Resonant tunneling diode Terahertz oscillator with superlattice heterostructure for high output power

Research Project

Project/Area Number	24K17329
Research Category	Grant-in-Aid for Early-Career Scientists
Allocation Type	Multi-year Fund
Review Section	Basic Section 21060:Electron device and electronic equipment-related
Research Institution	National Institute of Information and Communications Technology
Principal Investigator	Cito Michele 国立研究開発法人情報通信研究機構, 未来ICT研究所小金井フロンティア研究センター, 研究員 (40991336)
Project Period (FY)	2024-04-01 – 2026-03-31
Project Status	Granted (Fiscal Year 2024)
Budget Amount *help	¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000) Fiscal Year 2025: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000) Fiscal Year 2024: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000)
Keywords	Resonant tunneling diode / Terahertz / Electronic devices / high-frequency / Semiconductors
Outline of Research at the Start	The project aims to explore non-conventional device designs to improve the maximum output power of resonant tunneling diodes. This will enable the realization of high-output power, high-frequency electronic devices for next-generation wireless communication (beyond 5G-6G).