Dynamic micro-plasma excited AlGaN high power DUV light emitter operated at around 10W class power

• Project/Area Number: 25249053
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: Ritsumeikan University
• Principal Investigator: Aoyagi Yoshinobu 立命館大学, 総合科学技術研究機構, 上席研究員 (70087469)
• Co-Investigator(Kenkyū-buntansha): KUROSE Noriko 立命館大学, 総合科学技術研究機構, 研究員 (50520540) ; KAMIYA Itaru 豊田工業大学, 工学(系)研究科, 教授 (10374018) ; KAMIKO Noyuki 立命館大学, 理工学部, 教授 (70251345) ; ARAKI Tsutomu 立命館大学, 理工学部, 教授 (20312126)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥45,240,000 (Direct Cost: ¥34,800,000、Indirect Cost: ¥10,440,000); Fiscal Year 2015: ¥10,790,000 (Direct Cost: ¥8,300,000、Indirect Cost: ¥2,490,000); Fiscal Year 2014: ¥14,040,000 (Direct Cost: ¥10,800,000、Indirect Cost: ¥3,240,000); Fiscal Year 2013: ¥20,410,000 (Direct Cost: ¥15,700,000、Indirect Cost: ¥4,710,000)
• Keywords: 深紫外発光素子 / MIPE / 大面積発光素子 / 高出力発光素子 / Si基板 / LED / マイクロプラズマ / AlGaN / プラズマ励起 / 深紫外光源 / 大面積 / 波長可変 / 紫外線殺菌 / 紫外線分解

Outline of Final Research Achievements

Purpose of this research is to realize a micro-plasma-excited deep ultraviolet light emitting device (MIPE) with large scale and high power operated at short DUV wavelengths. We have developed a new type MIPE with ignition-ready to realize stable operation of the MIPE emission. We have succeeded in developing the MIPE with MgO emitter operated at the wavelength region of 190～250nm. Using these technologies we have developed 20x10cm large size standing free MIPE which is the largest size DUV light emitter around the world. The power was about 1W at 242nm using MgO emitter. By arranging 8 panels we can realize 10W class MIPE which can be used for application toward laminar flow type water purification system and large size curing system

Research Products

• [Journal Article] マイクロプラズマ励起深紫外発光素子の開発と深紫外線の医療応用 (2015)
  • Author(s): 黒瀬範子、青柳克信
  • Journal Title: レーザー学会誌 Volume: ４3 Pages: 677-682
  • NAID: 130007957139
  • Peer Reviewed
• [Journal Article] Development of High Power, Large Area, Deep Ultraviolet Light Emitting Device using Dynamic Micro-plasma Excitation of AlGaN Multi-quantum Wells (MIPE) (2014)
  • Author(s): 黒瀬範子、青柳克信
  • Journal Title: IEEJ Transactions on Fundamentals and Materials Volume: 134 Issue: 5 Pages: 307-314
  • DOI: 10.1541/ieejfms.134.307
  • NAID: 130004869362
  • ISSN: 0385-4205, 1347-5533
  • Peer Reviewed
• [Journal Article] Formation of conductive spontaneous via holes in AlN buffer layer on n+Si substrate by filling the vias with n-AlGaN by metal organic chemical vapor deposition and application to vertical deep ultraviolet photo-sensor (2014)
  • Author(s): Noriko Kurose, Naotaka Iwata, Itaru Kamiya, Yoshinobu Aoyagi
  • Journal Title: AIP ADVANCES Volume: 4 Issue: 12 Pages: 1230071-1230077
  • DOI: 10.1063/1.4905135
  • Peer Reviewed / Open Access
• [Journal Article] Development of substrate-removal-free vertical ultraviolet light-emitting diode (RefV-LED) (2014)
  • Author(s): N. Kurose, K. Shibano, T. Araki, Y. Aoyagi
  • Journal Title: AIP advances Volume: 4 Issue: 2 Pages: 02712211-6
  • DOI: 10.1063/1.4867090
  • Peer Reviewed
• [Presentation] Realization of conductive AlN buffer layer using spontaneous nano-size via-holes and its application to vertical AlGaN devices on Si substrate (2016)
  • Author(s): N. Kurose
  • Organizer: Energy Materials and Nanotechnology Collaborative Conference on Crystal Growth
  • Place of Presentation: San Sebastian, Spain
  • Year and Date: 2016-09-09
  • Int'l Joint Research / Invited
• [Presentation] Realization of Conductive AlN Epitaxial layer on Si substrate Using Spontaneous Nano Via Holes for Vertical AlGaN High Power FET (2016)
  • Author(s): N. Kurose
  • Organizer: Compound Semiconductor Workshop
  • Place of Presentation: 富山国際会議場（富山県 富山市）
  • Year and Date: 2016-07-10
  • Int'l Joint Research
• [Presentation] Fabrication of nonlinear photonic crystal and its application to UV laser (2015)
  • Author(s): Y. Aoyagi, N. Kurose and S. Inoue
  • Organizer: International Display Workshop 2015
  • Place of Presentation: 大津プリンスホテル（滋賀県 大津市）
  • Year and Date: 2015-12-10
  • Int'l Joint Research / Invited
• [Presentation] Realization of high performance of organic devices by nanoscale control of surface and interface (2015)
  • Author(s): Y. Aoyagi
  • Organizer: The 9th International Nanotechnology/MEMS Seminar
  • Place of Presentation: 静岡大学（静岡県 浜松市）
  • Year and Date: 2015-12-08
  • Int'l Joint Research / Invited
• [Presentation] A new technique to make an insulating AlN thin film to be conductive by spontaneous via holes formed by MOCVD and its application to realize vertical UVLED on N+Si substrate (2015)
  • Author(s): N. Kurose, Y. Aoyagi
  • Organizer: AVS international conference
  • Place of Presentation: SanJose, USA
  • Year and Date: 2015-10-22
  • Int'l Joint Research
• [Presentation] Development of new type vertical deep ultra-violet light emitting Device（RefV-LED） (2014)
  • Author(s): N.Kurose, Y.Aoyagi
  • Organizer: The 21th International Display Workshops
  • Place of Presentation: 朱鷺メッセ、新潟コンベンションセンター（新潟県、新潟市）
  • Year and Date: 2014-12-04
  • Invited
• [Presentation] Novel Vertical AlGaN Deep Ultra Violet Photo-detector on n+Si Substrate using Spontaneous Via Holes Growth Technique (2014)
  • Author(s): Kota Ozeki, Noriko Kurose, Naotaka Iwata*, Kentaro Shibano, Tsutomu Araki, Itaru Kamiya* and Yoshinobu Aoyagi
  • Organizer: Solid State Device and Materials
  • Place of Presentation: 筑波国際会議場 （茨城県、つくば市）
  • Year and Date: 2014-09-11
• [Presentation] Formation of High Conductive n-AlN using Spontaneous Via Holes and Development of Substrate-removal-free Vertical DUV LED (RefV-LED) (2014)
  • Author(s): N.Kurose, Y.Aoyagi
  • Organizer: 5th International Symposium on Growth of III-Nitrides
  • Place of Presentation: Atlanta, U.S.A
  • Year and Date: 2014-05-20
• [Presentation] Deep UV Light Emitter by Nonlinear Photonic Crystal and AlGaN Semiconductors
  • Author(s): N. Kurose, Y. Aoyagi
  • Organizer: Laserion 2013,
  • Place of Presentation: Munich, Germany
  • Invited
• [Presentation] Development of substrate-removal-free vertical deep ultraviolet light emitting diode using AlGaN semiconductors on Si(111) substrate (Ref-V-DUVLED)
  • Author(s): N. Kurose, Y. Aoyagi, K. Shibano, T. Araki, Y. Aoyagi
  • Organizer: Material Research Society
  • Place of Presentation: Boston, USA
• [Presentation] マイクロプラズマ励起深紫外発光素子(MIPE)の開発と応用
  • Author(s): 黒瀬範子、青柳克信
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学、京都
• [Presentation] Si上縦型深紫外LEDの開発と応用
  • Author(s): 柴野謙太朗、黒瀬範子、荒木努、青柳克信
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学、京都
• [Presentation] n-Si基板上縦型深紫外LED （Ref-V DUV LED)の開発（２）
  • Author(s): 柴野謙太朗、黒瀬範子、荒木努、青柳克信
  • Organizer: 第61回応用物理学会春期学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス、神奈川
• [Patent(Industrial Property Rights)] 導電性を有する絶縁体層およびその製造方法並びに窒化物半導体素子およびその製造方法 (2014)
  • Inventor(s): 青柳克信、黒瀬範子
  • Industrial Property Rights Holder: 学校法人立命館
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2014-051186
  • Filing Date: 2014-03-14
• [Patent(Industrial Property Rights)] 縦型発光ダイオードおよび結晶成長法 (2013)
  • Inventor(s): 青柳克信、黒瀬範子、柴野謙太朗、荒木努
  • Industrial Property Rights Holder: 学校法人立命館
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-128015
  • Filing Date: 2013-06-18
• [Patent(Industrial Property Rights)] 深紫外発光素子 (2013)
  • Inventor(s): 青柳克信、黒瀬範子
  • Industrial Property Rights Holder: 学校法人立命館
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2013-241850
  • Filing Date: 2013-11-22