Study on physics of accumulated spins and pure spin currents in Si
| Project/Area Number |
25246019
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials
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| Research Institution | Kyoto University |
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Principal Investigator |
Shiraishi Masashi 京都大学, 工学(系)研究科(研究院), 教授 (30397682)
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| Co-Investigator(Kenkyū-buntansha) |
Ando Yuichiro 京都大学, 大学院工学研究科, 助教 (50618361)
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| Project Period (FY) |
2013-05-31 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥47,190,000 (Direct Cost: ¥36,300,000、Indirect Cost: ¥10,890,000)
Fiscal Year 2015: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2014: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
Fiscal Year 2013: ¥29,380,000 (Direct Cost: ¥22,600,000、Indirect Cost: ¥6,780,000)
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| Keywords | スピントロニクス / シリコン / スピントランジスタ / スピンカロリトロニクス / スピン流 / スピン依存ゼーベック効果 / スピンエレクトロニクス / 純スピン流 / スピンドリフト |
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| Outline of Final Research Achievements |
Significant milestones achieved in this research project are: (1) creation of Si spin MOS transistors, which can replace conventional Si CMOS devices, and its room temperature operations, and (2) observation of spincaloritronic effects in Si, which allows solving a tremendous waste heat issue in Si CMOS devices.
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Report
(4 results)
Research Products
(26 results)
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[Journal Article] Spin drift in highly doped n-type Si2014
Author(s)
Makoto Kameno, Yuichiro Ando, Teruya Shinjo, Hayato Koike, Tomoyuki Sasaki, Tohru Oikawa, Toshio Suzuki, and Masashi Shiraishi
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Journal Title
Applied Physics Letters
Volume: 104
Issue: 9
Pages: 92409-92409
DOI
Related Report
Peer Reviewed
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