| Budget Amount *help |
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2015: ¥3,900,000 (Direct Cost: ¥3,000,000、Indirect Cost: ¥900,000)
Fiscal Year 2014: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2013: ¥8,710,000 (Direct Cost: ¥6,700,000、Indirect Cost: ¥2,010,000)
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| Outline of Final Research Achievements |
Towards the higher sensitivity of ion-sensitive field-effect transistors (ISFETs) on nitride semiconductors, the porous-gate ISFETs has been proposed and its basic technology was established. The porous structures with a high-aspect ratio having a several 10 nm-diameter were successfully formed in a controlled fashion utilizing the electrochemical oxidation and etching process. It was found that the unique features of porous structures such as a large surface area and a modified potential involved with a high-electric field are very effective to detect the photo-electrochemical reactions with high-sensitivity. The correlation between the ion-diffusion in the pores and charging and discharging to the double layer were discussed on the basis of the experimental and theoretical results, leading to the new finding for the high-speed and high-sensitive chemical sensors.
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