Crystal symmetry breaking of oxide quantum well interfaces and polarized light-electric conversions
| Project/Area Number |
25289084
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | The University of Tokyo |
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Principal Investigator |
Matsui Hiroaki 東京大学, 工学(系)研究科(研究院), 講師 (80397752)
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| Co-Investigator(Kenkyū-buntansha) |
HASUIKE Noriyuki 京都工芸繊維大学, 大学院工芸研究科, 助教 (40452370)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2014: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2013: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
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| Keywords | 非極性 / ZnO / 偏光性 / 光電変換機能 / 紫外領域 / 格子歪 / 量子井戸 / 酸化物半導体 / 偏光機能 / 光電機能 / 光子歪 / 偏光光学 / 紫外 / 結晶対称性 / 光電ｊ変換 / 酸化物 |
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| Outline of Final Research Achievements |
In this work, we focus on an oxide semiconductor (nonpolar ZnO) with both semiconducting and dielectric characteristics, and realize a high optical anisotropy and a light-electric conversion based on polarization and electronic band control. We succeeded introduce anisotropic lattice strains in the samples on the basis of electronic band calculations derived from the k-p perturbation method, and obtained nonpolar ZnO thin films with high anisotropy in the in-plane optical transitions. In addition, we fabricated ZnO/MgxZn1-xO quantum wells that were introduced strong lattice strains at an interface between well and barrier layers. As a result, we realized high light-electric conversion of 15%, which contributes to applications for optical detection devices of light polarizations in the ultra-violet region.
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Report
(4 results)
Research Products
(35 results)
