Development of new diamond electron device using huge polarization charge
| Project/Area Number |
25249054
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| Research Category |
Grant-in-Aid for Scientific Research (A)
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| Allocation Type | Single-year Grants |
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| Section | 一般 |
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| Research Field |
Electron device/Electronic equipment
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| Research Institution | National Institute for Materials Science |
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Principal Investigator |
Koide Yasuo 国立研究開発法人物質・材料研究機構, 技術開発・共用部門, 部門長/理事 (70195650)
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| Co-Investigator(Kenkyū-buntansha) |
廖 梅勇 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドバンドギャップ機能材料グループ, 主幹研究員 (70528950)
井村 将隆 国立研究開発法人物質・材料研究機構, 光・電子材料ユニットワイドバンドギャップ機能材料グループ, 主任研究員 (80465971)
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| Co-Investigator(Renkei-kenkyūsha) |
TSUYA DAIJU 物質・材料研究機構, 技術開発・共用部門・ナノテクノロジー融合ステーション, 主任エンジニア (10469760)
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥45,240,000 (Direct Cost: ¥34,800,000、Indirect Cost: ¥10,440,000)
Fiscal Year 2016: ¥6,370,000 (Direct Cost: ¥4,900,000、Indirect Cost: ¥1,470,000)
Fiscal Year 2015: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2014: ¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2013: ¥16,770,000 (Direct Cost: ¥12,900,000、Indirect Cost: ¥3,870,000)
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| Keywords | ダイヤモンド / 電界効果トランジスタ / 酸化物 / 酸化物界面 / 微細構造解析 / ２次元正孔伝導 / 水素終端表面 / 論理回路 / ゲート酸化膜 / 強誘電体 / 窒化アルミニウム / ＩＩＩ族窒化物 / ノーマリオフ動作 / 分極 / 酸化物ゲート / 窒化物ゲート / 高誘電ゲート / 異種接合 / 誘電体 / ゲート絶縁膜 / 誘電率 / 原子層堆積法 |
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| Outline of Final Research Achievements |
The purpose this research was development of high-performance diamond field-effect transistor (FET) in order to use an advantage of high-density hole carriers in surface conductive layer. The logic circuit chip of diamond was successfully developed for the first time by developing processes to fabricate normally-on/off mode FETs and controlling the positive and negative charge density in the stack gate oxide. In addition, the excellent AlN/diamond heterojunciton FET with drain current same as those of the stack oxide gate FETs was developed by understanding the transport mechanism of p-type channel based on the microstructure analysis and the transfer doping model.
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Report
(5 results)
Research Products
(45 results)
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[Presentation] E and D-modes Diamond MOSFETs2015
Author(s)
Y. Koide
Organizer
OMNT, International Symposium on Diamond, Elavolation, Devices and Applications.
Place of Presentation
Grenoble France
Year and Date
2015-06-06
Related Report
Int'l Joint Research / Invited
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