Development and Application of Bulk Sensitivity Controllable Atomic Structure Analysis Method by "Inverse Photoelectron Diffracion"
Project/Area Number |
25287075
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Condensed matter physics I
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Research Institution | Nara Institute of Science and Technology |
Principal Investigator |
Fumihiko Matsui 奈良先端科学技術大学院大学, 物質創成科学研究科, 准教授 (60324977)
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Project Period (FY) |
2013-04-01 – 2017-03-31
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Project Status |
Completed (Fiscal Year 2016)
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Budget Amount *help |
¥19,370,000 (Direct Cost: ¥14,900,000、Indirect Cost: ¥4,470,000)
Fiscal Year 2016: ¥1,560,000 (Direct Cost: ¥1,200,000、Indirect Cost: ¥360,000)
Fiscal Year 2015: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2014: ¥4,550,000 (Direct Cost: ¥3,500,000、Indirect Cost: ¥1,050,000)
Fiscal Year 2013: ¥9,750,000 (Direct Cost: ¥7,500,000、Indirect Cost: ¥2,250,000)
|
Keywords | 光電子回折 / Auger電子回折 / 原子構造 / 放射光・軟X線 / 表面・界面 / 非弾性散乱過程 / 表面・界面構造 / 表面・界面物性 / Auger電子 / 二次電子 / 非弾性散乱 / 電子分析器 |
Outline of Final Research Achievements |
We discovered a phenomenon called negative contrast photoelectron diffraction in the energy-loss electron angular distribution which appears irrespective of polarization and type (light / electron) of the excitation source. By measuring photoelectron diffraction and energy-loss electron diffraction patterns in various crystal samples, we systematically investigated the relation between negative contrast photoelectron diffraction effect and escape depth, and clarified the mechanism of this phenomenon. Furthermore, we established a background removal method. The local atomic structure around dilute dopant atoms has been investigated. We also devised a new compact display type analyzer that efficiently measures such diffraction patterns and filed a patent application.
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Report
(5 results)
Research Products
(108 results)
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[Journal Article] Photoelectron holographic atomic arrangement imaging of cleaved bimetal-intercalated graphite superconductor surface2016
Author(s)
F. Matsui, R. Eguchi, S. Nishiyama, M. Izumi, E. Uesugi, H. Goto, T. Matsushita, K. Sugita, H. Daimon, Y. Hamamoto, I. Hamada, Y. Morikawa, Y. Kubozono
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Journal Title
Scientific Reports 6, 36258 (2016)
Volume: 6
Issue: 1
Pages: 36258-36258
DOI
NAID
Related Report
Peer Reviewed / Open Access / Acknowledgement Compliant
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[Journal Article] Surface Aligned Magnetic Moments and Hysterisis of an Endohedral Single-Molecule Magnet on a Metal2015
Author(s)
Rasmus Westerstrom, Anne-Christine Uldry, Roland Stania, Jan Dreiser, Cinthia Piamonteze, Matthias Muntwiler, Fumihiko Matsui, Stefano Rusponi, Harald Brune, Shangfeng Yang, Alexey Popov, Bernd Buchner, Bernard Delley, Thomas Greber
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Journal Title
Physical Review Letters
Volume: 114
Issue: 8
DOI
Related Report
Peer Reviewed
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[Journal Article] Local atomic configuration of graphene, buffer layer, and precursor layer on SiC(0001) by photoelectron diffraction2015
Author(s)
Hirosuke Matsui, Fumihiko Matsui, Naoyuki Maejima, Tomohiro Matsushita, T. Okamoto, Azusa N. Hattori, Y. Sano, K. Yamauchi, Hiroshi Daimon
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Journal Title
Surface Science
Volume: 632
Pages: 90-102
DOI
Related Report
Peer Reviewed / Open Access
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[Journal Article] Lattice distortion of porous Si by Li absorption using two-dimensional photoelectron diffraction2013
Author(s)
E. S. Nouh, S. N. Takeda, F. Matsui, K. Hattori, T. Sakata, N. Maejima, H. Matsui, H. Matuda, T. Matsushita. L. Toth, M. Morita, S. Kitagawa, R. Ishii, M. Fujita, K. Yasuda, H. Daimon
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Journal Title
Journal of Materials Science
Volume: 49
Issue: 1
Pages: 35-42
DOI
Related Report
Peer Reviewed
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[Journal Article] The Influence of Fluorinated Silicon Nitride Gate Insulator on Positive Bias Stability toward Highly Reliable Amorphous InGaZnO Thin-Film Transistors2013
Author(s)
H. Yamazaki, Y. Ishikawa, M. Fujii, Y. Ueoka, M. Fujiwara, E. Takahashi, Y. Andoh, N. Maejima, H. Matsui, F. Matsui, H. Daimon, Y. Uraoka
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Journal Title
ECS Journal of Solid State Science and Technology
Volume: 3
Issue: 2
Pages: 20-23
DOI
Related Report
Peer Reviewed
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[Presentation] Atomic structure analysis around doped W atom in ZnO thin film by photoelectron diffraction2016
Author(s)
S. Fukami, Y. Adachi, I. Sakaguhi, K. Watanabe, T. Kinoshita, T. Muro, T. Matsushita, M. Taguchi, F. Matsui, H. Daimon, T.T. Suzuki
Organizer
VUVX2016
Place of Presentation
ETH Zurich, Switzerland
Year and Date
2016-07-04
Related Report
Int'l Joint Research
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[Presentation] Temperature Dependence of Atomic Structure Around Doped W atom in ZnO thin film studied by photoelectron diffraction2016
Author(s)
S. Fukami, Y. Adachi, I. Sakaguchi, K. Watanabe, T. Muro, T. Matsushita, M. Taguchi, F.Matsui, H. Daimon, T. T. Suzuki
Organizer
Local 3D atomic and electronic structure imaging of functionally active sites (VUVX016 satellite symposium)
Place of Presentation
Univ. Zurich, Switzerland
Year and Date
2016-06-30
Related Report
Int'l Joint Research
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[Presentation] Time-Resolved Atomic Imaging of 3D Active Site by Micro-Photoelectron Holography at SPring-82016
Author(s)
T. Kinoshita, T. Muro, H. Daimon, F. Matsui, M. Shimomura, M. Kouguchi, M. Taguchi, T. Yokoya, T. Wakita, K. Terashima, H. Matsuda, T. Matsushita
Organizer
Local 3D atomic and electronic structure imaging of functionally active sites (VUVX016 satellite symposium)
Place of Presentation
Univ. Zurich, Switzerland
Year and Date
2016-06-30
Related Report
Int'l Joint Research
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[Presentation] 二次元光電子分光による,WドープZnO半導体の表面構造解析2016
Author(s)
深見駿, 鈴木拓, 安達裕, 渡邉賢, 坂口勲, 田口宗孝, 辻川大地, 吉田泰輔, 橋本雄介, 李美希, 室隆桂之, 松下智裕, 松井文彦, 大門寛
Organizer
日本物理学会第71回年次大会
Place of Presentation
東北学院大学(宮城県仙台市)
Year and Date
2016-03-19
Related Report
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[Presentation] 3D Atomic Structure Imaging of Graphene and Graphite Intercalated Superconductors by Photoelectron Holography2015
Author(s)
Fumihiko Matsui, Saki Nishiyama, Kenji Sugita, Eri Uesugi, Ritsuko Eguchi, Hidenori Goto, Hirosuke Matsui, Naoyuki Maejima, Hiroaki Nishikawa, Tomohiro Matsushita, Yoshihiro Kubozono
Organizer
10th International Symposium on Atomic Level Characterizations for New Materials and Devices ’15
Place of Presentation
くにびきメッセ(島根県松江市)
Year and Date
2015-10-25
Related Report
Int'l Joint Research
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[Presentation] 二次元光電子分光によるBaFe2As2の電子状態解析2015
Author(s)
滝沢優, 橋本由介, 辻川大地, 深見駿, 吉田泰輔, 前島尚行, 松田博之, 北川哲, 田口宗孝, 松井文彦, 大門寛, 大串研也
Organizer
日本物理学会2015年秋季大会
Place of Presentation
関西大学(大阪府吹田市)
Year and Date
2015-09-16
Related Report
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[Presentation] Circular dichroism in resonant Auger electron diffraction: Principle and Applications2015
Author(s)
Fumihiko Matsui, Naoyuki Maejima, Hirosuke Matsui, Hiroaki Nishikawa, Hiroshi Daimon, Tomohiro Matsushita, Matthias Muntwiler, Roland Stania, Thomas Greber
Organizer
588. WE-Heraeus-Seminar on 'Element Specific Structure Determination in Materials on Nanometer and Sub-Nanomeber Scales using modern X-Ray andNuetron Techniques'
Place of Presentation
Physikzentrum Bad Honnef, Germany
Year and Date
2015-04-26
Related Report
Int'l Joint Research
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[Presentation] Selective Detection of Angular Momentum Polarized Auger Electron by Atomic Stereography2014
Author(s)
Fumihiko Matsui, Takuya Ohta, Naoyuki Maejima, Hirosuke Matsui, Hiroaki Nishikawa, Hiroshi Daimon, Tomohiro Matsushita, Thomas Greber, Roland Stania, Rasmus Westerstrom, Matthias Muntwiler, Jun Zhang
Organizer
International Conference on Structure of Surface
Place of Presentation
Coventry, U.K.
Year and Date
2014-07-21 – 2014-07-25
Related Report
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