Oxygen vacancy engineering on indium oxide vertical FETs for 3D power scaling

• Project/Area Number: 24K17328
• Research Category: Grant-in-Aid for Early-Career Scientists
• Allocation Type: Multi-year Fund
• Review Section: Basic Section 21060:Electron device and electronic equipment-related
• Research Institution: National Institute of Advanced Industrial Science and Technology
• Principal Investigator: CHEN CHIAーTSONG 国立研究開発法人産業技術総合研究所, エレクトロニクス・製造領域, 研究員 (50982120)
• Project Period (FY): 2024-04-01 – 2026-03-31
• Project Status: Granted (Fiscal Year 2024)
• Budget Amount: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2025: ¥2,080,000 (Direct Cost: ¥1,600,000、Indirect Cost: ¥480,000); Fiscal Year 2024: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
• Keywords: 酸化膜半導体 / 酸素空孔 / アニーリング / 表面パッシベーション

Outline of Research at the Start

InOx-based oxide semiconductor materials are very promising for wide-range of electronic applications, especially on panel and transistor devices for advanced smartphone. To realize the high-performance InOx-based devices, the intrinsic properties of oxide thin-film should be well-controlled. In this research, the strategies of surface passivation and annealing for realizing high-performance and stable oxide thin-film are investigated.