| Project/Area Number |
24KF0255
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| Research Category |
Grant-in-Aid for JSPS Fellows
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| Allocation Type | Multi-year Fund |
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| Section | 外国 |
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| Review Section |
Basic Section 18020:Manufacturing and production engineering-related
|
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| Research Institution | Keio University |
|---|
Principal Investigator |
閻 紀旺 慶應義塾大学, 理工学部(矢上), 教授 (40323042)
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| Co-Investigator(Kenkyū-buntansha) |
HUANG WEIHAI 慶應義塾大学, 理工学部(矢上), 外国人特別研究員
|
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| Project Period (FY) |
2024-11-15 – 2027-03-31
|
| Project Status |
Granted (Fiscal Year 2024)
|
| Budget Amount *help |
¥2,000,000 (Direct Cost: ¥2,000,000)
Fiscal Year 2026: ¥500,000 (Direct Cost: ¥500,000)
Fiscal Year 2025: ¥1,000,000 (Direct Cost: ¥1,000,000)
Fiscal Year 2024: ¥500,000 (Direct Cost: ¥500,000)
|
|---|
| Outline of Research at the Start |
GaN is the third-generation semiconductor used in power devices and also has excellent optical properties. This research will elaborate parameters influencing the machining characteristics of GaN during nanoindentation, nanoscale scratching and diamond turning processes.
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