| Budget Amount *help |
¥17,420,000 (Direct Cost: ¥13,400,000、Indirect Cost: ¥4,020,000)
Fiscal Year 2015: ¥3,770,000 (Direct Cost: ¥2,900,000、Indirect Cost: ¥870,000)
Fiscal Year 2014: ¥5,460,000 (Direct Cost: ¥4,200,000、Indirect Cost: ¥1,260,000)
Fiscal Year 2013: ¥8,190,000 (Direct Cost: ¥6,300,000、Indirect Cost: ¥1,890,000)
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| Outline of Final Research Achievements |
Toward the improvement of conversion efficiency and the reduction of production cost of solar cell, we have achieved the formation of nanowire Si (NW-Si) film by atmospheric pressure plasma enhanced chemical transport technique which can chemically prepare the Si film without toxic and dangerous source gases, such as SiH4. In particular, it was founded that the type of catalyst metal, the suppression of atomic hydrogen etching, and the optimization of Si precursor flux are required to prepare the NW-Si film in the high density hydrogen plasma. Furthermore, the formation of NW-Si film from metallurgical Si source was achieved by remote type plasma enhanced chemical transport technique.
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