Development of new diamond electron device using huge polarization charge

• Project/Area Number: 25249054
• Research Category: Grant-in-Aid for Scientific Research (A)
• Allocation Type: Single-year Grants
• Section: 一般
• Research Field: Electron device/Electronic equipment
• Research Institution: National Institute for Materials Science
• Principal Investigator: Koide Yasuo 国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 部門長/理事 (70195650)
• Co-Investigator(Kenkyū-buntansha): 廖 梅勇 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドバンドギャップ機能材料グループ, 主幹研究員 (70528950) ; 井村 将隆 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドバンドギャップ機能材料グループ, 主任研究員 (80465971)
• Co-Investigator(Renkei-kenkyūsha): TSUYA DAIJU 物質・材料研究機構, 技術開発・共用部門・ナノテクノロジー融合ステーション, 主任エンジニア (10469760)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥45,240,000 (Direct Cost: ¥34,800,000、Indirect Cost: ¥10,440,000); Fiscal Year 2016: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000); Fiscal Year 2015: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000); Fiscal Year 2014: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000); Fiscal Year 2013: ¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
• Keywords: ダイヤモンド / 電界効果トランジスタ / 酸化物 / 酸化物界面 / 微細構造解析 / ２次元正孔伝導 / 水素終端表面 / 論理回路 / ゲート酸化膜 / 強誘電体 / 窒化アルミニウム / ＩＩＩ族窒化物 / ノーマリオフ動作 / 分極 / 酸化物ゲート / 窒化物ゲート / 高誘電ゲート / 異種接合 / 誘電体 / ゲート絶縁膜 / 誘電率 / 原子層堆積法

Outline of Final Research Achievements

The purpose this research was development of high-performance diamond field-effect transistor (FET) in order to use an advantage of high-density hole carriers in surface conductive layer. The logic circuit chip of diamond was successfully developed for the first time by developing processes to fabricate normally-on/off mode FETs and controlling the positive and negative charge density in the stack gate oxide. In addition, the excellent AlN/diamond heterojunciton FET with drain current same as those of the stack oxide gate FETs was developed by understanding the transport mechanism of p-type channel based on the microstructure analysis and the transfer doping model.

Research Products

• [Journal Article] Effect of off-cut angle of hydrogen-terminated diamond(111) substrate on the quality of AlN towards high-density AlN/diamond(111) interface hole channel (2017)
  • Author(s): Masataka Imura, Ryan G. Banal, Meiyong Liao, Jiangwei Liu, Takashi Aizawa, Akihiro Tanaka, Hideo Iwai, Takaaki Mano, and Yasuo Koide
  • Journal Title: J. Appl. Phys. Volume: 121 Issue: 2 Pages: 025702-025702
  • DOI: 10.1063/1.4972979
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Nanometer-thin ALD-Al2O3 for the improvement of structural quality of AlN grown on sapphire substrate by MOVPE (2016)
  • Author(s): Ryan G. Banal, Masataka Imura,1, Daiju Tsuya, Hideo Iwai, and Yasuo Koide
  • Journal Title: Phys. Status Solidi A Volume: 217 Issue: 2 Pages: 1600727-1600727
  • DOI: 10.1002/pssa.201600727
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Design and fabrication of highperformance diamond triple-gate field-effect transistors (2016)
  • Author(s): Jiangwei Liu, Hirotaka Ohsato, Xi Wang, Meiyong Liao, and Yasuo Koide
  • Journal Title: Sci. Reprots Volume: 6 Issue: 1 Pages: 34757-34757
  • DOI: 10.1038/srep34757
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Structural properties and transfer characteristics of sputter deposition AlN and atomic layer deposition Al2O3 bilayer gate materials for H-terminated diamond field effect transistors (2016)
  • Author(s): Ryan G. Banal, Masataka Imura, Jiangwei Liu, and Yasuo Koide,
  • Journal Title: J. Appl. Phys. Volume: 120 Issue: 11 Pages: 115307-115307
  • DOI: 10.1063/1.4962854
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] High-k ZrO2/Al2O3 bilayer on hydrogenated diamond: Band configuration, breakdown field, and electrical properties of field-effect transistors (2016)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, and Y.Koide
  • Journal Title: J. Appl. Phys. Volume: 120 Issue: 12 Pages: 124504-124504
  • DOI: 10.1063/1.4962851
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Control of normally on/off characteristics in hydrogenated diamond metal-insulator-semiconductor field-effect transistors (2015)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, T. Matsumoto, N. Shibata, Y. Ikuhara, and Y. Koide
  • Journal Title: Journal of Applied Physics Volume: 118 Issue: 11 Pages: 1157041-6
  • DOI: 10.1063/1.4930294
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Impedance analysis of Al2O3/H-terminated diamond MOS structures (2015)
  • Author(s): M.Y. Liao, J.W. Liu, L. W. Sang. D. Coatchup, J. L. Li, M. Imura, Y. Koide, H. Ye
  • Journal Title: Appl.Phys. Lett Volume: 106 Issue: 8 Pages: 083506-083506
  • DOI: 10.1063/1.4913597
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Electrical properties of atomic layer deposited HfO2/Al2O3 multilayer on diamond (2015)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
  • Journal Title: Diamond and Related Materials Volume: 54 Pages: 55-58
  • DOI: 10.1016/j.diamond.2014.10.004
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Low on-resistance diamond field effect transistor with high-k ZrO2 as dielectric (2014)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, A. Tanaka, H. Iwai, and Y. Koide
  • Journal Title: Scientific Reports Volume: 4 Issue: 1 Pages: 6395-1
  • DOI: 10.1038/srep06395
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Diamond logic inverter with enhancement-mode metal-insulator-semiconductor field effect transistor (2014)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, E. Watanabe, H. Oosato, and Y. Koide
  • Journal Title: Applied Physics Letters Volume: 105 Issue: 8 Pages: 082110-14
  • DOI: 10.1063/1.4894291
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Doping and interface of homoepitaxial diamond for electroc applications (2014)
  • Author(s): S. Yamazaki, E. Gheeraert, and Y. Koide
  • Journal Title: MRS Bulletiin Volume: 39 Issue: 6 Pages: 499-499
  • DOI: 10.1557/mrs.2014.100
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Diamond field effect transistors with a high-dielectric constant Ta2O5 as gate material (2014)
  • Author(s): J. Liu, L. Meiyong, M. Imura, E. Watanabe, H. Oosato, Y. Koide
  • Journal Title: J. Phys. D: Appl. Phys. Volume: 47 Pages: 245102-1
  • DOI: 10.1016/j.diamond.2013.06.005
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Electrical characteristics of hydrogen-terminated diamond metal-oxide-semiconductor with atomic layer deposited HfO2 as gate dielectric (2013)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, and Y. Koide
  • Journal Title: Applied Physics Letters Volume: 102 Issue: 11 Pages: 1129101-4
  • DOI: 10.1063/1.4798289
  • Peer Reviewed
• [Journal Article] Interfacial chemical bonding state and band alignment of CaF /hydrogen-terminated diamond heterojunction (2013)
  • Author(s): J. W. Liu, M. Y. Liao, S. H. Cheng, M. Imura, and Y. Koide
  • Journal Title: Journal of Applied Physics Volume: 113 Issue: 12 Pages: 1237061-6
  • DOI: 10.1063/1.4798366
  • Peer Reviewed
• [Journal Article] Interfacial band configuration and electrical properties of LaAlO3/Al2O3/hydrogenated-diamond metal-oxide-semiconductor field effect transistors (2013)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, H. Oosato, E. Watanabe, A. Tanaka, H. Iwai, and Y. Koide
  • Journal Title: J. Appl. Phys. Volume: 114 Issue: 8 Pages: 841081-7
  • DOI: 10.1063/1.4819108
  • Peer Reviewed
• [Journal Article] Normally-off HfO2-gated diamond field effect transistors (2013)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Journal Title: Appl. Phys. Lett. Volume: 103 Issue: 9 Pages: 929051-3
  • DOI: 10.1063/1.4820143
  • Peer Reviewed
• [Journal Article] ダイヤモンドを用いた光・電子デバイスの開発 (2013)
  • Author(s): 小出 康夫，廖 梅勇，井村 将隆
  • Journal Title: スマートプロセス学会誌 Volume: 第2巻 Pages: 224-229
  • NAID: 10031200069
  • Peer Reviewed
• [Journal Article] ＡｌＮ／ダイヤモンドヘテロ接合ＦＥＴとＭＥＭＳスイッチ (2013)
  • Author(s): 小出 康夫，廖 梅勇，井村 将隆
  • Journal Title: 応用電子物性分科会誌 Volume: 第19巻 Pages: 7-13
• [Presentation] Sputter deposition AlN and atomic layer deposition Al2O3 as bilayer gate materials for Hterminated diamond field effect transistors (2016)
  • Author(s): R.G. Banal, M. Imura, J. Liu, M. Liao, and Y.Koide
  • Organizer: International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
  • Place of Presentation: Montpelier, France
  • Year and Date: 2016-09-04
  • Int'l Joint Research
• [Presentation] Wide Bandgap III-Nitride and Diamond Materials and Devices (2016)
  • Author(s): Y. Koide
  • Organizer: 9th Pacific Rim International Conference on Advanced Materials and Processing (PRICM9)
  • Place of Presentation: Kyoto, Japan
  • Year and Date: 2016-08-01
  • Int'l Joint Research / Invited
• [Presentation] Wide Bandgap III-Nitride and Diamond Materials and Devices (2016)
  • Author(s): Y. Koide
  • Organizer: 10th International Conference on New Diamond and Nano Carbons (NDNC2016)
  • Place of Presentation: Xi'an, China
  • Year and Date: 2016-05-22
  • Int'l Joint Research / Invited
• [Presentation] Microstructure and hole accumulation mechanism of AlN/Diamond(111) heterojunctions prepared by MOVPE, (2016)
  • Author(s): M. Imura, R.G. Banal, M.Y. Liao, J. Liu, Y.Koide , T. Matsumoto, N. Shibata, Y. Ikuhara
  • Organizer: International Conference on Diamond and Carbon Materials 2016 (ICDCM 2016)
  • Place of Presentation: Montpelier, France
  • Int'l Joint Research
• [Presentation] Diamond MOSFETs with high-k gate oxides (2015)
  • Author(s): Y. Koide
  • Organizer: 2015 MRS Fall Meeting, Symposium DD, Electronic Devices II
  • Place of Presentation: Boston, USA
  • Year and Date: 2015-11-30
  • Int'l Joint Research / Invited
• [Presentation] Diamond Field Effect Transisot, Deep-UV sensor, and MEMS Devices (2015)
  • Author(s): Y. Koide
  • Organizer: 2015 Collaborative Conference on 3D & Materials Research
  • Place of Presentation: Busan, South Korea
  • Year and Date: 2015-06-15
  • Int'l Joint Research / Invited
• [Presentation] III-Nitrides and Diamond Devices (2015)
  • Author(s): Y. Koide
  • Organizer: 2015 International Symposium on Single Crystal Diamond and Electronics (2015 SCDE)
  • Place of Presentation: Xi'an, Chaina
  • Year and Date: 2015-06-12
  • Int'l Joint Research / Invited
• [Presentation] H-Diamond MOSFETs with high-k oxide gate (2015)
  • Author(s): Y. Koide
  • Organizer: 3rd French-Japanese Workshop on Diamond Power Devices
  • Place of Presentation: Niems France
  • Year and Date: 2015-06-07
  • Int'l Joint Research / Invited
• [Presentation] E and D-modes Diamond MOSFETs (2015)
  • Author(s): Y. Koide
  • Organizer: OMNT, International Symposium on Diamond, Elavolation, Devices and Applications.
  • Place of Presentation: Grenoble France
  • Year and Date: 2015-06-06
  • Int'l Joint Research / Invited
• [Presentation] High-k Oxide Gate Diamond FETs (2015)
  • Author(s): Y. Koide
  • Organizer: 2015 MRS Spring Meeting, Session CC
  • Place of Presentation: SanFrancisco, USA
  • Year and Date: 2015-04-06
  • Int'l Joint Research / Invited
• [Presentation] Diamond Electronic Devices for Future Application (2014)
  • Author(s): Y. Koide
  • Organizer: 2014 Asia-Pacific Microwave Conference (APMC 2014)
  • Place of Presentation: Sendai, Japan
  • Year and Date: 2014-11-04
  • Int'l Joint Research / Invited
• [Presentation] Diamond FETs using heterojunction and high-k dielectrics (2014)
  • Author(s): Y. Koide
  • Organizer: European Microwave Integrated Circuit Conferece (EUMIC 2014)
  • Place of Presentation: Rome, Italy
  • Year and Date: 2014-10-05
  • Int'l Joint Research / Invited
• [Presentation] Diamond FETs with high-k oxide gate dielectrics (2014)
  • Author(s): Y. Koide
  • Organizer: International Conference on Diamond and Carbon Materials (ICDCM 2014)
  • Place of Presentation: Madrid, Spain
  • Year and Date: 2014-09-08
  • Int'l Joint Research / Invited
• [Presentation] Diamond Field Effect Transistors with high-k gate insulator (2014)
  • Author(s): Y. Koide
  • Organizer: International Materials Research Congress (IMRC 2014)
  • Place of Presentation: Cancun, Mexico
  • Year and Date: 2014-08-17
  • Int'l Joint Research / Invited
• [Presentation] Diamond Electronic and Photonic Devices (2014)
  • Author(s): Y. Koide
  • Organizer: 2014 International Symposium on Single Crystal Diamond Electronics and Fourt Chinese Vacuum Forum (SCDE 2014)
  • Place of Presentation: Xi'an, China
  • Year and Date: 2014-06-12
  • Int'l Joint Research / Invited
• [Presentation] Interfacial electronic band alignment of Ta2O5/hydrogen-terminated diamond heterojunction determined by X-ray photoelectron spectroscopy (2013)
  • Author(s): J. W. Liu, S. H. Cheng, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: New Diamond and Nano Carbons Conference (NDNC 2013)
  • Place of Presentation: Novotel Singapore Clarke Quay, Singapole
• [Presentation] Band configuration of HfO2/hydrogen-terminated diamond heterointerface correlated with electrical properties of metal/HfO2/hydrogen-terminated diamond diodes (2013)
  • Author(s): J. W. Liu, M. Y. Liao, M. Imura, and Y. Koide
  • Organizer: New Diamond and Nano Carbons Conference (NDNC 2013)
  • Place of Presentation: Novotel Singapore Clarke Quay, Singapole
• [Presentation] Challenge to DevelopDiamond Electronic and Photonic Devices for Energy Saving, (2013)
  • Author(s): Y. Koide
  • Organizer: The 4th International Symposium on Organic and Inorganic Electronic Materials and Related Nanotechnologies (EM-NANO 2013)
  • Place of Presentation: Kanazawa, Japan
  • Invited
• [Presentation] Diamond Heterojunction and High-k Dielectric Gate FETs (2013)
  • Author(s): Y. Koide
  • Organizer: The 1st French-Japanese workshop on diamond power devices,
  • Place of Presentation: Chanomix, France
  • Invited
• [Presentation] Challenge to Development of Diamond Power Devices for Saving Energy (2013)
  • Author(s): Y. Koide
  • Organizer: The 8th Pacific Rim International Congress on Materials and Processing (PRICM 8)
  • Place of Presentation: Waikoloa, Hawaii USA
  • Invited
• [Presentation] Diamond Field Effect Transistors using Al2O3 Insulator/Surface p-Channel Diamond Prepared by Thermal Treatment with Hydrogen and Ammonia Atmosphere (2013)
  • Author(s): M. Imura, H. Ohsato, E. Watanabe, D. Tsuya, J. Liu, M. Y. Liao, Y. Koide
  • Organizer: International Conference on Diamond and Carbon Materials 2013 (ICDCM 2013)
  • Place of Presentation: Riva del Garda, Italy
• [Presentation] Diamond heterojunction and high-k Dielectric FETs (2013)
  • Author(s): Y. Koide
  • Organizer: IEEE Nano Materials and Devices Conference (IEEE-NMDC 2013)
  • Place of Presentation: Tainan, Taiwan
  • Invited
• [Book] Study of Grain Boundary Character, Chapter 3 (2016)
  • Author(s): Ryan G. Banal, Masataka Imura and Yasuo Koide
  • Publisher: INTECH
• [Remarks] 小出康夫｜NIMS
  • URL: http://samurai.nims.go.jp/KOIDE_Yasuo-j.html
• [Remarks] NIMS研究者紹介
  • URL: http://samurai.nims.go.jp/KOIDE_Yasuo-j.html
• [Remarks] 小出康夫ホームページ
  • URL: http://homepage3.nifty.com/yankoide/
• [Patent(Industrial Property Rights)] ノーマリーオフ特性を有する水素化ダイヤモンドＭＩＳＦＥＴの製造方法 (2015)
  • Inventor(s): 劉江偉 小出康夫 リャオメイヨン 井村将隆
  • Industrial Property Rights Holder: 劉江偉 小出康夫 リャオメイヨン 井村将隆
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2015-174571
  • Filing Date: 2015-09-04