Research on AlN-based heterostructure growth and UV light-emitting devices
Project/Area Number |
25246022
|
Research Category |
Grant-in-Aid for Scientific Research (A)
|
Allocation Type | Single-year Grants |
Section | 一般 |
Research Field |
Crystal engineering
|
Research Institution | NTT Basic Research Laboratories |
Principal Investigator |
Taniyasu Yoshitaka 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 主幹研究員 (20393738)
|
Co-Investigator(Kenkyū-buntansha) |
熊倉 一英 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 特別研究員 (00393736)
平間 一行 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 研究主任 (50434329)
山本 秀樹 日本電信電話株式会社NTT物性科学基礎研究所, 機能物質科学研究部, 部長 (70393733)
|
Project Period (FY) |
2013-04-01 – 2017-03-31
|
Project Status |
Completed (Fiscal Year 2016)
|
Budget Amount *help |
¥47,060,000 (Direct Cost: ¥36,200,000、Indirect Cost: ¥10,860,000)
Fiscal Year 2016: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥7,670,000 (Direct Cost: ¥5,900,000、Indirect Cost: ¥1,770,000)
Fiscal Year 2014: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2013: ¥27,950,000 (Direct Cost: ¥21,500,000、Indirect Cost: ¥6,450,000)
|
Keywords | 結晶成長 / 半導体物性 / 窒化物半導体 / 発光デバイス / 紫外 |
Outline of Final Research Achievements |
Growth mechanism, doping property and optical property of AlN-based semiconductor and its heterostructures were studied. We developed these single-crystal growth technology, high-efficiency doping, and device fabrication. We achieved high-efficiency AlN-based LED and photo-pumped deep-UV lasing from AlGaN quantum wells. We also developed a growth method for single-crystal cubic BN, which is able to make new heterostructures with AlN and Diamond. These results will contribute to further developments of AlN-based materials and devices, and crystal growth technologies for creating new materials.
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Report
(5 results)
Research Products
(42 results)
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[Patent(Industrial Property Rights)] 発光素子2015
Inventor(s)
平間一行, 谷保芳孝, 狩元慎一, 山本秀樹
Industrial Property Rights Holder
平間一行, 谷保芳孝, 狩元慎一, 山本秀樹
Industrial Property Rights Type
特許
Industrial Property Number
2015-032976
Filing Date
2015-02-23
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