| Project/Area Number |
25289081
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Ibaraki University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
ITAKURA MASARU 九州大学, 総合理工学研究科, 准教授 (20203078)
ISODA YUKIHIRO 物質・材料研究機構, 電池材料ユニット, 主任研究員 (80354140)
ESAKA FUMITAKA 日本原子力研究開発機構, 原子力基礎工学研究部門, 研究主幹 (40354865)
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| Co-Investigator(Renkei-kenkyūsha) |
SHIOMI JUNICHIRO 東京大学, 工学研究科, 准教授 (40451786)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥17,680,000 (Direct Cost: ¥13,600,000、Indirect Cost: ¥4,080,000)
Fiscal Year 2015: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2014: ¥4,940,000 (Direct Cost: ¥3,800,000、Indirect Cost: ¥1,140,000)
Fiscal Year 2013: ¥8,580,000 (Direct Cost: ¥6,600,000、Indirect Cost: ¥1,980,000)
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| Keywords | シリサイド半導体 / Mg2Si / MnSi1.7 / 熱電変換 / バルクナノ構造 / MnSi1.75 / ナノ構造 |
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| Outline of Final Research Achievements |
Semiconducting Silicides (Mg2Si and MnSi1.7) have been attracted much attention as suitable thermoelectric (TE) materials used for the waste-heat recovery in the middle temperature range（500～900K）because they consist of abundant and non-toxic elements.
In order to develop a higher ZT of n-Mg2Si and p-MnSi1.7 crystals, we have investigated the synthesis of the semiconducting silicides with nano-structures (precipitates and modulations of impurity and defect) and their TE properties. We found that dopants of only 0.5at%-Bi and 1at%-Sb affect to decrease the lattice thermal conductivity of melt-grown Mg2Si by approximately 38% and 40%, respectively. We have also succeeded in fabricating impurity segregations, which size of in the order of nanometer to micrometer, in n-Mg2Si and p-MnSi1.7 by temperature modulation growth.
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