Deposition of Ideally-oriented PZT Monocrystalline Thin Film on Si Substrate and Feasibility Study of Its Application to MEMS
| Project/Area Number |
25286033
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Nano/Microsystems
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| Research Institution | Tohoku University |
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Principal Investigator |
Tanaka Shuji 東北大学, 工学(系)研究科(研究院), 教授 (00312611)
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| Co-Investigator(Kenkyū-buntansha) |
YOSHIDA Shinya 東北大学, 大学院工学研究科, 特任准教授 (30509691)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥18,850,000 (Direct Cost: ¥14,500,000、Indirect Cost: ¥4,350,000)
Fiscal Year 2015: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2014: ¥7,020,000 (Direct Cost: ¥5,400,000、Indirect Cost: ¥1,620,000)
Fiscal Year 2013: ¥4,810,000 (Direct Cost: ¥3,700,000、Indirect Cost: ¥1,110,000)
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| Keywords | PZT / エピタキシャル成長 / 単結晶圧電薄膜 / 急冷法 / 誘電率 / MEMS / 圧電薄膜 / バッファ層 / キュリー点 / スパッタリング / チタン酸ジルコン酸鉛 / スパッタ成膜 / 単結晶膜 / シリコン基板 / 圧電定数 |
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| Outline of Final Research Achievements |
In this study, PZT family monocrystalline thin films with the ideal orientation were epitaxially grown on a Si substrate. The deposition method is sputtering, and by a fast cooling method, the ideal polarization, i.e. c-axis polarization of tetragonal crystal, has been first realized on a Si substrate. As a result, we obtained excellent characteristics for applications such as high piezoelectric constant, low dielectric constant, very large figure of merit derived from them and Curie point significantly higher than that of the bulk. A metal buffer layer with low resistivity was also successfully deposited. In addition, MEMS structures were fabricated using the deposited PZT family monocrystalline thin films to confirm that they were free from process damages.
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Report
(4 results)
Research Products
(16 results)
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[Presentation] MEMSの最新動向と圧電応用2015
Author(s)
田中秀治
Organizer
第153回電子セラミック・プロセス研究会
Place of Presentation
横浜, 横浜港湾福利厚生協会波止場会館
Year and Date
2015-10-17
Related Report
Invited
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[Presentation] K. Wasa, H. Hanzawa, S. Yoshida, S. Tanaka, H. Adachi, T. Matsunaga, Structure and Ferroelectric Properties of High TcBi(Me)O3-PbTiO3 Single Crystal Thin Films2015
Author(s)
K. Wasa, H. Hanzawa, S. Yoshida, S. Tanaka, H. Adachi, T. Matsunaga
Organizer
IEEE International Symposium on Applications of Ferroelectric (ISAF)
Place of Presentation
Singapore
Year and Date
2015-05-24
Related Report
Int'l Joint Research
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