| Budget Amount *help |
¥18,460,000 (Direct Cost: ¥14,200,000、Indirect Cost: ¥4,260,000)
Fiscal Year 2015: ¥4,420,000 (Direct Cost: ¥3,400,000、Indirect Cost: ¥1,020,000)
Fiscal Year 2014: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
Fiscal Year 2013: ¥6,890,000 (Direct Cost: ¥5,300,000、Indirect Cost: ¥1,590,000)
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| Outline of Final Research Achievements |
Work function plays a key role in any types of surface and interface functionalities which involve an electron transfer across the solid surface or interface. Surface work function is one of the most important parameters in catalytic functionalities and in efficient electron emitters. In addition, work function is fundamental to design diode junctions and metal-oxide-insulator (MOS) field-effect transistors (FETs). We have controlled work function in the form of heterostructures by using chemically stable oxides and nitrides. Specifically, by introducing charged defects in magnesium oxide thin films we have realized the work function as low as 2 eV.
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