Study of carrier scattering mechanisms by Ge isotope and interface roughness in Ge thin films
| Project/Area Number |
25249032
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Toriumi Akira 東京大学, 工学(系)研究科(研究院), 教授 (50323530)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥46,670,000 (Direct Cost: ¥35,900,000、Indirect Cost: ¥10,770,000)
Fiscal Year 2015: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2014: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
Fiscal Year 2013: ¥32,370,000 (Direct Cost: ¥24,900,000、Indirect Cost: ¥7,470,000)
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| Keywords | 電子デバイス / 半導体物性 / ゲルマニウム / 同位体 / 界面散乱 |
|---|
| Outline of Final Research Achievements |
By annealing Ge substrate in H2, we have achieved atomically flat Ge surface. As a result, the electron mobility at high electron density has been significantly improved. On the other hand, concerning the Ge isotope effects, we have unfortunately not succeeded in homo-epitaxial growth of 74Ge on Ge substrate. However, we found rather important results that oxygen-related defects in Ge affected the electron peak mobility and they could be annihilated by H2 annealing. Both new findings surely explore Ge CMOS future.
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Report
(4 results)
Research Products
(105 results)
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[Presentation] "Recent progress of Ge junction technology"2015
Author(s)
T. Nishimura, C. H. Lee, T. Nakamura, T. Yajima, K. Nagashio, K. Kita, and A. Toriumi
Organizer
15th International Workshop on Junction Technology (IWJT2015)
Place of Presentation
京都大学宇治キャンパス（京都府・宇治市）
Year and Date
2015-06-12
Related Report
Int'l Joint Research / Invited
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[Presentation] "Direct Band Gap Modulation in Ultra-thin Highly Doped n-type GeOI"2014
Author(s)
S. Kabuyanagi, T. Nishimura, K. Nagashio, and A. Toriumi
Organizer
7th International WorkShop on New Group IV Semiconductor Nanoelectronics and JSPS Core-to-Core Program Joint Seminar "Atomically Controlled Processing for Ultralarge Scale Integration"
Place of Presentation
TOHOKU University(Sendai, Miyagi)
Year and Date
2014-01-27 – 2014-01-28
Related Report
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