Development of defect reduction method for a lattice-matched III-V-N / Si laser monolithically integrated on Si-chip
Project/Area Number |
25286049
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Crystal engineering
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Research Institution | Toyohashi University of Technology |
Principal Investigator |
WAKAHARA Akihiro 豊橋技術科学大学, 工学(系)研究科(研究院), 教授 (00230912)
|
Project Period (FY) |
2013-04-01 – 2016-03-31
|
Project Status |
Completed (Fiscal Year 2015)
|
Budget Amount *help |
¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2014: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2013: ¥14,170,000 (Direct Cost: ¥10,900,000、Indirect Cost: ¥3,270,000)
|
Keywords | 結晶成長機構 / III-V-N混晶 / 表面超構造 / 組成不均一 / Si上ヘテロエピタキシー / 欠陥制御 / 価電子制御 / Si上ヘテロエピタキシャル成長 / III-V-N / 無転位 / ドーピング制御 / ヘテロエピタキシー / Si基板 / 分子線エピタキシー / 組成不均一性制御 / 非輻射再結合中心 / 組成揺らぎ |
Outline of Final Research Achievements |
In order to realize a laser composed of III-V-N alloy lattice-matched to Si, it was examined the potential of surface nitridation method, in which partially surface nitridation and regrowth are alternates, to overcome reduction of nitrogen incorporation efficiency at high-temperature and/or generation of non-radiative recombination centers in GaAsN active and GaAsPN cladding layers. During the surface nitridation, both maintaining the (1x4) surface reconstruction and high-temperature growth (>550°C) are very effective to reduce the non-radiative centers. Also, high-quality GaAsPN cladding layer can be obtain by the use of As2 and P2 as the group-V sources, low V/III ratio (<4), and relatively high-temperature(>550°C).
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Report
(4 results)
Research Products
(17 results)