| Budget Amount *help |
¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2015: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2014: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2013: ¥9,360,000 (Direct Cost: ¥7,200,000、Indirect Cost: ¥2,160,000)
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| Outline of Final Research Achievements |
We studied electrically-active defects in 4H-SiC MOSFETs (metal-oxide-semiconductor field-effect transistors) using electrically-detected magnetic resonance (EDMR) spectroscopy. The EDMR observations revealed that "channel doping" of nitrogen donors or phosphorous donors has a crucial role on the improvement of channel mobility in Si-face SiC-MOSFETs. On the other hand, in C-face SiC-MOSFETs, a different type of interface defect is dominantly formed, which we named "C-face defects." They have a crucial role on the threshold-voltage instability in C-face MOSFETs. The control of "channel doping" and "C-face defects" is key for commercializing high-performance and high-reliability SiC-MOSFETs.
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