| Project/Area Number |
25286026
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nanomaterials engineering
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| Research Institution | Osaka University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
澤野 憲太郎 東京都市大学, 工学部, 准教授 (90409376)
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| Project Period (FY) |
2013-04-01 – 2017-03-31
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| Project Status |
Completed (Fiscal Year 2016)
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| Budget Amount *help |
¥19,630,000 (Direct Cost: ¥15,100,000、Indirect Cost: ¥4,530,000)
Fiscal Year 2015: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2014: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
Fiscal Year 2013: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
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| Keywords | ナノ材料・創製プロセス / シリコン / 熱電ナノ材料 / ナノドット / 熱電変換材料 / シリコン系材料 / MBE / ユギキタス元素 / 極薄Si酸化膜 / ドーピング技術 / ＭＢＥ / ユビキタス元素 / 極薄Ｓｉ酸化膜 |
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| Outline of Final Research Achievements |
The simultaneous control of the thermal conductivity and electrical conductivity has been difficult because of their correlation. However, this control is required for the development of the high performance thermoelectric materials. In this study, we developed the coherent nanostructures by stacking of epitaxial nanodots/Si layers, which can exhibit low thermal conductivity and high electrical conductivity. In the developed structures, nanodots played a role of the scattering bodies of phonon wave, leading to the drastic thermal conductivity reduction. On the other hand, by proper doping, the structures showed the bulk-like high electric mobility because nanodot interfaces do not prevent electron transport so much. As a result, we succeeded in the development of the Si-based nanostructures with high electrical conductivity and low thermal conductivity, bringing out the possibility of the realization of high performance Si-based thermoelectric materials.
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