Innovative betterment of epitaxial graphene on Si substrate that accelerates realization of graphene electronics

• Project/Area Number: 25286053
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Thin film/Surface and interfacial physical properties
• Research Institution: Tohoku University
• Principal Investigator: Suemitsu Maki 東北大学, 電気通信研究所, 教授 (00134057)
• Co-Investigator(Kenkyū-buntansha): FUKIDOME Hirokazu 東北大学, 電気通信研究所, 准教授 (10342841) ; JIAO Sai 東北大学, 電気通信研究所, 教育研究支援者 (80710475)
• Co-Investigator(Renkei-kenkyūsha): NAGASAWA Hiroyuki 東北大学, 電気通信研究所, 産学官連携研究員 (60649367)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥18,980,000 (Direct Cost: ¥14,600,000、Indirect Cost: ¥4,380,000); Fiscal Year 2015: ¥2,860,000 (Direct Cost: ¥2,200,000、Indirect Cost: ¥660,000); Fiscal Year 2014: ¥2,730,000 (Direct Cost: ¥2,100,000、Indirect Cost: ¥630,000); Fiscal Year 2013: ¥13,390,000 (Direct Cost: ¥10,300,000、Indirect Cost: ¥3,090,000)
• Keywords: 3C-SiC / ヘテロエピタキシ / グラフェン / 積層欠陥 / 転位 / 表面化学反応

Outline of Final Research Achievements

In order to realize high-performance devices using the "graphene on silicon (GOS)" technology in which cubic 3C-SiC film is grown on Si substrates, the crystal defects that primarily limit the grain size have been reduced. First, the structure and the formation mechanism of the planar defects in 3C-SiC were revealed. Then, the defect density was estimated, by using a Monte-Carlo simulation, as a function of the epitaxial layer thickness. The result suggested a configuration of defects to minimize the surface defect density, whose validity was confirmed experimentally by executing the 3C-SiC epitaxially on Si substrate.

Research Products

• [Int'l Joint Research] トムスク州立大学(ロシア連邦)
• [Journal Article] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate (2016)
  • Author(s): Shota Sambonsuge, Shun Ito, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, and Maki Suemitsu
  • Journal Title: Phys. Status Solidi A Volume: 印刷中 Issue: 5 Pages: 1125-1129
  • DOI: 10.1002/pssa.201532675
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] In Situ SR-XPS Observation of Ni-Assisted Low-Temperature Formation of Epitaxial Graphene on 3X-SiC/Si (2015)
  • Author(s): Mika Hasegawa, Kenta Sugawara, Ryota Suto, Shota Sambonsuge, Yuden Teraoka, Akitaka Yoshigoe, Sergey Filimonov, Hirokazu Fukidome, and Maki Suemitsu
  • Journal Title: Nanoscale Research Letter Volume: 10 Issue: 1 Pages: 421-426
  • DOI: 10.1186/s11671-015-1131-9
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Controlling Planar Defects in 3C-SiC: Ways to Wake it up as a Practical Semiconductor (2015)
  • Author(s): Hiroyoki Nagasawa, Ramya Gurunathan, Maki Suemitsu
  • Journal Title: Materials Science Forum Volume: 821-823 Pages: 108-114
  • DOI: 10.4028/www.scientific.net/msf.821-823.108
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Correlation between the residual stress in 3C-SiC/Si epifilm and the quality of epitaxial graphene formed thereon (2015)
  • Author(s): R Bantaculo, H Fukidome and M Suemitsu
  • Journal Title: IOP Conf. Series: Materials Science and Engineering Volume: 79 Pages: 012004-012004
  • DOI: 10.1088/1757-899x/79/1/012004
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110) (2015)
  • Author(s): Shota Sambonsuge, Sai Jiao, Hiroyuki Nagasawa, Hirokazu Fukidome, Sergey N. Filimonov, Maki Suemitsu
  • Journal Title: Diamond & Related Materials Volume: 67 Pages: 51-53
  • DOI: 10.1016/j.diamond.2016.02.020
  • Peer Reviewed / Open Access / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] 高品質エピタキシャルグラフェンを用いたGFETの特性評価 (2015)
  • Author(s): 須藤亮太、舘野泰範、吹留博一、末光眞希
  • Journal Title: 第62回応用物理学会春季学術講演会 予稿集 Volume: 1
  • Acknowledgement Compliant
• [Journal Article] Si基板上エピタキシャルグラフェンのNi援用低温形成とリアルタイム/角度分解光電子分光によるグラフェン化機構評価 (2015)
  • Author(s): 長谷川美佳、須藤亮太、菅原健太、三本菅正太、原本直樹、寺岡有殿、吉越章隆、吹留博一、末光眞希
  • Journal Title: 第62回応用物理学会春季学術講演会 予稿集 Volume: 1
  • Acknowledgement Compliant
• [Journal Article] High quality graphene formation on 3C-SiC/4H-AIN/Si heterostructure (2014)
  • Author(s): Sai Jiao, Yuya Murakami, Hiroyuki Nagasawa, Hirokazau Fukidome, Isao Makabe, Yasunori Tateno, Takashi Nakabayashi, Maki Suemitsu
  • Journal Title: Materials Science Forum Volume: 806 Pages: 89-93
  • DOI: 10.4028/www.scientific.net/msf.806.89
  • Peer Reviewed / Open Access
• [Journal Article] Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact (2014)
  • Author(s): Hirokazu Fukidome, Masato Kotsugi, Kosuke Nagashio, Ryo Sato, Takuo Ohkochi, Takashi Itoh, Akira Toriumi, Maki Suemitsu, and Toyohiko Kinoshita
  • Journal Title: Scientific Report Volume: 4 Issue: 9 Pages: 37131-5
  • DOI: 10.1088/0022-3727/47/9/094016
  • Peer Reviewed
• [Journal Article] Microscopically-Tuned Band Structure of Epitaxial Graphene through Interface and Stacking Variations Using Si Substrate Microfabrication (2014)
  • Author(s): Hirokazu Fukidome, Takayuki Ide, Yusuke Kawai, Toshihiro Shinohara, Naoka Nagamura, Koji Horiba, Masato Kotsugi, Takuo Ohkochi, Toyohiko Kinoshita, Hiroshi Kumighashira, Masaharu Oshima, Maki Suemitsu
  • Journal Title: Scientific Reports Volume: 4 Issue: 1 Pages: 5173-5173
  • DOI: 10.1038/srep05173
  • Peer Reviewed / Open Access
• [Journal Article] Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy (2014)
  • Author(s): Hirokazu Fukidome, Kousuke Nagashio, Naoka Nagamura, Keiichiro Tashima, Kazutoshi Funakubo, Koji Horiba, Maki Suemitsu, Akira Toriumi, Masaharu Oshima
  • Journal Title: Applied Physics Express Volume: 7 Issue: 6 Pages: 065101-065101
  • DOI: 10.7567/apex.7.065101
  • NAID: 210000137137
  • Peer Reviewed
• [Journal Article] Observing hot carrier distribution in an n-type epitaxial graphene on a SiC substrate (2014)
  • Author(s): T. Someya, F. Fukidome, Y. Ishida, R. Yoshida, T. Iimori, R. Yukawa, K. Akikubo, Sh. Yamamoto, S. Yamamoto, T. Yamamoto, T. Kanai, K. Funakubo, M. Suemitsu, J. Itatani, F. Komori, S. Shin, I. Matsuda
  • Journal Title: Applied Physics Letters Volume: 104 Issue: 16
  • DOI: 10.1063/1.4871381
  • Peer Reviewed
• [Journal Article] Silicon Carbide on Silicon (110) : Surface Structure and Mechanisms of Epitaxial Growth (2014)
  • Author(s): S. Sambonsuge, L.N. Nikitina, Yu.Yu. Hervieu, M. Suemitsu, S.N. Filimonov
  • Journal Title: Russian Physics Journal Volume: 56 Issue: 12 Pages: 1439-1444
  • DOI: 10.1007/s11182-014-0197-7
  • Peer Reviewed
• [Journal Article] High-Resolution Imaging of Hydrogen-Intercalated Graphene on 4H-SiC(0001) Using Non-Contact Scanning Nonlinear Dielectric Microscopy (2014)
  • Author(s): Kohei Yamasue, H. Fukidome, K. Funakubo, M. Suemitsu, Y. Cho
  • Journal Title: ICN+T 2014 Abstract Book Volume: 1 Pages: 58-58
  • Peer Reviewed
• [Journal Article] Noncontact scanning nonlinear dielectric microscopy study of graphene on 4H-SiC(0001) and its hydrogen-intercalation (2014)
  • Author(s): Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
  • Journal Title: NC-AFM 2014 Book of Abstracts Volume: 1
  • Peer Reviewed
• [Journal Article] Investigation of Hydrogen-Intercalated Graphene on 4H-SiC(0001) by Noncontact Scanning Nonlinear Dielectric Microscopy (2014)
  • Author(s): Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
  • Journal Title: ECOSS30: the 30th European Conference on Surface Science Book of Abstracts Volume: 1
  • Peer Reviewed
• [Journal Article] Comparative Study on Pristine and Hydrogen-Intercalated Graphene on 4H-SiC(0001) Surface Using Noncontact Scanning Nonlinear Dielectric Microscopy (2014)
  • Author(s): Kohei Yamasue, Hirokazu Fukidome, Kazutoshi Funakubo, Maki Suemitsu, Yasuo Cho
  • Journal Title: MRS Fall Meeting 2014 Abstracts Book Volume: 1
  • Peer Reviewed
• [Journal Article] Controlling Planar Defects in 3C–SiC: Ways to Wake it up Develop 3C-SiC as a Practical Semiconductor (2014)
  • Author(s): Hiroyuki Nagasawa, Maki Suemitsu
  • Journal Title: ECSCRM2014: European Conf. on Silicon Carbide and Related Materials Abstracts Book Volume: 1
• [Journal Article] Epitaxial Graphene on Silicon Substrates: Tailoring the Properties through Crystal Faces (2014)
  • Author(s): M. Suemitsu
  • Journal Title: 2014 Tsukuba Nanotechnology Symposium (TNS'14), Abstract book Volume: 1 Pages: 17-17
• [Journal Article] Graphene based Electronic & Photonic Devices, Circuits and Systems (2014)
  • Author(s): M. Suemitsu
  • Journal Title: EXMATEC 2014 Book of Abstracts Volume: 1 Pages: 197-198
• [Journal Article] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon (2014)
  • Author(s): M. Suemitsu, S. N. Filimonov
  • Journal Title: Asia-Pacific Symposium on Solid Surfaces Abstracts Book Volume: 1
  • Acknowledgement Compliant
• [Journal Article] MoS2 FETにおける金属－チャネル界面領域での電荷移動観察 (2014)
  • Author(s): 須藤亮太、田島圭一郎、安川奈那、北田祐太、永村直佳、本間格、堀場弘司、尾嶋正治、吹留博一、末光眞希
  • Journal Title: 第75回応用物理学会秋季学術講演会 予稿集 Volume: 1
  • Acknowledgement Compliant
• [Journal Article] 微細加工Si基板上GOSグラフェンの電荷移動領域観察 (2014)
  • Author(s): 田島圭一郎、井出隆之、永村直佳、堀場弘司、尾嶋正治、吹留博一、末光眞希
  • Journal Title: 第75回応用物理学会秋季学術講演会 予稿集 Volume: 1
  • Acknowledgement Compliant
• [Journal Article] グラフェンとNiの界面反応の微視的「その場」観察 (2014)
  • Author(s): 長谷川美佳、吹留博一、小嗣真人, 大河内拓雄, 木下豊彦、伊藤俊、末光眞希
  • Journal Title: 第75回応用物理学会秋季学術講演会 予稿集 Volume: 1
  • Acknowledgement Compliant
• [Journal Article] 微細加工基板へのグラフェンのエピ成長による擬電磁場の創出 (2013)
  • Author(s): 吹留博一、小嗣真人、川合祐輔、井出隆之、大河内拓雄、木下豊彦、末光眞希
  • Journal Title: 表面科学 Volume: 34 Pages: 380-384
  • NAID: 10031184986
  • Peer Reviewed
• [Journal Article] High-Performance Graphene Field-Effect Transistors with Extremely small access length using self-aligned source and drain techniques (2013)
  • Author(s): M. -H. Jung, G. -H. Park, T. Yoshida, H. Fukidome, T. Suemitsu, T. Otsuji, and M. Suemitsu
  • Journal Title: Proceeding of the IEEE Volume: 101 Issue: 7 Pages: 1603-1608
  • DOI: 10.1109/jproc.2013.2258651
  • Peer Reviewed
• [Journal Article] Site selective epitaxy of graphene on Si wafers (2013)
  • Author(s): H. Fukidome, Y. Kawai, H. Handa, H. Hibino, H. Miyashita, M. Kotsugi, T. Ohkochi, M. Jung, T. Suemitsu, T. Kinoshita, T. Otsuji, and M. Suemitsu
  • Journal Title: Proceeding of the IEEE Volume: 101 Issue: 7 Pages: 1557-1566
  • DOI: 10.1109/jproc.2013.2259131
  • Peer Reviewed
• [Journal Article] Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact,Orbital-specific Tunability of Many-Body Effects in Bilayer Graphene by Gate Bias and Metal Contact (2013)
  • Author(s): Hirokazu Fukidome, Masato Kotsugi, Kosuke Nagashio, Ryo Sato, Takuo Ohkochi, Takashi Itoh, Akira Toriumi, Maki Suemitsu & Toyohiko Kinoshita
  • Journal Title: Scientific Report Volume: 4 Issue: 1 Pages: 3713-3713
  • DOI: 10.1038/srep03713
  • Peer Reviewed
• [Presentation] Recent Progress in the Epitaxial Graphene Formation on 3C-SiC/Si Substrates (2016)
  • Author(s): Maki Suemitsu
  • Organizer: 2016 MRS Spring Meeting & Exhibit
  • Place of Presentation: Phoenix Convention Center (Pheonix, AZ, USA)
  • Year and Date: 2016-03-31
  • Int'l Joint Research / Invited
• [Presentation] Si基板上3C-SiCヘテロエピ成長とエピタキシャルグラフェン (2016)
  • Author(s): 末光眞希
  • Organizer: 第８回九大グラフェン研究会
  • Place of Presentation: 九州大学（福岡県春日市）
  • Year and Date: 2016-01-29
  • Invited
• [Presentation] Recent progress in epitaxial graphene on bulk and thin film SiC crystals (2015)
  • Author(s): Maki Suemitsu
  • Organizer: IEFM 2015: International symposium on emerging functional materials
  • Place of Presentation: Songdo Convensia (Incheon, Korea)
  • Year and Date: 2015-11-06
  • Int'l Joint Research / Invited
• [Presentation] SiCエピタキシャル成長技術と ポリタイプ積層 (2015)
  • Author(s): 長澤弘幸
  • Organizer: 第45回結晶成長国内会議（NCCG-45）
  • Place of Presentation: 北海道大学（北海道札幌市）
  • Year and Date: 2015-10-20
  • Invited
• [Presentation] Ni-assisted low-temperature formation of epitaxial graphene on3C-SiC/Si and real-time SR-XPS analysis of its reaction (2015)
  • Author(s): Mika Hasegawa
  • Organizer: 2015 International Conference of Silicon Carbide and Related Materials
  • Place of Presentation: Congress Center Atahotel Naxos Beach (Giadirni Naxos, Italy)
  • Year and Date: 2015-10-06
• [Presentation] Epitaxial graphene formation on SiC and on Si substrates (2015)
  • Author(s): Maki Suemitsu
  • Organizer: PSS 2015: Physical Sciences Symposia-2015
  • Place of Presentation: Courtyard Marriott (Cambridge, MA, USA)
  • Year and Date: 2015-09-22
  • Int'l Joint Research / Invited
• [Presentation] Si(110)上3C-SiC(111)薄膜の結晶方位回転成長機構 (2015)
  • Author(s): 横山 大
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（愛知県名古屋市）
  • Year and Date: 2015-09-15
• [Presentation] Evaluations of crystal defects of 3C-SiC(-1-1-1) film on Si(110) substrate (2015)
  • Author(s): Maki Suemitsu
  • Organizer: SENM2015: the international conference on Smart Engineering of New Materials
  • Place of Presentation: Andel's Hotel (Lodz, Poland)
  • Year and Date: 2015-06-25
  • Int'l Joint Research
• [Presentation] Formation of qualified epitaxial graphene on Si substrates using two-step heteroexpitaxy of C-terminated 3C-SiC(-1-1-1) on Si(110) (2015)
  • Author(s): Maki Suemitsu
  • Organizer: SENM2015: the international conference on Smart Engineering of New Materials
  • Place of Presentation: Andel's Hotel (Lodz, Poland)
  • Year and Date: 2015-06-23
  • Int'l Joint Research
• [Presentation] 高品質エピタキシャルグラフェンを用いたGFETの特性評価 (2015)
  • Author(s): 須藤亮太
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 平塚，日本
  • Year and Date: 2015-03-14
• [Presentation] Si基板上エピタキシャルグラフェンのNi援用低温形成とリアルタイム/角度分解光電子分光によるグラフェン化機構評価 (2015)
  • Author(s): 長谷川美佳
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 平塚，日本
  • Year and Date: 2015-03-12
• [Presentation] Comparative Study on Pristine and Hydrogen-Intercalated Graphene on 4H-SiC(0001) Surface Using Noncontact Scanning Nonlinear Dielectric Microscopy (2014)
  • Author(s): Kohei Yamasue
  • Organizer: MRS Fall Meeting 2014
  • Place of Presentation: Boston, USA
  • Year and Date: 2014-12-02
• [Presentation] Growth of epitaxial graphene on SiC and its application to FET (2014)
  • Author(s): Maki Suemitsu
  • Organizer: 2nd Malaysia Graphene and Carbon Nanotube Workshop (MGCW 2014)
  • Place of Presentation: Kuala Lumpur, Malaysia
  • Year and Date: 2014-10-20
  • Invited
• [Presentation] グラフェンのディスプレイ応用の可能性 (2014)
  • Author(s): 末光眞希
  • Organizer: CEATEC JAPAN 2014/電子ディスプレイ研究専門委員会（EID）
  • Place of Presentation: 幕張、千葉，日本
  • Year and Date: 2014-10-09
  • Invited
• [Presentation] Heteroepitaxy of 3C-SiC on Si Using GSMBE and Formation of Epitaxial Graphene Thereon (2014)
  • Author(s): Maki Suemitsu
  • Organizer: Asia-Pacific Symposium on Solid Surfaces
  • Place of Presentation: Vladivostok, Russia
  • Year and Date: 2014-09-30
  • Invited
• [Presentation] Controlling Planar Defects in 3C–SiC: Ways to Wake it up Develop 3C-SiC as a Practical Semiconductor (2014)
  • Author(s): Hiroyuki Nagasawa
  • Organizer: ECSCRM2014: European Conf. on Silicon Carbide and Related Materials （Key Note Talk)
  • Place of Presentation: Grenoble, France
  • Year and Date: 2014-09-22
  • Invited
• [Presentation] 微細加工Si基板上GOSグラフェンの電荷移動領域観察 (2014)
  • Author(s): 田島圭一郎
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 札幌，日本
  • Year and Date: 2014-09-18
• [Presentation] グラフェンとNiの界面反応の微視的「その場」観察 (2014)
  • Author(s): 長谷川美佳
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 札幌，日本
  • Year and Date: 2014-09-18
• [Presentation] MoS2 FETにおける金属－チャネル界面領域での電荷移動観察 (2014)
  • Author(s): 須藤亮太
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 札幌，日本
  • Year and Date: 2014-09-17
• [Presentation] What is 'Killer Defect' in 3C-SiC (2014)
  • Author(s): 長澤弘幸
  • Organizer: IUMRS-ICA: the 15th International Union of Materials Research Societies, International Conference in Asia
  • Place of Presentation: 福岡，日本
  • Year and Date: 2014-08-29
  • Invited
• [Presentation] Investigation of Hydrogen-Intercalated Graphene on 4H-SiC(0001) by Noncontact Scanning Nonlinear Dielectric Microscopy (2014)
  • Author(s): Kohei Yamasue
  • Organizer: ECOSS30: the 30th European Conference on Surface Science
  • Place of Presentation: Antalya, Turky
  • Year and Date: 2014-08-29
• [Presentation] Epitaxial Graphene on Silicon Substrates: Tailoring the Properties through Crystal Faces (2014)
  • Author(s): 末光眞希
  • Organizer: 2014 Tsukuba Nanotechnology Symposium (TNS'14)
  • Place of Presentation: つくば，日本
  • Year and Date: 2014-07-26
  • Invited
• [Presentation] シリコン基板上3C-SiCのガスソースMBE成長とグラフェン・オン・シリコン技術 (2014)
  • Author(s): 末光眞希
  • Organizer: 第11回Cat-CVD研究会
  • Place of Presentation: 仙台，日本
  • Year and Date: 2014-07-11
  • Invited
• [Presentation] Graphene based Electronic & Photonic Devices, Circuits and Systems (2014)
  • Author(s): 末光眞希
  • Organizer: EXMATEC 2014
  • Place of Presentation: Delphi, Greece
  • Year and Date: 2014-06-19
  • Invited
• [Presentation] Microscopic Control of structural and electronic properties of Graphene by growing on SiC thin film on a microfabricated Si substrate
  • Author(s): H. Fukidome, T. Ide, Y. Kawai, M. Suemitsu, T. Ohkouchi, M. Kotsugi, T. Kinoshita, T. Shinohara, N. Nagamura, S. Toyoda, K. Horiba, M. Oshima
  • Organizer: Graphene Week 2013
  • Place of Presentation: Chemnitz, Germany
• [Presentation] High quality graphene formation on 3C-SiC/4H-AlN/Si heterostructure
  • Author(s): S. Jiao, Y. Murakami, Y. Tateno, T. Nakabayashi, H. Fukidome, and M. Suemitsu
  • Organizer: HeteroSic-WASMPE2013
  • Place of Presentation: Nice, France
• [Presentation] Graphene FETs: Issues and Prospects
  • Author(s): M. Suemitsu
  • Organizer: AMFPD13 (The twentieth International Workshop on Active-Matrix Flatpanel Displays and Devices)
  • Place of Presentation: 京都
  • Invited
• [Presentation] Microscopic Control of Epitaxial Graphene on SiC(111) and SiC(100) Thin Films on a Microfabricated Si(100) Substrate
  • Author(s): H. Fukidome, T. Ide, M. Suemitsu, Y. Kawai, T. Ohkouchi, M. Kotsugi, T. Kinoshita, T. Shinohara, N. Nagamura, S. Toyoda, K. Horiba, M. Oshima
  • Organizer: AVS 60th International Symposium & Exhibition
  • Place of Presentation: Los Angels, USA
• [Presentation] XRD and Raman-Spectroscopic Evaluation of Graphene on 3C-SiC(111)/Vicinal Si(111) Substrate
  • Author(s): Naoki Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome and M. Suemitsu","Naoki Haramoto, S. Inomata, S. Sambonsuge, H. Fukidome and M. Suemitsu
  • Organizer: ALC'13
  • Place of Presentation: Hawaii, USA
• [Presentation] グラフェンデバイスの現状と課題
  • Author(s): 末光眞希
  • Organizer: 日本学術振興会 産学協力研究委員会 ナノプローブテクノロジー第167委員会第70回研究会「グラフェン・シリセン・CNT」
  • Place of Presentation: 東京
  • Invited
• [Presentation] グラフェンデバイスのオペランド顕微分光
  • Author(s): 吹留博一
  • Organizer: 物性研究所短期研究会「真空紫外・軟Ｘ線放射光物性研究の将来」
  • Place of Presentation: 東京
• [Presentation] In-Operando Nanoscale Characterization of Graphene Device Interfaces by Using Soft X-ray Spectromicroscopy
  • Author(s): H. Fukidome
  • Organizer: NIMS conference2013(機能性原子/分子薄膜の構造制御とその応用）
  • Place of Presentation: つくば
• [Presentation] Epitaxial graphene formation on Si substrates: its history and current status
  • Author(s): M. Suemitsu
  • Organizer: Physical Sciences Symposium-2013, Session VII:Graphene Electronics, Plasmonics & Silicon Technology
  • Place of Presentation: Boston, USA
  • Invited
• [Presentation] Epitaxial Graphene on Silicon Substrates: Current Status and Perspective
  • Author(s): Sai JIAO, Maki Suemitsu
  • Organizer: Energy Materials Nanotechnology(EMN) East Workshop
  • Place of Presentation: Beijing, China
  • Invited
• [Presentation] 微傾斜Si(111)基板使用によるSi基板上エピタキシャルグラフェンの高品質化
  • Author(s): 原本直樹，猪俣州哉，三本菅正太，吹留博一，末光眞希
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 京都
• [Presentation] Si(110)基板上3C-SiC(111)回転エピ膜上に形成したエピタキシャルグラフェンの断面TEM 評価
  • Author(s): 三本菅 正太，長澤 弘幸，Sergey Filimonov ，伊藤 駿，吹留 博一，末光 眞希
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 京都
• [Presentation] From 3C-SiC growth to graphene formation using 4H-AlN(0001)/Si(111) heterostructure
  • Author(s): Sai Jiao, Hirokazu Fukidome, Yasunori Tateno, Takashi Nakabayashi and Maki Suemitsu
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 京都
• [Presentation] SiC上エピタキシャルグラフェンの成長過程とグラフェン・オン・シリコン技術
  • Author(s): 末光眞希
  • Organizer: 日本物理学会
  • Place of Presentation: 徳島
  • Invited
• [Presentation] Epitaxial Graphene Formation on 3C-SiC(111)/4H-AlN(0001) Double Layer Stacking on Si(111) Substrates
  • Author(s): S. Jiao, H. Fukidome, H. Nagasawa, S. Filimonov, M. Tateno, I. Makabe, T. Nakabayashi, and M. Suemitsu
  • Organizer: The International Conference on Silicon Carbide and Related Materials
  • Place of Presentation: 宮崎
• [Presentation] Surface Energy Anisotropy of Clean and Hydrodgen Covered 3C-SiC Surfaces
  • Author(s): S.N. Filimonov, Yu.Yu. Hervieu, S. Jiao, S. Sambonsuge and M. Suemitsu
  • Organizer: ACSIN-12&ICSPM21
  • Place of Presentation: つくば
• [Presentation] Heteroepitaxy of 3C-SiC on Si and Formation of Epitaxial Graphene
  • Author(s): M. Suemitsu
  • Organizer: 半導体に関する日露合同セミナー
  • Place of Presentation: 仙台
  • Invited
• [Presentation] 微細加工Si(100), Si(111)基板上エピタキシャルグラフェンの物性評価
  • Author(s): 田島圭一郎、末光眞希、吹留博一,川合祐輔、尾嶋正治、堀場弘司、永村直佳、井出隆之
  • Organizer: 第54回真空に関する連合講演会
  • Place of Presentation: つくば
• [Presentation] Si(110)基板上3C-SiC(111)結晶方位回転エピ膜の断面TEM評価
  • Author(s): 三本菅 正太、長澤 弘幸、伊藤 駿、吹留 博一、末光 眞希
  • Organizer: SiC及び関連半導体研究 第22回講演会
  • Place of Presentation: 浦和
• [Presentation] 微傾斜Si(111)基板上3C-SiC(111)薄膜の断面TEM評価
  • Author(s): 原本 直樹、長澤 弘幸、伊藤 俊、吹留 博一、末光 眞希
  • Organizer: SiC及び関連半導体研究 第22回講演会
  • Place of Presentation: 浦和
• [Presentation] 3C-SiC/Si(111)ヘテロエピタキシャル界面から発生する積層欠陥の抑制
  • Author(s): 細谷友崇、三本菅正太、長澤弘幸、伊藤俊、吹留博一、末光眞希
  • Organizer: SiC及び関連半導体研究 第22回講演会
  • Place of Presentation: 浦和
• [Presentation] グラフェンのオペランド・ナノ X線吸収分光
  • Author(s): 吹留博一、小嗣真人、長汐晃輔、佐藤 良、大河内拓雄 、木下豊彦、伊藤隆、鳥海 明、末光眞希
  • Organizer: 第９回顕微ナノ材料科学研究会/放射光表面科学研究部会合同シンポジウム
  • Place of Presentation: 仙台
• [Presentation] 微細加工Si(100), Si(111)上エピタキシャルグラフェンの電子状態観察
  • Author(s): 田島圭一郎，井出隆之, 川合祐輔, 堀場弘司, 永村直佳, 尾嶋正治, 吹留博一, 末光眞希
  • Organizer: 第９回顕微ナノ材料科学研究会/放射光表面科学研究部会合同シンポジウム
  • Place of Presentation: 仙台
• [Presentation] Nanoscale Operando observation of graphene transistor by using photoelectron emission microscopy
  • Author(s): Hirokazu Fukidome
  • Organizer: EMN Spring Meeting
  • Place of Presentation: Las Vegas, USA
• [Presentation] Operando observation of graphene device by using photoelectron emission microscopy
  • Author(s): Hiromazu Fukidome
  • Organizer: SPEM2014
  • Place of Presentation: Oxford, UK