| Project/Area Number |
25286080
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Partial Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Plasma electronics
|
|---|
| Research Institution | Nagoya University |
|---|
Principal Investigator |
Sekine Makoto 名古屋大学, 工学(系)研究科(研究院), 教授 (80437087)
|
|---|
| Co-Investigator(Renkei-kenkyūsha) |
TAKEDA Keigo 名古屋大学, 大学院工学研究科, 助教 (00377863)
KONDO Hiroki 名古屋大学, 大学院工学研究科, 准教授 (50345930)
HAYASHI Toshio 名古屋大学, 大学院工学研究科, 教授 (30519591)
ISHIKAWA Kenji 名古屋大学, 大学院工学研究科, 教授 (60417384)
|
|---|
| Project Period (FY) |
2013-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥19,110,000 (Direct Cost: ¥14,700,000、Indirect Cost: ¥4,410,000)
Fiscal Year 2015: ¥3,250,000 (Direct Cost: ¥2,500,000、Indirect Cost: ¥750,000)
Fiscal Year 2014: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2013: ¥12,870,000 (Direct Cost: ¥9,900,000、Indirect Cost: ¥2,970,000)
|
|---|
| Keywords | プラズマ化学 / プラズマエッチング / プラズマ加工 / 凹凸 / レジスト / プラズマビーム |
|---|
| Outline of Final Research Achievements |
By the fabrication with the nano-scaled integrations, systems and devices such as integrated electrical circuits, sensors and actuators, etc. have been realized and is an indispensable for the modern human life. However, in the utilization of plasma-etching technologies, the process-fluctuations had been issued on the control at the sub-nanometer scale. The points are the selectivity of materials, smoothness, and damageless. We focus on the control of polymer structure at nano-scale length during plasma process. The HBr plasma cure has been introduced to suppress deformation of photoresist during plasma etching processes in the era of ArF photolithographic pattern transfer. A detailed suppression-mechanism on the HBr plasma cure was revealed by the plasma-beam experiments in this study. Therefore, the scientific and technological information will contribute to the control of the high critical dimensions during plasma etching processes.
|
