| Budget Amount *help |
¥10,140,000 (Direct Cost: ¥7,800,000、Indirect Cost: ¥2,340,000)
Fiscal Year 2015: ¥1,430,000 (Direct Cost: ¥1,100,000、Indirect Cost: ¥330,000)
Fiscal Year 2014: ¥3,510,000 (Direct Cost: ¥2,700,000、Indirect Cost: ¥810,000)
Fiscal Year 2013: ¥5,200,000 (Direct Cost: ¥4,000,000、Indirect Cost: ¥1,200,000)
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| Outline of Final Research Achievements |
In this study, we tried to produce silicon carbide (SiC) films on Si substrates using an ion beam induced chemical vapor deposition (IBICVD) technique. Both methylsilane gas (1.2 sccm) and Ar ion beam (100 eV, 0.005 mA) were simultaneously introduced onto Si substrates. A SiC thin film was formed by the simultaneous introduction of methylsilane and Ar ions onto the Si substrate when the substrate temperature was 600 °C. We conclude that the IBICVD technique with methylsilane is useful for SiC film formation on Si at relatively low substrate temperatures.
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