| Project/Area Number |
25289017
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Production engineering/Processing studies
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| Research Institution | Kyushu University (2014-2015)
Osaka University (2013) |
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Principal Investigator |
Hayashi Terutake 九州大学, 工学(系)研究科(研究院), 准教授 (00334011)
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| Co-Investigator(Kenkyū-buntansha) |
高谷 裕浩 大阪大学, 工学(系)研究科(研究院), 教授 (70243178)
道畑 正岐 大阪大学, 工学(系)研究科(研究院), 助教 (70588855)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥18,720,000 (Direct Cost: ¥14,400,000、Indirect Cost: ¥4,320,000)
Fiscal Year 2015: ¥4,030,000 (Direct Cost: ¥3,100,000、Indirect Cost: ¥930,000)
Fiscal Year 2014: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2013: ¥8,840,000 (Direct Cost: ¥6,800,000、Indirect Cost: ¥2,040,000)
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| Keywords | フェムト秒レーザー / 表面励起加工 / コヒーレントフォノン / コヒーレント励起 / インコヒーレント励起 / アブレーション / パルストレイン / ダブルパルス / 表面励起 / レーザー加工 / ダメージレス加工 / 表面加工 / ナノ加工 / レーザーアブレーション / パルストレインビーム / レーザーアブレ－ション |
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| Outline of Final Research Achievements |
A novel surface processing method is proposed and investigated the fundamental phenomena for processing the localized incoherent and coherent photo excited field. A novel surface processing method is proposed to process the semiconductor target with stimulation by a pulse train beam, which has several peak within their time duration in a few pico second. After first peak is irradiated, a incoherent plasma or a coherent lattice excitation is instantly stimulated on the target. The author consider a surface processing procedure using the low fluence laser beam to process the photo excited surface. In order to verify the feasibility of the proposed method, we investigate the surface morphorolgy on the semiconductor target when the double pulse beam is irradiated with interval from 10 ps to 100 ps. The time resolved observation of surface morphology is performed to understand the fundamental process for low fluence beam processing on the localized thermaly excited surface.
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