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グラフェンNEMS複合機能素子によるオートノマス・超高感度センサー技術の創製

Research Project

Project/Area Number 25249043
Research Category

Grant-in-Aid for Scientific Research (A)

Allocation TypeSingle-year Grants
Section一般
Research Field Electron device/Electronic equipment
Research InstitutionJapan Advanced Institute of Science and Technology

Principal Investigator

水田 博  北陸先端科学技術大学院大学, マテリアルサイエンス研究科, 教授(移行) (90372458)

Project Period (FY) 2013-04-01 – 2014-03-31
Project Status Discontinued (Fiscal Year 2013)
Budget Amount *help
¥26,650,000 (Direct Cost: ¥20,500,000、Indirect Cost: ¥6,150,000)
Fiscal Year 2013: ¥26,650,000 (Direct Cost: ¥20,500,000、Indirect Cost: ¥6,150,000)
Keywords先端機能デバイス / マイクロ・ナノデバイス / スマートセンサ情報システム / マイクロマシン / ナノ材料
Research Abstract

複合集積NEMSセンサー・パワーマネジメント素子技術と、グラフェンナノデバイス技術を融合させて、①少数吸着分子によるダルトンレベル質量変化検出と電荷移動検出を可能とする振動チャネル型グラフェンナノリボン(GNR)トランジスタの設計・作製と評価(タスク【T1】)、②GNR-基板間の短距離力を設計・制御して、エネルギー可逆型NEMSスイッチを可能とする不揮発性グラフェン・パワーマネジメント素子の設計・作製と評価(タスク【T2】)、③アトムスケールから等価回路解析レベルまでをカバーする集積モノレイヤーセンサーシステム設計・解析用マルチスケール・シミュレーション技術の構築と、原子分解能走査透過型電子顕微鏡を駆使したGNR上分子吸着状態の微視的解明(タスク【T3】)、を推進した。
タスク【T1】では、サスペンデッドGNRをOut-of-plane型振動チャネルとして用いる共鳴チャネル型GNRトランジスタ構造(RCGFET)を採用し、3次元有限要素解析と第一原理計算を併用したシミュレーションを用いて、RCGFETの質量感度SのGNRの寸法・形状依存性を明らかにした。タスク【T2】では、対局する片持ちグラフェンカンチレバーを可動チャネルとする新奇な不揮発型3端子グラフェンNEMSスイッチを考案し、3次元有限要素解析を用いて、そのプル・イン電圧、プル・アウト電圧の基本設計を行った。タスク【T3】では、機械的剥離法とCVD法により作成したグラフェン薄膜をTEMグリッド上に転写したサンプルに対して、ヘリウムイオンビーム照射量を変化させた際の原子構造変化を、高解像度TEMで直接観察することに成功した。

Current Status of Research Progress
Reason

25年度が最終年度であるため、記入しない。

Strategy for Future Research Activity

25年度が最終年度であるため、記入しない。

Report

(1 results)
  • 2013 Annual Research Report
  • Research Products

    (14 results)

All 2013

All Journal Article (1 results) (of which Peer Reviewed: 1 results) Presentation (13 results) (of which Invited: 3 results)

  • [Journal Article] Point defect-induced transport gap widening in the downscaled graphene nanoribbon device2013

    • Author(s)
      Manoharan M. and Hiroshi Mizuta
    • Journal Title

      Carbon

      Volume: 64 Pages: 416-423

    • DOI

      10.1016/j.carbon.2013.07.094

    • Related Report
      2013 Annual Research Report
    • Peer Reviewed
  • [Presentation] He+ ion beam based nanofabrication and characterization of downscaled graphene nanodevices2013

    • Author(s)
      H. Mizuta, S. Hang, N. Kalhor, S. A. Boden and Manoharan M., Z. Moktadir
    • Organizer
      II Bilateral Italy-Japan Seminar Silicon nanoelectronics for advanced application
    • Place of Presentation
      Lago Garda, Italy
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Study of carrier transport for graphene nanoribbons with He+ ion induced point defects and edge irregularities2013

    • Author(s)
      H. Mizuta, Z. Motadir, S. Hang, N. Kalhor, J. Reynolds, K. Higashimine, Manoharan M.
    • Organizer
      15th International Symposium on “Ultrafast Phenomena in Semiconductors” (15-UFPS)
    • Place of Presentation
      Vilnius, Lithuania
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Helium ion beam based novel fabrication of downscaled graphene nanodevices2013

    • Author(s)
      H. Mizuta, Z. Motadir, S. Hang, N. Kalhor, J. Reynolds, T. Iwasaki, M. Schmidt, Manoharan M.
    • Organizer
      The 15th Takayanagi Kenjiro Memorial Sympojium
    • Place of Presentation
      Shizuoka University
    • Related Report
      2013 Annual Research Report
    • Invited
  • [Presentation] Fabrication of Graphene Double Quantum Dot Devices by He-ion Beam Milling2013

    • Author(s)
      N. Kalhor, S. A. Boden, S. Hang, Z. Moktadir and H. Mizuta
    • Organizer
      Imaginenano Graphene 2013
    • Place of Presentation
      Bilbao, Spain
    • Related Report
      2013 Annual Research Report
  • [Presentation] Catalyst free PECVD nanocrystalline graphene on insulator2013

    • Author(s)
      Z. H. A. Hamid, C. Xu, M. E. Schmidt, H. Mizuta, M. Cooke and H. M. H. Chong
    • Organizer
      Imaginenano Graphene 2013
    • Place of Presentation
      Bilbao, Spain
    • Related Report
      2013 Annual Research Report
  • [Presentation] Ultra-fine Graphene Nanoelectronic Devices Carved with Tightly Focused Helium Ion Beam2013

    • Author(s)
      S. Hang, Z. Moktadir and H. Mizuta
    • Organizer
      Graphene Week 2013
    • Place of Presentation
      Chemniz, Germany
    • Related Report
      2013 Annual Research Report
  • [Presentation] Sharp edged sub-20 nm graphene single-electron devices by Helium ion beam milling technique2013

    • Author(s)
      N. Kalhor, S. Hang, T. Iwasaki, Z. Moktadir, S. Boden, Manoharan M. and H. Mizuta
    • Organizer
      2013 JSAP-MRS Joint Symposia, Symposium C: Advanced Nano Carbon Devices and Materials
    • Place of Presentation
      Doshisha University, Kyoto
    • Related Report
      2013 Annual Research Report
  • [Presentation] Predominant role of the point defects in armchair graphene nanoribbon devices2013

    • Author(s)
      Manoharan M. and H. Mizuta
    • Organizer
      2013 JSAP-MRS Joint Symposia, Symposium C: Advanced Nano Carbon Devices
    • Place of Presentation
      Doshisha University, Kyoto
    • Related Report
      2013 Annual Research Report
  • [Presentation] Adsorption of CO2 and NH3 molecules on armchair graphene nanoribbons and its electronic states and transport properties2013

    • Author(s)
      Manoharan M., S. Inoue and H. Mizuta
    • Organizer
      2013 JSAP-MRS Joint Symposia, Symposium C: Advanced Nano Carbon Devices
    • Place of Presentation
      Doshisha University, Kyoto
    • Related Report
      2013 Annual Research Report
  • [Presentation] Uniformity of large area plasma-enhanced chemical vapor deposited nanocrystalline graphene2013

    • Author(s)
      M. E. Schmidt, C. Xu, M. Cooke, H. Mizuta and H. M. H. Chong
    • Organizer
      2013 JSAP-MRS Joint Symposia, Symposium C: Advanced Nano Carbon Devices
    • Place of Presentation
      Doshisha University, Kyoto
    • Related Report
      2013 Annual Research Report
  • [Presentation] Metal-Insulating transition in disordered graphene nanoribbons controlled by helium ion irradiation2013

    • Author(s)
      Z. Moktadir, S. Hang, J. Reynolds, K. Higashimine, M. Manoharan and H. Mizuta
    • Organizer
      2013 International Conference on Solid State Devices and Materials (SSDM2013)
    • Place of Presentation
      Hilton Fukuoka Sea Hawk, Fukuoka
    • Related Report
      2013 Annual Research Report
  • [Presentation] Role of the edge states and the point defects on electronic transport in bilayer graphene field effect transistors2013

    • Author(s)
      Z. Motadir, S. Hang, S. Saito and H. Mizuta
    • Organizer
      2013 JSAP-MRS Joint Symposia, Symposium C: Advanced Nano Carbon Devices and Materials
    • Place of Presentation
      Doshisha University, Kyoto
    • Related Report
      2013 Annual Research Report
  • [Presentation] Metal-Insulating transition in disordered graphene nanoribbons controlled by helium ion irradiation2013

    • Author(s)
      Z. Moktadir, S. Hang, J. Reynolds, K. Higashimine, M. Manoharan and H. Mizuta
    • Organizer
      5th International Conference on Recent Progress in Graphene Research
    • Place of Presentation
      Tokyo Institute of Technology, Tokyo
    • Related Report
      2013 Annual Research Report

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Published: 2013-05-15   Modified: 2019-07-29  

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