Development of high performance large size x-ray video camera using CdTe layers grown on Si substrates

• Project/Area Number: 25242048
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Medical systems
• Research Institution: Nagoya Institute of Technology
• Principal Investigator: Yasuda Kazuhito 名古屋工業大学, 工学(系)研究科(研究院), 教授 (60182333)
• Co-Investigator(Kenkyū-buntansha): NIRAULA Madan 名古屋工業大学, 大学院工学研究科, 准教授 (20345945)
• Co-Investigator(Renkei-kenkyūsha): SUZUKI Kazuhiko 北海道科学大学, 工学部, 教授 (30226500)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥29,770,000 (Direct Cost: ¥22,900,000、Indirect Cost: ¥6,870,000); Fiscal Year 2015: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000); Fiscal Year 2014: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000); Fiscal Year 2013: ¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
• Keywords: 放射線検出器 / CdTe / エピタキシャル成長 / 電子デバイス

Outline of Final Research Achievements

Development of high performance x-ray video camera, which consists of 2-dimensional avalanche photodiode (APD) arrays, has been studied. The APDs with structure of p+-CdTe/p-CdTe/n-CdTe/n+-Si were fabricated using single crystal CdTe layers grown on Si substrates by metalorganic vapor phase epitaxy. To realize high performance APD arrays, those have low dark current and uniform distribution of multiplication, optimizations of growth procedures of CdTe layers, and improvement of fabrication process have been carried out.

Research Products

• [Journal Article] Surface processing of CdTe detectors using hydrogen bromide-based etching solution (2015)
  • Author(s): M.Niraula, K.Yasuda, N.Takai, M.Matsumoto, Y.Suzuki, Y.Tsukamoto, Y.Ito, S.Sugimoto, S.Kouno, D.Yamazaki, Y.Agata
  • Journal Title: IEEE Electron Device Letters Volume: 16 Issue: 8 Pages: 856-858
  • DOI: 10.1109/led.2015.2450835
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Development of large-area imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates (2014)
  • Author(s): M.Niraula, K.Yasuda, H.Yamashita et al.
  • Journal Title: IEEE Trans. Nucl. Sci. Volume: 61 Issue: 5 Pages: 2555-2558
  • DOI: 10.1109/tns.2014.2347374
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Development of nuclear-radiation detectros using thick single-crystal CdTe layers grown on (211) p+-Si substrates by MOVPE (2014)
  • Author(s): K.Yasuda, M.Niraula, Y.Wajima et al.
  • Journal Title: J. Electron. Materials Volume: 43 Issue: 8 Pages: 2860-2863
  • DOI: 10.1007/s11664-014-3132-3
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray and gamma-ray spectroscopic detector development (2014)
  • Author(s): M.Niraula, K.Yasuda, H.Yamashita et al.
  • Journal Title: Phys. Status Solid Volume: C11 Issue: 7-8 Pages: 1333-1336
  • DOI: 10.1002/pssc.201300559
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Charge transport properties of p-CdTe/n-CdTe/n+-Si diode-type nuclear radiation detectors based on metalorganic vapor-phase epitaxy-grown epilayers (2013)
  • Author(s): M.Niraula, K.Yasuda, Y.Wajima
  • Journal Title: J. Appl. Phys. Volume: 114 Issue: 16 Pages: 164510-164515
  • DOI: 10.1063/1.4828479
  • Peer Reviewed
• [Journal Article] Post growth annaling of CdTe layers grown on Si substartes by metalorganic vapor phase epitaxy (2013)
  • Author(s): K.Yasuda, M.Niraula, S.Namba, et al.
  • Journal Title: J. Electron. Mater. Volume: 42 Issue: 11 Pages: 3125-3128
  • DOI: 10.1007/s11664-013-2680-2
  • Peer Reviewed
• [Presentation] MOVPE法による(211)及び(100)Si基板上のCdTe成長層のフォトルミネッセンス特性 (2016)
  • Author(s): 北川 翔三、神野 悟史、伊藤 祐葵、杉本 宗一郎、山崎 大輔、小島 將弘、坪田眞太郎、､安形 保則、ニラウラ マダン、安田 和人
  • Organizer: 2016第63回応用物理学会春期学術講演会
  • Place of Presentation: 東工大(東京）
  • Year and Date: 2016-03-22
• [Presentation] MOVPE法による(211)Si基板上のAsドープCdTe層のフォトルミネッセンス特性 (2016)
  • Author(s): 小島 將弘、伊藤 祐葵、神野 悟史、杉本 宗一郎、山崎 大輔、北川 翔三、坪田眞太郎、安田 和人、ニラウラ マダン､安形 保則
  • Organizer: 2016第63回応用物理学会春期学術講演会
  • Place of Presentation: 東工大(東京）
  • Year and Date: 2016-03-22
• [Presentation] MOVPE法による(211)CdTe／Si成長層のエッチピット評価 (2016)
  • Author(s): 坪田眞太郎、杉本 宗一郎、伊藤 祐葵、山崎 大輔、神野 悟史、小島 將弘、北川 翔三、、安田 和人、ニラウラ マダン､安形 保則
  • Organizer: 2016第63回応用物理学会春期学術講演会
  • Place of Presentation: 東工大(東京）
  • Year and Date: 2016-03-22
• [Presentation] Chracterization of large-area spectroscopic imaging array fabricated using epitaxially grown thick single crystal CdTe layers on Si substrates (2015)
  • Author(s): M.Niraula, K.Yasuda, S.Kouno, S.Sugimoto, Y,Ito, D.Yamazaki, K.Kojima, S.Kitagawa, Y.Agata
  • Organizer: IEEE 2015 22nd International Workshop on Room-Temperature
  • Place of Presentation: San Diego (USA)
  • Year and Date: 2015-11-02
  • Int'l Joint Research
• [Presentation] Study of CdTe surface processed with hydrogen bromide based etching solution (2015)
  • Author(s): M.Niraula, K.Yasuda, Y,Ito, D.Yamazaki, S.Sugimoto, S.Kouno, S.Kitagawa, K.Kojima, Y.Agata
  • Organizer: IEEE 2015 22nd International Workshop on Room-Temperature Semiconductor X-ray and Gamma Ray Detectors
  • Place of Presentation: San Diego (USA)
  • Year and Date: 2015-11-02
  • Int'l Joint Research
• [Presentation] HBr系エッチング液によるCdTe検出器の表面処理の検討 (2015)
  • Author(s): 神野 悟史、ニラウラ マダン、安田 和人 他
  • Organizer: 第62回応用物理学関係連合講演会
  • Place of Presentation: 東海大学湘南キャンパス
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] MOVPE法による大面積CdTeX線・γ線画像検出器に関する研究 (2014)
  • Author(s): 松本雅彦，ニラウラ マダン、安田 和人 他
  • Organizer: 応用物理学会学術講演会
  • Place of Presentation: 北海道大学
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] MOVPE法によるCdTe/Si厚膜層を用いたエネルギー識別能力を持つX線γ線画像検出器の開発（III) (2014)
  • Author(s): 高井紀明, 山下隼, 安田和人、他
  • Organizer: 第61回応用物理学関係連合講演会
  • Place of Presentation: 青山学院大学相模原キャンパス
• [Presentation] Development of large-area imaging arrays using epitaxially grown thick single crystal CdTe layers on Si substrates (2013)
  • Author(s): M.Niraula, K.Yasuda, H.Yamashita, et al.
  • Organizer: IEEE 2013 20th International Workshop on Room-Temperature
  • Place of Presentation: Seoul, Korea
  • Invited
• [Presentation] Development of nuclear-radiation detectros using thick single-crystal CdTe layers grown on (211) p+-Si substrates by MOVPE (2013)
  • Author(s): K.Yasuda, M.Niraula, Y.Wajima, et al.
  • Organizer: 2013 US Workshop on the Phys. Chem. II-VI Materials
  • Place of Presentation: Chicago, USA
• [Presentation] Vapor-phase epitaxial growth of thick single crystal CdTe on Si substrate for X-ray and gamma-ray spectroscopic detector development (2013)
  • Author(s): M.Niraula, K.Yasuda, H.Yamashita, et al.
  • Organizer: The 16th International Conference on II-VI Compounds and Related Materials
  • Place of Presentation: Nagahama, Japan
• [Remarks] 名古屋工業大学安田研究室
  • URL: http://yasuda.web.nitech.ac.jp/
• [Remarks] 名古屋工業大学安田研究室
  • URL: http://yasuda.web.nitech.ac.jp/