| Budget Amount *help |
¥45,370,000 (Direct Cost: ¥34,900,000、Indirect Cost: ¥10,470,000)
Fiscal Year 2017: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2016: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
Fiscal Year 2015: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2014: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2013: ¥15,080,000 (Direct Cost: ¥11,600,000、Indirect Cost: ¥3,480,000)
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| Outline of Final Research Achievements |
In the lithography, the development of resist materials has been proceeded to realize the high-volume production of semiconductor devices with 11 nm resolution and beyond. In addition to the improvement of sensitivity, it is required for the resist materials to suppress the sidewall roughness of resist patterns (line edge roughness). In this study, the resist material design for <11 nm resolution fabrication was obtained by the analysis of chemical reactions induced in the nanoscale space through (i) the conversion of the time-dependent behavior of intermediates to their temporal changes of the spatial distribution, (ii) the estimation of the temporal change of the spatial distribution of intermediates using the measurement of the pattern shapes after chemical reactions, (iii) the measurement of spur overlap ( the analysis of the overlap of time and space), and (iv) the development of simulation code and the analysis.
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