| Project/Area Number |
24KF0104
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Multi-year Fund |
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| Section | 外国 |
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| Review Section |
Basic Section 29010:Applied physical properties-related
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| Research Institution | The University of Tokyo |
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Principal Investigator |
中辻 知 東京大学, 大学院理学系研究科(理学部), 教授 (70362431)
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| Co-Investigator(Kenkyū-buntansha) |
CHEN WAN-HSIN 東京大学, 大学院理学系研究科(理学部), 外国人特別研究員
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| Project Period (FY) |
2024-07-26 – 2026-03-31
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| Project Status |
Granted (Fiscal Year 2024)
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| Budget Amount *help |
¥2,300,000 (Direct Cost: ¥2,300,000)
Fiscal Year 2025: ¥900,000 (Direct Cost: ¥900,000)
Fiscal Year 2024: ¥1,400,000 (Direct Cost: ¥1,400,000)
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| Outline of Research at the Start |
We aim to observe a large tunnel magnetoresistance (TMR) in magnetic tunnel junctions (MTJs) based on the topological antiferromagnet Mn3Sn, towards the realization of ultra-fast, low-power, non-volatile magnetoresistive memory. To achieve this, we will optimize the growth conditions for the magnetic electrode layers and barrier layers.
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