Low dislocation diamond wafer for power device

• Project/Area Number: 25249036
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Kwansei Gakuin University (2015); National Institute of Advanced Industrial Science and Technology
• Principal Investigator: Shikata Shinichi 関西学院大学, 理工学部, 教授 (00415689)
• Co-Investigator(Kenkyū-buntansha): TOUGE Mutsumi 熊本大学, 先進マグネシウム国際研究センター, 教授 (00107731) ; CHAYAHARA Akiyosshi 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクスセンター, 上級主任研究員 (10357501) ; MOKUNO Yoshiaki 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクスセンター, チーム長 (60358166) ; UMEZAWA Hitoshi 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクスセンター, 主任研究員 (80329135) ; KATOU Yukako 国立研究開発法人産業技術総合研究所, 先進パワーエレクトロニクスセンター, 主任研究員 (90509837)
• Project Period (FY): 2013-05-31 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥44,460,000 (Direct Cost: ¥34,200,000、Indirect Cost: ¥10,260,000); Fiscal Year 2015: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000); Fiscal Year 2014: ¥20,410,000 (Direct Cost: ¥15,700,000、Indirect Cost: ¥4,710,000); Fiscal Year 2013: ¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
• Keywords: 省エネルギー / パワーデバイス / ダイヤモンド

Outline of Final Research Achievements

Low dislocation density CVD diamond wafer has been studied toward diamond power device application. The evaluation technique including X ray topography has been developed and applied to HPHT seed and CVD crystal. Using high quality seed crystal of low dislocation density less than 2000cm-2, high quality CVD crystal copying technology with low dislocation density up to 400cm-2 and low distortion of 2x10-5 has been developed associated with sophisticated UV assist polishing and dry etching techniques for the surface treatment prior to the CVD deposition.

Research Products

• [Journal Article] Single crystal diamond wafer for high power electronics (2016)
  • Author(s): S.Shikata
  • Journal Title: Diamond and Related Materials Volume: 65 Pages: 168-175
  • DOI: 10.1016/j.diamond.2016.03.013
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Two-step polishing technique for single crystal diamond (100) substrate utilizing a chemical reaction with iron plate (2015)
  • Author(s): A.Kubota, S. Nagae, S. Motoyama and M. Touge
  • Journal Title: Diamond and Related Materials Volume: 60 Pages: 75-80
  • DOI: 10.1016/j.diamond.2015.10.026
  • Peer Reviewed / Open Access
• [Journal Article] Nitrogen doped low-dislocation density free-standing single crystal diamond plate fabricated by lift-off process (2014)
  • Author(s): Y. Mokuno, Y Kato, N. Tsubouchi, A. Chayahara, H. Yamada, and S. Shikata
  • Journal Title: Applied Physics Letters Volume: 104 Issue: 25 Pages: 252109-252109
  • DOI: 10.1063/1.4885552
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Evaluation method for grown-in dislocations in CVD single crystal diamond using plasma surface treatment (2014)
  • Author(s): N.Tsubouchi and S. Shikata
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 6 Pages: 068010-068010
  • DOI: 10.7567/jjap.53.068010
  • NAID: 210000144060
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Effect of an Ultraflat Substrate on the Epitaxial Growth of Chemical-Vapor-Deposited Diamond (2014)
  • Author(s): Y.Kato, H.Umezawa and S.Shikata
  • Journal Title: Photon Factory Activity Report, PartA Volume: 30 Pages: 66-67
  • NAID: 10031152708
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Characterization of free-standing single-crystal diamond prepared by hot-filament chemical vapor deposition (2014)
  • Author(s): S.Ohmagari, H.Yamada, H.Umezawa,A.Chayahara,T.Teraji and S.Shikata
  • Journal Title: Diamond and Related Materials Volume: 48 Pages: 19-23
  • DOI: 10.1016/j.diamond.2014.06.001
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Diamond Schottky barrier diode for high-temperature, high-power, and fast switching applications (2014)
  • Author(s): H.Umezawa, S.Shikata, and T.Funaki
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 5S1 Pages: 05FP06-05FP06
  • DOI: 10.7567/jjap.53.05fp06
  • NAID: 210000143883
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] 紫外光励起による単結晶ダイヤモンドの研磨メカニズムに関する研究 (2014)
  • Author(s): 峠 睦，長野拓義，田川智彦，坂本武司，横井裕之，岩本知広，渡邉純二
  • Journal Title: 精密工学会誌 Volume: 80 Pages: 112-116
  • NAID: 130003385047
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] デバイス用ダイヤモンドウェハのUVアシスト研磨に関する研究 (2014)
  • Author(s): 田川智彦，峠 睦，坂本武司，鹿田真一，山田英明，加藤有香子
  • Journal Title: 精密工学会誌 Volume: 80 Pages: 587-591
  • NAID: 130004745482
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Large-area high-quality single crystal diamond (2014)
  • Author(s): M.Schreck , J.Asmussen , S.Shikata , J-C. Arnault , and N. Fujimori
  • Journal Title: MRS Bulletin Volume: 39 Issue: 6 Pages: 504-510
  • DOI: 10.1557/mrs.2014.96
  • Peer Reviewed
• [Journal Article] X-ray Topographic Study of a Homoepitaxial Diamond Layer on an Ultraviolet-irradiated Precision Polished Substrate (2014)
  • Author(s): Y.Kato, H.Umezawa and S.Shikata
  • Journal Title: Acta physica polonica A Volume: 125 Pages: 969-971
  • Peer Reviewed
• [Journal Article] Leakage current analysis of diamond Schottky barrier diodes by defect imaging (2013)
  • Author(s): H. Umezawa, N. Tatsumi, Y. Kato and S. Shikata
  • Journal Title: Diamond and Related Materials Volume: 40 Pages: 56-59
  • DOI: 10.1016/j.diamond.2013.09.011
  • Peer Reviewed
• [Journal Article] Ultraviolet-Irradiated Precision Polishing of Diamond and Its Related Materials (2013)
  • Author(s): Junji Watanabe, Mutsumi Touge, Takeshi Sakamoto
  • Journal Title: Diamond & Related Materials Volume: 39 Pages: 14-19
  • DOI: 10.1016/j.diamond.2013.07.001
  • Peer Reviewed
• [Journal Article] ダイヤモンド砥粒整列ブロックのUVツルーイング技術の開発 (2013)
  • Author(s): 坂本武司，南部陽亮，齋藤廉平，峠 睦，川下智幸，峠 直樹
  • Journal Title: 砥粒加工学会誌 Volume: 57 Pages: 600-604
  • NAID: 10031194042
  • Peer Reviewed
• [Presentation] パワーデバイス用ダイヤモンド単結晶と高品質化 (2015)
  • Author(s): 鹿田真一
  • Organizer: 真空学会
  • Place of Presentation: つくば国際会議場（茨城県つくば市）
  • Year and Date: 2015-12-01
  • Invited
• [Presentation] 石英を用いたCBN砥石の精密ツルーイングと研削性能， (2015)
  • Author(s): 藤林太郎，坂本武司，峠 直樹，峠 睦
  • Organizer: 砥粒加工学会
  • Place of Presentation: 慶応義塾大学（神奈川県横浜市）
  • Year and Date: 2015-09-11
• [Presentation] Single crystal diamond wafer for high power electronics (2015)
  • Author(s): S.Shikata
  • Organizer: Int'l Conf. on Diamond and Carbon Materials
  • Place of Presentation: Bad Homburg, Germany
  • Year and Date: 2015-09-07
  • Int'l Joint Research / Invited
• [Presentation] Local area characterization of self-standing single crystal diamond by Synchrotorn radiation X-ray topograpy and rocking curve measurement (2015)
  • Author(s): H. Umezawa, Y. Kato, Y. Mokuno, S. Shikata, Y. Takahashi, H. Sugiyama, K. Hirano
  • Organizer: Int’l Conf.on New Diamond and Nano Carbons
  • Place of Presentation: グランシップ（静岡県静岡市）
  • Year and Date: 2015-05-25
  • Int'l Joint Research
• [Presentation] 単結晶ダイヤモンド基板の紫外線照射研磨条件の最適化 (2015)
  • Author(s): 浦川 翔，小田和明，坂本武司，横井裕之，峠 睦
  • Organizer: 精密工学会春季大会
  • Place of Presentation: 東京大学、東京
  • Year and Date: 2015-03-17 – 2015-03-19
• [Presentation] ダイレクトウェハ化による低転位単結晶ダイヤモンド基板の作製 (2014)
  • Author(s): 杢野 由明、加藤 有香子、坪内 信輝、茶谷原 昭義、山田 英明、鹿田 真一
  • Organizer: 第28回ダイヤモンドシンポジウム
  • Place of Presentation: 東京電機大学、東京
  • Year and Date: 2014-11-19 – 2014-11-21
• [Presentation] 複屈折像による簡便な転位解析の模索 (2014)
  • Author(s): 加藤有香子，梅沢 仁，鹿田真一
  • Organizer: 第28回ダイヤモンドシンポジウム
  • Place of Presentation: 東京電機大学、東京
  • Year and Date: 2014-11-19 – 2014-11-21
• [Presentation] 単結晶ダイヤモンドに対する紫外線照射研磨メカニズムの解明 (2014)
  • Author(s): 浦川 翔，峠 睦，久保田章亀，坂本武司，山中康乃介
  • Organizer: 精密工学会秋季大会学術講演会
  • Place of Presentation: 鳥取大学、鳥取
  • Year and Date: 2014-09-16 – 2014-09-18
• [Presentation] 高品質高温高圧合成IIa基板を用いたダイレクトウェハ化 (2014)
  • Author(s): 杢野 由明、加藤 有香子、坪内 信輝、山田 英明、茶谷原 昭義、鹿田 真一
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学、札幌
  • Year and Date: 2014-09-15 – 2014-09-19
• [Presentation] 紫外線照射研磨によるダイヤモンドホイール研削性能の高度化 (2014)
  • Author(s): 峠 睦，坂本武司，久保田章亀，川下智幸，峠 直樹
  • Organizer: 砥粒加工学会学術講演会
  • Place of Presentation: 岩手大学、盛岡
  • Year and Date: 2014-09-11 – 2014-09-13
• [Presentation] 超砥粒軸付砥石の UV ツルーイングに関する研究 (2014)
  • Author(s): 坂本武司，三角真彦，久保田章亀，峠 睦
  • Organizer: 砥粒加工学会学術講演会
  • Place of Presentation: 岩手大学、盛岡
  • Year and Date: 2014-09-11 – 2014-09-13
• [Presentation] X-ray Topographic Study of Defect in p- diamond layer of Schottky barrier diode (2014)
  • Author(s): Y. Kato, H. Umezawa, S. Shikata
  • Organizer: International conference on diamond and carbon materials 2014
  • Place of Presentation: Melia Castilla, Madrid, Spain
  • Year and Date: 2014-09-07 – 2014-09-11
• [Presentation] UV-truing of Diamond Grit-arranged Wheel and Evaluation of its Grinding Performance (2014)
  • Author(s): M. TOUGE, T. SAKAMOTO, Y. NAMBU, K. TAKAKI, A. KUBOTA and T. KAWASHITA
  • Organizer: 15th Int. Conf. on Precision Engineering
  • Place of Presentation: Kanazawa Univ.,Kanazawa,Japan
  • Year and Date: 2014-07-22 – 2014-07-25
• [Presentation] Diamond Wafer Prospect for the Power Device Application (2014)
  • Author(s): S.Shikata, H.Umezawa, Y.Kato, S.Ohmagari, H.Yamada, N.Tsubouchi, Y.Mokuno, and A.Chayahara,
  • Organizer: 6th International Workshop on Crystal Growth Technology
  • Place of Presentation: Novotel, Berlin, Germany
  • Year and Date: 2014-06-16 – 2014-06-20
  • Invited
• [Presentation] Diamond based power devices (2014)
  • Author(s): S.Shikata, H.Umezawa, Y.Kato, S.Ohmagari, H.Yamada, N.Tsubouchi, Y.Mokuno, and A.Chayahara,
  • Organizer: New Diamond and Nano Carbons 2014
  • Place of Presentation: Hyatt Regency,Chicago, USA
  • Year and Date: 2014-05-26 – 2014-05-30
  • Invited
• [Presentation] Lift-off Process using High-Quality HPHT IIa Substrate (2014)
  • Author(s): Y.Mokuno, Y.Kato,N.Tsubouchi, H.Yamada,A.Chayahara and S.Shikata,
  • Organizer: New Diamond and Nano Carbons 2014
  • Place of Presentation: Hyatt Regency,Chicago,USA
  • Year and Date: 2014-05-26 – 2014-05-30
• [Presentation] Diamond based power device (2013)
  • Author(s): S.Shikata, H.Umezawa,Y.Kato,H.YamadamN.Tsubouchi,Y.Mokuno,A.Chayahara and T.Funaki
  • Organizer: Int'l Conf.SiC and Related Materials
  • Place of Presentation: Miyazaki, Japan
  • Invited
• [Presentation] Reduction of epitaxial growth dislocations originate from the surface (2013)
  • Author(s): S. Shikata, Y. Kato, H. Umezawa and M.Touge
  • Organizer: JSAP-MRS Joint Symposium
  • Place of Presentation: Kyoto,Japan
• [Presentation] Diamond power devices for high temperature and high current applications (2013)
  • Author(s): H.Umezawa, Y.Kato, and S.Shikata
  • Organizer: JSAP-MRS Joint Symposium
  • Place of Presentation: Kyoto, Japan
• [Presentation] Leakage Current Analysis of Diamond SBDs Operated at High Temperature (2013)
  • Author(s): H.Umezawa and S.Shikata
  • Organizer: Int'l Conf.Solid State Device and Materials
  • Place of Presentation: Fukuoka, Japan
• [Presentation] Fabrication and Characterization of 1mm Size Diamond SBD (2013)
  • Author(s): H.Umezawa, S.Shikata and T.Funaki
  • Organizer: Int'l Conf.Solid State Device and Materials
  • Place of Presentation: Fukuoka, Japan
• [Presentation] パワーデバイス応用を目指したウェハ・デバイスの開発課題 (2013)
  • Author(s): 鹿田 真一、梅澤 仁、加藤 有香子、大曲 新矢、山田 英明、坪内 信輝、杢野 由明、茶谷原 昭義
  • Organizer: 第27回ダイヤモンドシンポジウム
  • Place of Presentation: 日本工業大学（埼玉県 南埼玉郡）
• [Presentation] 低窒素濃度のダイヤモンドバルク単結晶の合成 (2013)
  • Author(s): 杢野 由明、山田 英明、茶谷原 昭義、鹿田 真一
  • Organizer: 第27回ダイヤモンドシンポジウム
  • Place of Presentation: 日本工業大学（埼玉県 南埼玉郡）
• [Presentation] ショットキーバリアダイオードのp-層の欠陥評価 (2013)
  • Author(s): 加藤 有香子、梅澤 仁、鹿田 真一
  • Organizer: 第27回ダイヤモンドシンポジウム
  • Place of Presentation: 日本工業大学（埼玉県 南埼玉郡）
• [Presentation] 溶媒中での鉄の反応性を利用した単結晶ダイヤモンドの研磨メカニズムに関する研究 (2013)
  • Author(s): 本山修也，久保田章亀，峠 睦
  • Organizer: 2013年度精密工学会秋季大会学術講演会
  • Place of Presentation: 関西大学（大阪府 吹田市）
• [Presentation] 大口径ダイヤモンドウェハへのUVアシスト研磨技術の開発 (2013)
  • Author(s): 田川智彦，峠 睦，久保田章亀，坂本武司，鹿田真一，山田英明，加藤有香子
  • Organizer: 2013年度精密工学会秋季大会学術講演会
  • Place of Presentation: 関西大学（大阪府 吹田市）
• [Presentation] 砥粒整列ダイヤモンド砥石のUVツルーイング技術の開発とその加工性能評価 (2013)
  • Author(s): 南部陽亮，齋藤廉平，坂本武司，峠 睦，峠 直樹，川下智幸
  • Organizer: 2013年度精密工学会秋季大会学術講演会
  • Place of Presentation: 関西大学（大阪府 吹田市）
• [Book] 次世代パワー半導体の高性能化と産業展開 (2016)
  • Author(s): 鹿田真一
  • Total Pages: 12
  • Publisher: シーエムシ―出版
• [Patent(Industrial Property Rights)] 半導体ダイヤモンドデバイス用オーミック電極 (2013)
  • Inventor(s): 山田、Somu、鹿田
  • Industrial Property Rights Holder: 山田、Somu、鹿田
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-251748
  • Filing Date: 2013-12-05