| Budget Amount *help |
¥44,590,000 (Direct Cost: ¥34,300,000、Indirect Cost: ¥10,290,000)
Fiscal Year 2016: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2015: ¥12,220,000 (Direct Cost: ¥9,400,000、Indirect Cost: ¥2,820,000)
Fiscal Year 2014: ¥13,520,000 (Direct Cost: ¥10,400,000、Indirect Cost: ¥3,120,000)
Fiscal Year 2013: ¥14,430,000 (Direct Cost: ¥11,100,000、Indirect Cost: ¥3,330,000)
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| Outline of Final Research Achievements |
Wide gap semiconductor materials are very promising materials for power device because of their excellent electrical and thermal properties. However, polishing rate of these materials is low and subsurface damage is formed in conventional polishing process. To resolve these issues, we proposed plasma-assisted polishing (PAP), which combines atmospheric-pressure plasma irradiation and soft abrasive polishing, to realize high-efficient and high-integrity finishing of difficult-to-polish materials, such as SiC, GaN and diamond, in dry condition. In the case of SiC and GaN, atomically smooth surfaces having clear step-terrace structure were obtained. In addition, XTEM observation results showed that there was no subsurface damage on the PAP processed surface. Especially, in the case of GaN, Despite the formation of many etch pits due to material defects in conventional CMP, no etch pits were observed on the surface processed by PAP.
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