| Budget Amount *help |
¥47,060,000 (Direct Cost: ¥36,200,000、Indirect Cost: ¥10,860,000)
Fiscal Year 2016: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2014: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2013: ¥27,950,000 (Direct Cost: ¥21,500,000、Indirect Cost: ¥6,450,000)
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| Outline of Final Research Achievements |
Growth mechanism, doping property and optical property of AlN-based semiconductor and its heterostructures were studied. We developed these single-crystal growth technology, high-efficiency doping, and device fabrication. We achieved high-efficiency AlN-based LED and photo-pumped deep-UV lasing from AlGaN quantum wells. We also developed a growth method for single-crystal cubic BN, which is able to make new heterostructures with AlN and Diamond. These results will contribute to further developments of AlN-based materials and devices, and crystal growth technologies for creating new materials.
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