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Study on nanochemistry in latest nanofabrication materials using quantum beams

Research Project

Project/Area Number 25246036
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Quantum beam science
Research InstitutionOsaka University

Principal Investigator

Kozawa Takahiro  大阪大学, 産業科学研究所, 教授 (20251374)

Co-Investigator(Kenkyū-buntansha) 山本 洋揮  大阪大学, 産業科学研究所, 助教 (00516958)
小林 一雄  大阪大学, 産業科学研究所, 助教 (30116032)
室屋 裕佐  大阪大学, 産業科学研究所, 准教授 (40334320)
Project Period (FY) 2013-04-01 – 2018-03-31
Project Status Completed (Fiscal Year 2017)
Budget Amount *help
¥45,370,000 (Direct Cost: ¥34,900,000、Indirect Cost: ¥10,470,000)
Fiscal Year 2017: ¥6,240,000 (Direct Cost: ¥4,800,000、Indirect Cost: ¥1,440,000)
Fiscal Year 2016: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
Fiscal Year 2015: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2014: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2013: ¥15,080,000 (Direct Cost: ¥11,600,000、Indirect Cost: ¥3,480,000)
Keywords放射線、X線、粒子線 / 半導体超微細化 / シミュレーション工学 / 計算物理 / 放射線、X線、粒子線
Outline of Final Research Achievements

In the lithography, the development of resist materials has been proceeded to realize the high-volume production of semiconductor devices with 11 nm resolution and beyond. In addition to the improvement of sensitivity, it is required for the resist materials to suppress the sidewall roughness of resist patterns (line edge roughness). In this study, the resist material design for <11 nm resolution fabrication was obtained by the analysis of chemical reactions induced in the nanoscale space through (i) the conversion of the time-dependent behavior of intermediates to their temporal changes of the spatial distribution, (ii) the estimation of the temporal change of the spatial distribution of intermediates using the measurement of the pattern shapes after chemical reactions, (iii) the measurement of spur overlap ( the analysis of the overlap of time and space), and (iv) the development of simulation code and the analysis.

Report

(6 results)
  • 2017 Annual Research Report   Final Research Report ( PDF )
  • 2016 Annual Research Report
  • 2015 Annual Research Report
  • 2014 Annual Research Report
  • 2013 Annual Research Report
  • Research Products

    (46 results)

All 2017 2016 2015 2014 2013 Other

All Journal Article (29 results) (of which Peer Reviewed: 29 results,  Acknowledgement Compliant: 9 results) Presentation (15 results) (of which Int'l Joint Research: 6 results,  Invited: 6 results) Remarks (2 results)

  • [Journal Article] Theoretical study on effects of photodecomposable quenchers in line-and-space pattern fabrication with 7 nm quarter-pitch using chemically amplified electron beam resist process2017

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 56 Issue: 4 Pages: 046502-046502

    • DOI

      10.7567/jjap.56.046502

    • NAID

      210000147536

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Rational Tuning of Superoxide Sensitivity in SoxR, the [2Fe-2S] Transcription Factor: Implications of Species-Specific Lysine Residues2017

    • Author(s)
      M. Fujikawa, K. Kobayashi, Y. Tsutsui, T. Tanaka, and T. Kozawa
    • Journal Title

      Biochemistry

      Volume: 56 Issue: 2 Pages: 403-410

    • DOI

      10.1021/acs.biochem.6b01096

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Ecofriendly ethanol-developable processes for electron beam lithography using positive-tone dextrin resist material2017

    • Author(s)
      S. Takei, N. Sugino, M. Hanabata, A. Oshima, M. Kashiwakura, T. Kozawa, and S. Tagawa
    • Journal Title

      Appl. Phys. Express

      Volume: 10 Issue: 7 Pages: 076502-076502

    • DOI

      10.7567/apex.10.076502

    • NAID

      210000135930

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Synthesis and Property of Tellurium-Containing Polymer for Extreme Ultraviolet Resist Material2017

    • Author(s)
      M. Fukunaga, H. Yamamoto, T. Kozawa, T. Watanabe, and H. Kudo
    • Journal Title

      J. Photopolym. Sci. Technol.

      Volume: 30 Pages: 103-107

    • NAID

      130005950306

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dynamics of Radical Ions of Hydroxyhexafluoroisopropyl-Substituted Benzenes2017

    • Author(s)
      K. Okamoto, N. Nomura, R. Fujiyoshi, K. Umegaki, H. Yamamoto, K. Kobayashi, and T. Kozawa
    • Journal Title

      J. Phys. Chem. A

      Volume: 121 Issue: 49 Pages: 9458-9465

    • DOI

      10.1021/acs.jpca.7b09842

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Study on Resist Performance of Noria Derivatives Modified with Various Protection Ratios of Acetal Moieties by means of Extreme Ultraviolet Irradiation2017

    • Author(s)
      H. Yamamoto, H. Kudo, and T. Kozawa
    • Journal Title

      J. Photopolym. Sci. Technol.

      Volume: 30 Pages: 627-631

    • NAID

      130006309146

    • Related Report
      2017 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: IV. Comparison with experimental results2016

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 5 Pages: 056503-056503

    • DOI

      10.7567/jjap.55.056503

    • NAID

      210000146475

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Chemically amplified molecular resists based on noria derivatives containing adamantyl ester groups for electron beam lithography2016

    • Author(s)
      H. Yamamoto, S. Tagawa, T. Kozawa, H. Kudo, and K. Okamoto
    • Journal Title

      J. Vac. Sci. Technol. B

      Volume: 34 Issue: 4 Pages: 041606-041606

    • DOI

      10.1116/1.4953068

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Dynamics of radical cations of poly(4-hydroxystyrene) in the presence and absence of triphenylsulfonium triflate as determined by pulse radiolysis of its highly concentrated solution2016

    • Author(s)
      K. Okamoto, T. Ishida, H. Yamamoto, T. Kozawa, R. Fujiyoshi, and K. Umegaki
    • Journal Title

      Chem. Phys. Lett.

      Volume: 657 Pages: 44-48

    • DOI

      10.1016/j.cplett.2016.05.058

    • NAID

      120006488393

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Synthesis and Resist Properties of Calixarene Polymers with Pendant Haloalkyl Groups2016

    • Author(s)
      H. Kudo, H. Ogawa, H. Yamamoto, and T. Kozawa
    • Journal Title

      J. Photopolym. Sci. Technol.

      Volume: 29 Pages: 495-500

    • NAID

      130005256573

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical study of fabrication of line-and-space patterns with 7 nm quarter-pitch using electron beam lithography with chemically amplified resist process: V. Optimum beam size2016

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 55 Issue: 10 Pages: 106502-106502

    • DOI

      10.7567/jjap.55.106502

    • NAID

      210000147139

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Requirement for Suppression of Line Width Roughness in Fabrication of Line-and-Space Patterns with 7 nm Quarter-Pitch Using Electron Beam Lithography with Chemically Amplified Resist Process2016

    • Author(s)
      T. Kozawa
    • Journal Title

      J. Photopolym. Sci. Technol.

      Volume: 29 Pages: 809-816

    • NAID

      130005338001

    • Related Report
      2016 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effects of diffusion constant of photodecomposable quencher on chemical gradient of chemically amplified extreme-ultraviolet resists2015

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 5 Pages: 056502-056502

    • DOI

      10.7567/jjap.54.056502

    • NAID

      210000145155

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Study on Dissolution Behavior of Poly(4-hydroxystyrene) as Model Polymer of Chemically Amplified Resists for Extreme Ultraviolet Lithography2015

    • Author(s)
      M. Mitsuyasu, H. Yamamoto, and T. Kozawa
    • Journal Title

      J. Photopolym. Sci. Technol.

      Volume: 28 Pages: 119-124

    • NAID

      130005090251

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Resist material options for extreme ultraviolet lithography2015

    • Author(s)
      T. Kozawa
    • Journal Title

      Adv. Opt. Techn.

      Volume: 4 Pages: 311-317

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Optimum concentration ratio of photodecomposable quencher to acid generator in chemically amplified extreme ultraviolet resists2015

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 12 Pages: 126501-126501

    • DOI

      10.7567/jjap.54.126501

    • NAID

      210000145864

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Acid Quantum Efficiency of Anion-bound Chemically Amplified Resists upon Exposure to Extreme Ultraviolet Radiation2015

    • Author(s)
      Y. Komuro, D. Kawana, T. Hirayama, K. Ohmori, and T. Kozawa
    • Journal Title

      J. Photopolym. Sci. Technol.

      Volume: 28 Pages: 501-505

    • NAID

      130005101106

    • Related Report
      2015 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Relationships between quencher diffusion constant and exposure dose dependences of line width, line edge roughness, and stochastic defect generation in extreme ultraviolet lithography2015

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 1 Pages: 016502-016502

    • DOI

      10.7567/jjap.54.016502

    • NAID

      210000144712

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Effects of dose shift on line width, line edge roughness, and stochastic defect generation in chemically amplified extreme ultraviolet resist with photodecomposable quencher2015

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 1 Pages: 016503-016503

    • DOI

      10.7567/jjap.54.016503

    • NAID

      210000144713

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Modeling and simulation of acid generation in anion-bound chemically amplified resists used for extreme ultraviolet lithography2015

    • Author(s)
      Y. Komuro, D. Kawana, T. Hirayama, K. Ohomori, and T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 54 Issue: 3 Pages: 036506-036506

    • DOI

      10.7567/jjap.54.036506

    • NAID

      210000144872

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Theoretical relationship between quencher diffusion constant and effective reaction radius for neutralization in contact hole imaging using chemically amplified extreme ultraviolet resists2014

    • Author(s)
      T. Kozawa and T. Hirayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 6 Pages: 066502-066502

    • DOI

      10.7567/jjap.53.066502

    • NAID

      210000144037

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Relationship between stochasticity and wavelength of exposure source in lithography2014

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 6 Pages: 066505-066505

    • DOI

      10.7567/jjap.53.066505

    • NAID

      210000144040

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Effect of photodecomposable quencher on latent image quality in extreme ultraviolet lithography2014

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 6 Pages: 066508-066508

    • DOI

      10.7567/jjap.53.066508

    • NAID

      210000144043

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Acid generation mechanism in anion-bound chemically amplified resists used for extreme ultraviolet lithography2014

    • Author(s)
      Y. Komuro, H. Yamamoto, K. Kobayashi, Y. Utsumi, K. Ohomori, and T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 11 Pages: 116503-116503

    • DOI

      10.7567/jjap.53.116503

    • NAID

      210000144600

    • Related Report
      2014 Annual Research Report
    • Peer Reviewed / Acknowledgement Compliant
  • [Journal Article] Acid diffusion length in contact hole imaging of chemically amplified extreme ultraviolet resists2014

    • Author(s)
      T. Kozawa and T. Hirayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 53 Issue: 1 Pages: 16503-16503

    • DOI

      10.7567/jjap.53.016503

    • NAID

      210000143250

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Theoretical Relationship between Quencher Diffusion Constant and Image Quality in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography2013

    • Author(s)
      T. Kozawa
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 7R Pages: 76504-76504

    • DOI

      10.7567/jjap.52.076504

    • NAID

      210000142465

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Deprotonation of poly(4-hydroxystyrene) intermediates: pulse radiolysis study of EUV and electron beam resist2013

    • Author(s)
      Kazumasa Okamoto, Tyo Matsuda, Hiroki Yamamoto, Takahiro Kozawa, Seiichi Tagawa, Ryoko Fujiyoshi, and Takashi Sumiyoshi
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 6S Pages: 06GC04-06GC04

    • DOI

      10.7567/jjap.52.06gc04

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Stochastic Effect on Contact Hole Imaging of Chemically Amplified Extreme Ultraviolet Resists2013

    • Author(s)
      T. Kozawa and T. Hirayama
    • Journal Title

      Jpn. J. Appl. Phys.

      Volume: 52 Issue: 8R Pages: 86501-86501

    • DOI

      10.7567/jjap.52.086501

    • NAID

      40019757406

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Journal Article] Effect of Initial Dispersion of Protected Units on Line Edge Roughness of Chemically Amplified Extreme Ultraviolet Resists2013

    • Author(s)
      T. Kozawa
    • Journal Title

      J. Photopolym. Sci. Technol.

      Volume: 26 Pages: 643-648

    • NAID

      130004465046

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Presentation] Resist material options for extreme ultraviolet lithography2017

    • Author(s)
      T. Kozawa
    • Organizer
      Kickoff Meeting (JSPS Symposium) for the ZIAM/GBB and ISIR/IPR collaboration
    • Related Report
      2017 Annual Research Report
    • Int'l Joint Research
  • [Presentation] 次世代半導体の微細化限界の打破は可能か?2017

    • Author(s)
      古澤孝弘
    • Organizer
      第11回 産研ざっくばらんトーク
    • Related Report
      2017 Annual Research Report
  • [Presentation] 光・ビーム科学と計算機科学の融合による超微細加工材料開発2017

    • Author(s)
      古澤孝弘
    • Organizer
      第22回光エレクトロニクスフォーラム
    • Related Report
      2017 Annual Research Report
  • [Presentation] Challenges in sub-10 nm fabrication using EUV lithography2016

    • Author(s)
      T. Kozawa, J.J. Santillan, and T. Itani
    • Organizer
      14th Fraunhofer IISB Lithography Simulation Workshop
    • Place of Presentation
      Hersbruck, Germany
    • Year and Date
      2016-09-22
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research
  • [Presentation] Synthesis and Resist Properties of Calixarene Polymers with Pendant Haloalkyl Groups2016

    • Author(s)
      H. Kudo, H. Ogawa, H. Yamamoto, and T. Kozawa
    • Organizer
      The 33rd International Conference of Photopolymer Science and Technology
    • Place of Presentation
      Chiba, Japan
    • Year and Date
      2016-06-22
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Molecular Resist Materials for Extreme Ultraviolet Lithography2016

    • Author(s)
      H. Yamamoto, H. Kudo, and T. Kozawa
    • Organizer
      2016 International Workshop on EUV Lithography
    • Place of Presentation
      CA, USA
    • Year and Date
      2016-06-13
    • Related Report
      2016 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Resist material options for extreme ultraviolet lithography2015

    • Author(s)
      T. Kozawa
    • Organizer
      MNE2015
    • Place of Presentation
      オランダ
    • Year and Date
      2015-09-21
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Dissolution Dynamics of Chemically Amplified Resists for Extreme Ultraviolet Lithography Studied by Quartz Crystal Microbalance2015

    • Author(s)
      M. Mitsuyasu, H. Yamamoto, and T. Kozawa
    • Organizer
      2015 International Workshop on EUV Lithography
    • Place of Presentation
      米国ハワイ
    • Year and Date
      2015-07-15
    • Related Report
      2015 Annual Research Report
    • Int'l Joint Research / Invited
  • [Presentation] Acid generation mechanism in anion bound chemically amplified resists used for extreme-ultraviolet lithography2015

    • Author(s)
      Y. Komuro, H. Yamamoto, K. Kobayashi, K. Ohomori, and T. Kozawa
    • Organizer
      SPIE Advanced Lithography
    • Place of Presentation
      San Jose, California, USA
    • Year and Date
      2015-02-22 – 2015-02-26
    • Related Report
      2014 Annual Research Report
  • [Presentation] Effects of low-molecular weight resist components on dissolution behavior of chemically-amplified resists for extreme ultraviolet lithography studied by quartz crystal microbalance2015

    • Author(s)
      M. Masaki, H. Yamamoto, and T. Kozawa
    • Organizer
      SPIE Advanced Lithography
    • Place of Presentation
      San Jose, California, USA
    • Year and Date
      2015-02-22 – 2015-02-26
    • Related Report
      2014 Annual Research Report
  • [Presentation] Study on Dissolution Behavior of Chemically Amplified Resists for Extreme Ultraviolet Lithography2014

    • Author(s)
      M. Mitsuyasu, H. Yamamoto and T. Kozawa
    • Organizer
      27th International Microprocesses and Nanotechnology Conference
    • Place of Presentation
      Fukuoka, Japan
    • Year and Date
      2014-11-04 – 2014-11-07
    • Related Report
      2014 Annual Research Report
  • [Presentation] Fundamental Study on Dissolution Behavior of Chemically Amplified Resist for EUV Lithography2014

    • Author(s)
      M. Mitsuyasu, H. Yamamoto and T. Kozawa
    • Organizer
      Photomask Japan 2014
    • Place of Presentation
      Yokohama, Kanagawa, Japan
    • Year and Date
      2014-04-15 – 2014-04-16
    • Related Report
      2014 Annual Research Report
  • [Presentation] リソグラフィにおけるラインエッジラフネス生成機構と極限解像度2014

    • Author(s)
      古澤孝弘
    • Organizer
      日本学術振興会第132委員会第209回研究会
    • Place of Presentation
      東京
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Nanochemistry in Chemically Amplified Resists Used for Extreme Ultraviolet Lithography2013

    • Author(s)
      T. Kozawa
    • Organizer
      The 57th International Conference on Electron, Ion, and Photon Beam Technology, and Nanofabrication
    • Place of Presentation
      Nashville, Tennessee, USA
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Stochastic effects in chemically amplified resists2013

    • Author(s)
      T. Kozawa
    • Organizer
      11th Fraunhofer IISB Lithography Simulation Workshop
    • Place of Presentation
      Hersbruck, Germany
    • Related Report
      2013 Annual Research Report
  • [Remarks] 大阪大学 産業科学研究所 量子ビーム物質科学研究分野 古澤研究室

    • URL

      http://www.sanken.osaka-u.ac.jp/labs/bms/

    • Related Report
      2017 Annual Research Report
  • [Remarks] 古澤研ホームページ

    • URL

      http://www.sanken.osaka-u.ac.jp/labs/bms/

    • Related Report
      2016 Annual Research Report 2015 Annual Research Report 2014 Annual Research Report

URL: 

Published: 2013-05-15   Modified: 2019-07-29  

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