Development of near-infrared germanium laser operating at room temperature using electron injection into the direct-gap valley.
Project/Area Number |
25246021
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Research Category |
Grant-in-Aid for Scientific Research (A)
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Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Crystal engineering
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Research Institution | The University of Tokyo |
Principal Investigator |
FUKATSU Susumu 東京大学, 総合文化研究科, 教授 (60199164)
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Co-Investigator(Kenkyū-buntansha) |
YASUTAKE Yuhsuke 東京大学, 総合文化研究科, 助教 (10526726)
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Project Period (FY) |
2013-04-01 – 2016-03-31
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Project Status |
Completed (Fiscal Year 2015)
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Budget Amount *help |
¥45,630,000 (Direct Cost: ¥35,100,000、Indirect Cost: ¥10,530,000)
Fiscal Year 2015: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2014: ¥15,990,000 (Direct Cost: ¥12,300,000、Indirect Cost: ¥3,690,000)
Fiscal Year 2013: ¥21,840,000 (Direct Cost: ¥16,800,000、Indirect Cost: ¥5,040,000)
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Keywords | ゲルマニウム / レーザー / 直接遷移 / 電子制御バレートロニクス / 量子カスケード類似構造 / 熱い電子 / バレー間ファノン散乱 / 直接バレー電子注入 / 外場制御バレートロニクス / バレー間フォノン散乱 / 電子ラマン散乱 / 実空間遷移 / 波数空間遷移 / 伝導帯バレー選択的光励起法 |
Outline of Final Research Achievements |
Germanium (Ge) is the frontrunner in pursuit of integrating and/or hybridizing the photonic/electronic functionalities on one chip. This is due to the fact that its direct-band-gap emission covers the telecommunication wavelengths besides the compatibility with silicon processing and inherent high carrier mobility. An attempt was made to create a new class of near-infrared interband lasers operating at room temperature using such direct-band-gap emission of Ge. We aimed at defeating the otherwise intractable indirect-gap nature of Ge through the development of a viable valleytronic technique that allows efficient electron injection to the direct conduction-band-valley with an applied field. A deeper physical insight was gained into some of the Ge-specific properties such as hot electrons, intervalley coupling and its impact on the room-temperature Landau splitting, and resonant electronic Raman scattering, which likely make inroads into a new realm leading to novel group-IV lasers.
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Report
(4 results)
Research Products
(26 results)
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[Presentation] Ge Light Emitting DIodes2015
Author(s)
S. Fukatsu
Organizer
Energy, Materials and Nanotechnology Bangkok Meeting
Place of Presentation
Holiday Inn Bangkok Silom, Bangkok, Thailand
Year and Date
2015-11-10
Related Report
Int'l Joint Research / Invited
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[Presentation] Valley-selected interband absorption in Ge2014
Author(s)
T. Sakamoto, S. Hayashi, Y. Yasutake, S. Fukatsu
Organizer
Materilals Reserach Society Fall Meeting
Place of Presentation
Hynes Convention Center, Boston, Massachusetts, United States
Year and Date
2014-11-30
Related Report
Int'l Joint Research
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[Presentation] Bulk Ge revisited: Toward group-IV interband laser2013
Author(s)
S. Fukatsu, Y. Terada, S. Hayashi, and Y. Yasutake
Organizer
The 3rd International Symposium on Photonics and Electronics Convergence -Advanced Nanophotonics and Silicon Device Systems
Place of Presentation
ENEOS Hall Komaba Research Campus, 東京都目黒区
Year and Date
2013-11-18 – 2013-11-20
Related Report
Invited
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