| Budget Amount *help |
¥16,250,000 (Direct Cost: ¥12,500,000、Indirect Cost: ¥3,750,000)
Fiscal Year 2015: ¥3,640,000 (Direct Cost: ¥2,800,000、Indirect Cost: ¥840,000)
Fiscal Year 2014: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2013: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
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| Outline of Final Research Achievements |
Bismuth telluride thin films were made by using vacuum arc plasma deposition method. Bismuth telluride film with 10nm thickness was deposited on glass substrate heated at 200℃ during the deposition process. The thermoelectric properties of the films were measured, and the maximum Seebeck coefficient was 167 microW/K. The Seebeck coefficient was increased when the film thickness was decreased. However, the increase of the Seebeck coefficient can be explained well by classical carrier transport model. The measured ZT was only 0.5 at 300K. It was lower than the expected value of a low dimensional Bismuth telluride film. We demonstrated fabrication of nano-wire of Bismuth telluride by depositing the film on a nano-structured substrate. The Bismuth telluride nano-wire with 50nm diameter was fabricated successfully.
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