Completed (Fiscal Year 2013)
• Budget Amount: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2013: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000); Fiscal Year 2012: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
• Keywords: カーボンナノチューブ / フレキシブルエレクトロニクス / ポリマー絶縁膜 / 透明導電膜 / プラスチック基板

Research Abstract

A carbon-nanotube field-effect transistor (CNT-FET) generally shows p-type conduction, however, it can be converted to ambipolar or unipolar n-type behavior by polymer coating even under an ambient condition. In this study, carrier-type conversion of CNT-FETs using a water-soluble poly-vinyl alcohol (PVA) was demonstrated. Based on the capacitance-voltage characteristics, it is found that the PVA film has positive charges in high density. The conversion is possibly due to the existence of the induced charges, which was formed at the CNT/PVA interfaces by the polymer coating.

Research Products

• [Journal Article] Strong Enhancement of Raman Scattering from a Bulk-Inactive Vibrational Mode in Few-Layer MoTe_2 (2014)
  • Author(s): M. Yamamoto, S. T. Wang, M. Ni, Y.-F. Lin, S.-L. Li, S. Aikawa, W.-B. Jian, K. Ueno, K. Wakabayashi, K. Tsukagoshi
  • Journal Title: ACS Nano Volume: vol.8 Issue: 4 Pages: 3895-3903
  • DOI: 10.1021/nn5007607
  • Peer Reviewed
• [Journal Article] Low-temperature processable amorphous In-W-O thin-film transistors with high mobility and stability (2014)
  • Author(s): T. Kizu, S. Aikawa, N. Mitoma, M. Shimizu, X. Gao, M.-F. Lin, T. Nabatame, K Tsukagoshi
  • Journal Title: Appl. Phys. Lett Volume: vol.104 Issue: 15 Pages: 152103-152103
  • DOI: 10.1063/1.4871511
  • Peer Reviewed
• [Journal Article] Stable amorphous In_2O_3-based thin-film transistors by incorporating SiO_2 to suppress oxygen vacancies (2014)
  • Author(s): N. Mitoma, S. Aikawa, X. Gao, T. Kizu, M. Shimizu, M.-F. Lin, T. Nabatame, K. Tsukagoshi
  • Journal Title: Appl. Phys. Lett Volume: vol.104 Issue: 10 Pages: 102103-102103
  • DOI: 10.1063/1.4868303
  • Peer Reviewed
• [Journal Article] Effects of dopants in InO_x-based amorphous oxide semiconductors for thin-film transistor applications (2013)
  • Author(s): S. Aikawa, T. Nabatame, K. Tsukagoshi
  • Journal Title: Appl. Phys. Lett Volume: vol.103 Issue: 17 Pages: 172105-172105
  • DOI: 10.1063/1.4822175
  • Peer Reviewed
• [Journal Article] Effect of Gas Pressure on the Density of Horizontally Aligned Single-Walled Carbon Nanotubes Grown on Quartz Substrates (2013)
  • Author(s): T. Inoue, D. Hasegawa, S. Badar, S. Aikawa, S. Chiashi, S. Maruyama
  • Journal Title: Journal of Physical Chemistry C Volume: 117 Issue: 22 Pages: 11804-11810
  • DOI: 10.1021/jp401681e
  • Peer Reviewed
• [Journal Article] Thin-film transistors fabricated by low-temperature process based on Ga- and Zn-free amorphous oxide semiconductor (2013)
  • Author(s): S. Aikawa, P. Darmawan, K. Yanagisawa, T. Nabatame, Y. Abe, K. Tsukagoshi
  • Journal Title: Appl. Phys. Lett Volume: vol.102 Issue: 10 Pages: 102101-102101
  • DOI: 10.1063/1.4794903
  • Peer Reviewed
• [Journal Article] Effect of Inrush Current on Carbon Nanotube Synthesis from Xylene by Liquid-Phase Pulsed Arc Method Using Copper Electrodes (2013)
  • Author(s): T. Kizu, S. Aikawa, K. Takekoshi, E. Nishikawa
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 11 Issue: 0 Pages: 8-12
  • DOI: 10.1380/ejssnt.2013.8
  • NAID: 130004438846
  • ISSN: 1348-0391
  • Peer Reviewed
• [Journal Article] Influence of Pulse Condition in the Synthesis of Carbon Nanotubes Containing Tungsten by Arc Discharge in Water (2012)
  • Author(s): K. Takekoshi, T. Kizu, S. Aikawa, M. Kanda, E. Nishikawa
  • Journal Title: Jpn. J. Appl. Phys Volume: vol.51 Issue: 12R Pages: 125102-125102
  • DOI: 10.1143/jjap.51.125102
  • NAID: 40019527655
  • Peer Reviewed
• [Journal Article] Temperature dependent thermal conductivity increase of aqueous nanofluid with single walled carbon nanotube inclusions (2012)
  • Author(s): S. Harish, K. Ishikawa, E. Einarsson, S. Aikawa, T. Inoue, P. Zhao, M. Watanabe, S. Chiashi, J. Shiomi, S. Maruyama
  • Journal Title: Materials Express Volume: 2 Issue: 3 Pages: 213-223
  • DOI: 10.1166/mex.2012.1074
  • Peer Reviewed
• [Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性 (2014)
  • Author(s): 栗島一徳,生田目俊秀,清水麻希,相川慎也,塚越一仁,大井暁彦,知京豊裕,小椋厚志
  • Organizer: 2014年第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学,神奈川
  • Year and Date: 2014-03-19
• [Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性の変化 (2014)
  • Author(s): 栗島一徳,生田目俊秀,清水麻希,相川慎也,塚越一仁,大井暁彦,知京豊裕,小椋厚志
  • Organizer: 第19回ゲートスタック研究会
  • Place of Presentation: ニューウェルシティー湯河原,静岡
  • Year and Date: 2014-01-24
• [Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性の変化 (2014)
  • Author(s): 栗島一徳，生田目俊秀，清水麻希，相川慎也，塚越一仁，大井暁彦，知京豊裕，小椋厚志
  • Organizer: 第19回 ゲートスタック研究会
  • Place of Presentation: ニューウェルシティー湯河原（静岡）
• [Presentation] PE-ALD法で作製したAl2O3絶縁膜を用いたIGZO-TFTの電気特性 (2014)
  • Author(s): 栗島一徳，生田目俊秀，清水麻希，相川慎也，塚越一仁，大井暁彦，知京豊裕，小椋厚志
  • Organizer: 2014年春季 応用物理学会
  • Place of Presentation: 青山学院大学（神奈川）
• [Presentation] Influence of Al2O3 Gate Dielectric on Transistor Properties for Igzo Thin Film Transistor (2014)
  • Author(s): K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyow, A. Ogura
  • Organizer: 225th ECS Meeting
  • Place of Presentation: Hilton Bonnet Creek (Orlando, Florida, USA)
• [Presentation] Influence of electrical properties for IGZO TFT with Al2O3 gate insulators by PE-ALD method (2014)
  • Author(s): K. Kurishima, T. Nabatame, M. Shimizu, S. Aikawa, K. Tsukagoshi, A. Ohi, T. Chikyo, A. Ogura
  • Organizer: 14th International Conference on Atomic Layer Deposition 2014
  • Place of Presentation: Hotel Granvia Kyoto (Kyoto, Japan)
• [Presentation] Highly Stable n-Doped Graphene Field-Effect Transistors via Polyvinyl Alcohol Films (2013)
  • Author(s): S.J. Kim, T. Thurakitseree, S. Aikawa, T. Inoue, S. Chiashi, S. Maruyama
  • Organizer: 5th International Conferences on Recent Progress in Graphene Research
  • Place of Presentation: Tokyo, Japan
  • Year and Date: 2013-09-12
• [Presentation] Transport characteristics for nitrogen-doped horizontally aligned single-walled carbon nanotubes (2013)
  • Author(s): S.J. Kim, T. Thurakitseree, S. Aikawa, T. Inoue, S. Chiashi, S. Maruyama
  • Organizer: 4th A3 Symposium on Emerging Materials : Nanomaterials for Energy and Electronics
  • Place of Presentation: Jeju Island, Korea
• [Presentation] Highly Stable n-Doped Graphene Field-Effect Transistors via Polyvinyl Alcohol Films (2013)
  • Author(s): S.J. Kim, P. Zhao, S. Aikawa, E. Einarsson, S. Chiashi, S. Maruyama
  • Organizer: 5th International Conferences on Recent Progress in Graphene Research
  • Place of Presentation: Tokyo Institute of Technology (Tokyo, Japan)
• [Presentation] Transport characteristics for nitrogen-doped horizontally aligned single-walled carbon nanotubes (2013)
  • Author(s): S.J. Kim, T. Thurakitseree, S. Aikawa, T. Inoue, S. Chiashi, S. Maruyama
  • Organizer: 4th A3 Symposium on Emerging Materials: Nanomaterials for Energy and Electronics
  • Place of Presentation: Daemyung Resort (Jeju Island, Korea)
• [Presentation] Single-walled Carbon Nanotube/Silicon Heterojunction Photovoltaic Cell (2012)
  • Author(s): K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, S. Aikawa, S. Chiashi, S. Maruyama
  • Organizer: 2012 MRS Fall Meeting
  • Place of Presentation: Boston, Massachusetts, USA
  • Year and Date: 2012-11-29
• [Presentation] Fabrication of Flexible Graphene Field-Effect Transistors with Single-Walled Carbon Nanotube Electrodes (2012)
  • Author(s): S.J. Kim, S. Aikawa, P. Zhao, B. Hou, E. Einarsson, S. Chiashi, S. Maruyama
  • Organizer: 2012 MRS Fall Meeting
  • Place of Presentation: Boston, Massachusetts, USA
  • Year and Date: 2012-11-29
• [Presentation] Influence of Polymer Coating on Device Properties of Carbon Nanotube Field-Effect Transistors (2012)
  • Author(s): S. Aikawa, T. Inoue, E. Einarsson, S. Chiashi, S. Maruyama
  • Organizer: 2012 International Conference on Solid State Devices and Materials
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2012-09-26
• [Presentation] Optimization of Single-Walled Carbon Nanotube/Silicon Heterojunction Solar Cells (2012)
  • Author(s): K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, T. Inoue, S. Aiwaka, S. Chiashi, S. Maruyama
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学,愛媛
  • Year and Date: 2012-09-12
• [Presentation] 水中アーク放電を用いた金属内包カーボンナノチューブ合成における陰極金属の沸点の影響 (2012)
  • Author(s): 竹腰健太郎,木津たきお,相川慎也,西川英一
  • Organizer: 2012年秋季第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学,愛媛
  • Year and Date: 2012-09-11
• [Presentation] Optimization of Single-Walled Carbon Nanotube/Silicon Heterojunction Solar Cells (2012)
  • Author(s): K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, T. Inoue, S. Aiwaka, S. Chiashi, S. Maruyama
  • Organizer: 2012年秋季 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学（愛媛）
• [Presentation] 水中アーク放電を用いた金属内包カーボンナノチューブ合成における陰極金属の沸点の影響 (2012)
  • Author(s): 竹腰 健太郎，木津 たきお，相川 慎也，西川 英一
  • Organizer: 2012年秋季 第73回応用物理学会学術講演会
  • Place of Presentation: 愛媛大学・松山大学（愛媛）
• [Presentation] Influence of Polymer Coating on Device Properties of Carbon Nanotube Field-Effect Transistors (2012)
  • Author(s): S. Aikawa, T. Inoue, E. Einarsson, S. Chiashi, S. Maruyama
  • Organizer: 2012 International Conference on Solid State Devices and Materials
  • Place of Presentation: Kyoto International Conference Center (Kyoto, Japan)
• [Presentation] Fabrication of Flexible Graphene Field-Effect Transistors with Single-Walled Carbon Nanotube Electrodes (2012)
  • Author(s): S.J. Kim, S. Aikawa, P. Zhao, B. Hou, E. Einarsson, S. Chiashi, S. Maruyama
  • Organizer: 2012 MRS Fall Meeting
  • Place of Presentation: Hynes Convention Center (Boston, Massachusetts, USA)
• [Presentation] Single-walled Carbon Nanotube/Silicon Heterojunction Photovoltaic Cell (2012)
  • Author(s): K. Cui, S. Omiya, P. Zhao, T. Thurakitseree, S. Aikawa, S. Chiashi, S. Maruyama
  • Organizer: 2012 MRS Fall Meeting
  • Place of Presentation: Hynes Convention Center (Boston, Massachusetts, USA)
• [Book] 超フレキシブルで透明なカーボンナノチューブトランジスタO plus E (vol.35) (2013)
  • Author(s): 相川慎也,塚越一仁,丸山茂夫
  • Publisher: アドコム・メディア株式会社
• [Book] O Plus E (2013)
  • Author(s): 相川 慎也，塚越 一仁，丸山 茂夫
  • Publisher: アドコム・メディア株式会社
• [Remarks]
  • URL: http://www.nims.go.jp/pi-ele_g/member/aikawa.html
• [Remarks] 研究室ホームページ
  • URL: http://www.nims.go.jp/pi-ele_g/member/aikawa.html
• [Remarks] webページのURL
  • URL: http://www.nims.go.jp/pi-ele_g/member/aikawa.html
• [Patent(Industrial Property Rights)] 有機EL素子及びその製造方法 (2014)
  • Inventor(s): 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Holder: 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Type: 特許
  • Filing Date: 2014-03-28
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタ,薄膜トランジスタの製造方法および半導体装置 (2014)
  • Inventor(s): 生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
  • Industrial Property Rights Holder: 生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016635
  • Filing Date: 2014-01-31
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2014)
  • Inventor(s): 相川 慎也,塚越 一仁,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
  • Industrial Property Rights Holder: 相川 慎也,塚越 一仁,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016634
  • Filing Date: 2014-01-31
  • Overseas
• [Patent(Industrial Property Rights)] 固定電荷を内部に誘起したゲート絶縁膜 (2014)
  • Inventor(s): 生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
  • Industrial Property Rights Holder: 生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016633
  • Filing Date: 2014-01-31
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタの構造,薄膜トランジスタの製造方法および半導体装置 (2014)
  • Inventor(s): 生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
  • Industrial Property Rights Holder: 生田目 俊秀,相川 慎也,木津 たきお,清水 麻希,三苫 伸彦,塚越 一仁
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016632
  • Filing Date: 2014-01-31
  • Overseas
• [Patent(Industrial Property Rights)] 酸化物半導体およびその製法 (2014)
  • Inventor(s): 相川 慎也,塚越 一仁,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
  • Industrial Property Rights Holder: 相川 慎也,塚越 一仁,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016631
  • Filing Date: 2014-01-31
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2014)
  • Inventor(s): 塚越 一仁,相川 慎也,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
  • Industrial Property Rights Holder: 塚越 一仁,相川 慎也,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016273
  • Filing Date: 2014-01-31
  • Overseas
• [Patent(Industrial Property Rights)] 酸化物薄膜トランジスタおよびその製造方法 (2014)
  • Inventor(s): 塚越 一仁,相川 慎也,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
  • Industrial Property Rights Holder: 塚越 一仁,相川 慎也,木津 たきお, 清水 麻希,三苫 伸彦,生田目 俊秀
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016630
  • Filing Date: 2014-01-31
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2014)
  • Inventor(s): 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Holder: 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016266
  • Filing Date: 2014-01-31
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2014)
  • Inventor(s): 生田目俊秀，塚越一仁，相川慎也
  • Industrial Property Rights Holder: 生田目俊秀，塚越一仁，相川慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016266
  • Filing Date: 2014-01-31
• [Patent(Industrial Property Rights)] 酸化物薄膜トランジスタおよびその製造方法 (2014)
  • Inventor(s): 塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
  • Industrial Property Rights Holder: 塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016630
  • Filing Date: 2014-01-31
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2014)
  • Inventor(s): 塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
  • Industrial Property Rights Holder: 塚越一仁，相川慎也，木津たきお，清水麻希，三苫伸彦，生田目俊秀
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016273
  • Filing Date: 2014-01-31
• [Patent(Industrial Property Rights)] 酸化物半導体およびその製法 (2014)
  • Inventor(s): 相川慎也，塚越一仁，木津たきお，清水麻希，三苫伸彦，生田目俊秀
  • Industrial Property Rights Holder: 相川慎也，塚越一仁，木津たきお，清水麻希，三苫伸彦，生田目俊秀
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016631
  • Filing Date: 2014-01-31
• [Patent(Industrial Property Rights)] 薄膜トランジスタの構造、薄膜トランジスタの製造方法および半導体装置 (2014)
  • Inventor(s): 生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
  • Industrial Property Rights Holder: 生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016632
  • Filing Date: 2014-01-31
• [Patent(Industrial Property Rights)] 固定電荷を内部に誘起したゲート絶縁膜 (2014)
  • Inventor(s): 生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
  • Industrial Property Rights Holder: 生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016633
  • Filing Date: 2014-01-31
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2014)
  • Inventor(s): 相川慎也，塚越一仁，木津たきお，清水麻希，三苫伸彦，生田目俊秀
  • Industrial Property Rights Holder: 相川慎也，塚越一仁，木津たきお，清水麻希，三苫伸彦，生田目俊秀
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016634
  • Filing Date: 2014-01-31
• [Patent(Industrial Property Rights)] 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置 (2014)
  • Inventor(s): 生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
  • Industrial Property Rights Holder: 生田目俊秀，相川慎也，木津たきお，清水麻希，三苫伸彦，塚越一仁
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-016635
  • Filing Date: 2014-01-31
• [Patent(Industrial Property Rights)] 有機ＥＬ素子及びその製造方法 (2014)
  • Inventor(s): 生田目俊秀，塚越一仁，相川慎也
  • Industrial Property Rights Holder: 生田目俊秀，塚越一仁，相川慎也
  • Industrial Property Rights Type: 特許
  • Filing Date: 2014-03-28
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2013)
  • Inventor(s): 生田目 俊秀,塚越 一仁,相川 慎也, 知京 豊裕
  • Industrial Property Rights Holder: 生田目 俊秀,塚越 一仁,相川 慎也, 知京 豊裕
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-139425
  • Filing Date: 2013-07-03
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタ,薄膜トランジスタの製造方法および半導体装置 (2013)
  • Inventor(s): 塚越 一仁,ピーター ダルマワン, 相川 慎也,生田目 俊秀,柳沢 佳一
  • Industrial Property Rights Holder: 塚越 一仁,ピーター ダルマワン, 相川 慎也,生田目 俊秀,柳沢 佳一
  • Industrial Property Rights Type: 特許
  • Filing Date: 2013-06-13
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2013)
  • Inventor(s): 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Holder: 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-099284
  • Filing Date: 2013-05-09
  • Overseas
• [Patent(Industrial Property Rights)] 有機EL素子及びその製造方法 (2013)
  • Inventor(s): 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Holder: 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-068164
  • Filing Date: 2013-03-28
  • Overseas
• [Patent(Industrial Property Rights)] 有機EL素子及びその製造方法 (2013)
  • Inventor(s): 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Holder: 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-067801
  • Filing Date: 2013-03-28
  • Overseas
• [Patent(Industrial Property Rights)] 有機EL素子 (2013)
  • Inventor(s): 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Holder: 生田目 俊秀,塚越 一仁,相川 慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-067782
  • Filing Date: 2013-03-28
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2013)
  • Inventor(s): 生田目俊秀，塚越一仁，相川慎也
  • Industrial Property Rights Holder: 生田目俊秀，塚越一仁，相川慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-099284
  • Filing Date: 2013-05-09
• [Patent(Industrial Property Rights)] 薄膜トランジスタ、薄膜トランジスタの製造方法および半導体装置 (2013)
  • Inventor(s): 塚越一仁，ピーターダルマワン，相川慎也，生田目俊秀，柳沢佳一
  • Industrial Property Rights Holder: 塚越一仁，ピーターダルマワン，相川慎也，生田目俊秀，柳沢佳一
  • Industrial Property Rights Type: 特許
  • Filing Date: 2013-06-13
  • Overseas
• [Patent(Industrial Property Rights)] 薄膜トランジスタおよびその製造方法 (2013)
  • Inventor(s): 生田目俊秀，塚越一仁，相川慎也，知京豊裕
  • Industrial Property Rights Holder: 生田目俊秀，塚越一仁，相川慎也，知京豊裕
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-139425
  • Filing Date: 2013-07-03
• [Patent(Industrial Property Rights)] 有機ＥＬ素子 (2013)
  • Inventor(s): 生田目 俊秀，塚越 一仁，相川 慎也
  • Industrial Property Rights Holder: 生田目 俊秀，塚越 一仁，相川 慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-067782
  • Filing Date: 2013-03-28
• [Patent(Industrial Property Rights)] 有機ＥＬ素子及びその製造方法 (2013)
  • Inventor(s): 生田目 俊秀，塚越 一仁，相川 慎也
  • Industrial Property Rights Holder: 生田目 俊秀，塚越 一仁，相川 慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-067801
  • Filing Date: 2013-03-28
• [Patent(Industrial Property Rights)] 有機ＥＬ素子及びその製造方法 (2013)
  • Inventor(s): 生田目 俊秀，塚越 一仁，相川 慎也
  • Industrial Property Rights Holder: 生田目 俊秀，塚越 一仁，相川 慎也
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-068164
  • Filing Date: 2013-03-28