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SiC表面・界面で生じる固有な現象の正しい理解とそれに基づくMOS界面特性の制御
Research Project
All
Fiscal Year 2024
grantAwardInfo
Project/Area Number
24H00308
Research Category
Grant-in-Aid for Scientific Research (A)
Allocation Type
Single-year Grants
Section
一般
Review Section
Medium-sized Section 21:Electrical and electronic engineering and related fields
Research Institution
The University of Tokyo
Principal Investigator
喜多 浩之
東京大学, 大学院新領域創成科学研究科, 教授 (00343145)
Project Period (FY)
2024-04-01 – 2027-03-31
Project Status
Adopted (Fiscal Year 2024)
Budget Amount
*help
¥49,270,000 (Direct Cost: ¥37,900,000、Indirect Cost: ¥11,370,000)
Fiscal Year 2024: ¥30,940,000 (Direct Cost: ¥23,800,000、Indirect Cost: ¥7,140,000)