| Budget Amount *help |
¥46,670,000 (Direct Cost: ¥35,900,000、Indirect Cost: ¥10,770,000)
Fiscal Year 2015: ¥6,760,000 (Direct Cost: ¥5,200,000、Indirect Cost: ¥1,560,000)
Fiscal Year 2014: ¥7,540,000 (Direct Cost: ¥5,800,000、Indirect Cost: ¥1,740,000)
Fiscal Year 2013: ¥32,370,000 (Direct Cost: ¥24,900,000、Indirect Cost: ¥7,470,000)
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| Outline of Final Research Achievements |
By annealing Ge substrate in H2, we have achieved atomically flat Ge surface. As a result, the electron mobility at high electron density has been significantly improved. On the other hand, concerning the Ge isotope effects, we have unfortunately not succeeded in homo-epitaxial growth of 74Ge on Ge substrate. However, we found rather important results that oxygen-related defects in Ge affected the electron peak mobility and they could be annihilated by H2 annealing. Both new findings surely explore Ge CMOS future.
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