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Next Generation Free-Standing Thin Film Solid-State Battery for Bioelectronics Devices

Research Project

Project/Area Number 24KF0271
Research Category

Grant-in-Aid for JSPS Fellows

Allocation TypeMulti-year Fund
Section外国
Review Section Basic Section 26020:Inorganic materials and properties-related
Research InstitutionNational Institute for Materials Science

Principal Investigator

桑田 直明  国立研究開発法人物質・材料研究機構, エネルギー・環境材料研究センター, グループリーダー (00396459)

Co-Investigator(Kenkyū-buntansha) SHARMA PRINCE  国立研究開発法人物質・材料研究機構, エネルギー・環境材料研究センター, 外国人特別研究員
Project Period (FY) 2024-11-15 – 2027-03-31
Project Status Granted (Fiscal Year 2024)
Budget Amount *help
¥2,200,000 (Direct Cost: ¥2,200,000)
Fiscal Year 2026: ¥700,000 (Direct Cost: ¥700,000)
Fiscal Year 2025: ¥1,400,000 (Direct Cost: ¥1,400,000)
Fiscal Year 2024: ¥100,000 (Direct Cost: ¥100,000)
Outline of Research at the Start

This research aims to develop a next-generation thin-film SSB for wearable bioelectronics, where a flexible LiCoO2 cathode will be fabricated via wet etching. The cathode is investigated for diffusion studies followed by development of novel SSB to provide insights for advancing bioelectronics.

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Published: 2024-11-22   Modified: 2025-03-21  

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