| Project/Area Number |
25246020
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Applied materials
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| Research Institution | Osaka University (2014-2016)
Kyushu University (2013) |
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Principal Investigator |
Hamaya Kohei 大阪大学, 基礎工学研究科, 教授 (90401281)
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| Co-Investigator(Kenkyū-buntansha) |
斉藤 好昭 株式会社東芝研究開発センター, その他部局等, その他 (80393859)
澤野 憲太郎 東京都市大学, 工学部, 准教授 (90409376)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥42,250,000 (Direct Cost: ¥32,500,000、Indirect Cost: ¥9,750,000)
Fiscal Year 2015: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
Fiscal Year 2014: ¥13,780,000 (Direct Cost: ¥10,600,000、Indirect Cost: ¥3,180,000)
Fiscal Year 2013: ¥19,630,000 (Direct Cost: ¥15,100,000、Indirect Cost: ¥4,530,000)
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| Keywords | スピントロニクス / ゲルマニウム / 結晶成長 / スピン注入 / MBE / 金属-半導体界面 |
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| Outline of Final Research Achievements |
In this project, we have studied an innovation of vertical-type Ge-based spin MOSFET with Schottky-tunnel contacts.
We have obtained three main research results. First, using MBE technique, we have fabricated all-epitaxial ferromagnet/Ge/ferromagnet vertical stacked structures for the first time. Next, spin injection and detection through p-Ge/ferromagnet vertical structures can be demonstrated. This is the first observation of spin transport in p-Ge. Finally, using ferromagnet/Ge/ferromagnet vertical stacked structures, we have observed spin-dependent transport depending on magnetization configuration between ferromagnets. This can be observed up to room temperature. Since the spin signals at room temperature is still small, we should enhance them by making some efforts such as the suppression of spin relaxation in Ge and the use of highly spin-polarized spin injector and detector.
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