Flash epitaxy of single-crystal 2D materials by geometric confinement

• Project/Area Number: 24K21233
• Research Category: Grant-in-Aid for Challenging Research (Pioneering)
• Allocation Type: Multi-year Fund
• Review Section: Medium-sized Section 28:Nano/micro science and related fields
• Research Institution: The University of Tokyo
• Principal Investigator: トン ヴィンセント 東京大学, 大学院工学系研究科(工学部), 教授 (50971628)
• Co-Investigator(Kenkyū-buntansha): 何 亜倫 国立研究開発法人物質・材料研究機構, 電子・光機能材料研究センター, 主任研究員 (20815386)
• Project Period (FY): 2024-06-28 – 2027-03-31
• Project Status: Granted (Fiscal Year 2024)
• Budget Amount: ¥26,000,000 (Direct Cost: ¥20,000,000、Indirect Cost: ¥6,000,000); Fiscal Year 2026: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000); Fiscal Year 2025: ¥8,970,000 (Direct Cost: ¥6,900,000、Indirect Cost: ¥2,070,000); Fiscal Year 2024: ¥10,530,000 (Direct Cost: ¥8,100,000、Indirect Cost: ¥2,430,000)
• Keywords: Flash epitaxy / single-crystallinity / 2D semiconductors

Outline of Research at the Start

Our proposal offers a groundbreaking solution: a photonically-assisted, geometrically-confined-growth technique. We are confident that this approach can unlock the latent potential of 2D materials, elevating them to commercial viability.