| Budget Amount *help |
¥45,630,000 (Direct Cost: ¥35,100,000、Indirect Cost: ¥10,530,000)
Fiscal Year 2015: ¥7,800,000 (Direct Cost: ¥6,000,000、Indirect Cost: ¥1,800,000)
Fiscal Year 2014: ¥15,990,000 (Direct Cost: ¥12,300,000、Indirect Cost: ¥3,690,000)
Fiscal Year 2013: ¥21,840,000 (Direct Cost: ¥16,800,000、Indirect Cost: ¥5,040,000)
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| Outline of Final Research Achievements |
Germanium (Ge) is the frontrunner in pursuit of integrating and/or hybridizing the photonic/electronic functionalities on one chip. This is due to the fact that its direct-band-gap emission covers the telecommunication wavelengths besides the compatibility with silicon processing and inherent high carrier mobility. An attempt was made to create a new class of near-infrared interband lasers operating at room temperature using such direct-band-gap emission of Ge. We aimed at defeating the otherwise intractable indirect-gap nature of Ge through the development of a viable valleytronic technique that allows efficient electron injection to the direct conduction-band-valley with an applied field. A deeper physical insight was gained into some of the Ge-specific properties such as hot electrons, intervalley coupling and its impact on the room-temperature Landau splitting, and resonant electronic Raman scattering, which likely make inroads into a new realm leading to novel group-IV lasers.
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