| Budget Amount *help |
¥16,640,000 (Direct Cost: ¥12,800,000、Indirect Cost: ¥3,840,000)
Fiscal Year 2015: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2014: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2013: ¥7,410,000 (Direct Cost: ¥5,700,000、Indirect Cost: ¥1,710,000)
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| Outline of Final Research Achievements |
Film growth and control of carrier concentration of hydrogenated amorphous carbon (a-C:H) has been studied to develop a new semiconductor material characterized by abundance of its source material and no toxicity. The a-C:H was deposited by reactive plasma deposition method. The effect of F and Ca doping into a-C:H was examined referring to the results of Ag or Ca doping into fullerene, bathocuproine and so on where the electrical resistivity significantly changed by the doping. P and n type a-C:H were obtained by F and Ca doping, and the lowest resistivity obtained were 1x10E0Ωｃｍ with the carrier concentration of 1x10E19cm-3, and 1.0x10E-2Ωｃｍ with 1x10E20cm-3, respectively.
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