High-quality and Low-resistant SiC crystal
| Project/Area Number |
25249034
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Nagoya University |
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Principal Investigator |
Kamei Kazuhito 名古屋大学, 未来社会創造機構, 招へい教員 (10527576)
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| Co-Investigator(Kenkyū-buntansha) |
原田 俊太 名古屋大学, 未来材料・システム研究所, 助教 (30612460)
宇治原 徹 名古屋大学, 未来材料・システム研究所, 教授 (60312641)
加藤 正史 名古屋工業大学, 工学(系)研究科(研究院), 准教授 (80362317)
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥46,800,000 (Direct Cost: ¥36,000,000、Indirect Cost: ¥10,800,000)
Fiscal Year 2016: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2015: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2014: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
Fiscal Year 2013: ¥32,240,000 (Direct Cost: ¥24,800,000、Indirect Cost: ¥7,440,000)
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| Keywords | 結晶成長 / ドーピング / SiC |
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| Outline of Final Research Achievements |
SiC is expected to be a semiconductor material for next-generation power devices. Reducing a electrical loss, it is necessary to decrease the electrical resistivity of semiconductor materials. In SiC, a doping impurities are nitrogen for n-type and aluminum for p-type. However, highly doping in SiC induces stacking faults. In this study, we developed the doping control in SiC solution growth which is a good method for high-quality SiC crystal. We estimated a modulate doping concentration avoiding the induction stacking faults. And, we made clear the mechanism of doping of nitrogen.
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Report
(5 results)
Research Products
(7 results)
