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Flash epitaxy of single-crystal 2D materials by geometric confinement

Research Project

Project/Area Number 24K21233
Research Category

Grant-in-Aid for Challenging Research (Pioneering)

Allocation TypeMulti-year Fund
Review Section Medium-sized Section 28:Nano/micro science and related fields
Research InstitutionThe University of Tokyo

Principal Investigator

トン ヴィンセント  東京大学, 大学院工学系研究科(工学部), 教授 (50971628)

Co-Investigator(Kenkyū-buntansha) 何 亜倫  国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主任研究員 (20815386)
Project Period (FY) 2024-06-28 – 2027-03-31
Project Status Granted (Fiscal Year 2024)
Budget Amount *help
¥26,000,000 (Direct Cost: ¥20,000,000、Indirect Cost: ¥6,000,000)
Fiscal Year 2026: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2025: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000)
Fiscal Year 2024: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
KeywordsFlash epitaxy / single-crystallinity / 2D semiconductors
Outline of Research at the Start

Our proposal offers a groundbreaking solution: a photonically-assisted, geometrically-confined-growth technique. We are confident that this approach can unlock the latent potential of 2D materials, elevating them to commercial viability.

Report

(1 results)
  • 2024 Comments on the Screening Results

URL: 

Published: 2024-07-03   Modified: 2024-09-18  

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