| Budget Amount *help |
¥19,240,000 (Direct Cost: ¥14,800,000、Indirect Cost: ¥4,440,000)
Fiscal Year 2015: ¥2,600,000 (Direct Cost: ¥2,000,000、Indirect Cost: ¥600,000)
Fiscal Year 2014: ¥2,470,000 (Direct Cost: ¥1,900,000、Indirect Cost: ¥570,000)
Fiscal Year 2013: ¥14,170,000 (Direct Cost: ¥10,900,000、Indirect Cost: ¥3,270,000)
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| Outline of Final Research Achievements |
In order to realize a laser composed of III-V-N alloy lattice-matched to Si, it was examined the potential of surface nitridation method, in which partially surface nitridation and regrowth are alternates, to overcome reduction of nitrogen incorporation efficiency at high-temperature and/or generation of non-radiative recombination centers in GaAsN active and GaAsPN cladding layers.
During the surface nitridation, both maintaining the (1x4) surface reconstruction and high-temperature growth (>550°C) are very effective to reduce the non-radiative centers. Also, high-quality GaAsPN cladding layer can be obtain by the use of As2 and P2 as the group-V sources, low V/III ratio (<4), and relatively high-temperature(>550°C).
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