| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2015: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2014: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2013: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
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| Outline of Final Research Achievements |
In this study, PZT family monocrystalline thin films with the ideal orientation were epitaxially grown on a Si substrate. The deposition method is sputtering, and by a fast cooling method, the ideal polarization, i.e. c-axis polarization of tetragonal crystal, has been first realized on a Si substrate. As a result, we obtained excellent characteristics for applications such as high piezoelectric constant, low dielectric constant, very large figure of merit derived from them and Curie point significantly higher than that of the bulk. A metal buffer layer with low resistivity was also successfully deposited. In addition, MEMS structures were fabricated using the deposited PZT family monocrystalline thin films to confirm that they were free from process damages.
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