| Budget Amount *help |
¥15,340,000 (Direct Cost: ¥11,800,000、Indirect Cost: ¥3,540,000)
Fiscal Year 2015: ¥2,340,000 (Direct Cost: ¥1,800,000、Indirect Cost: ¥540,000)
Fiscal Year 2014: ¥8,320,000 (Direct Cost: ¥6,400,000、Indirect Cost: ¥1,920,000)
Fiscal Year 2013: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
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| Outline of Final Research Achievements |
In this work, we focus on an oxide semiconductor (nonpolar ZnO) with both semiconducting and dielectric characteristics, and realize a high optical anisotropy and a light-electric conversion based on polarization and electronic band control. We succeeded introduce anisotropic lattice strains in the samples on the basis of electronic band calculations derived from the k-p perturbation method, and obtained nonpolar ZnO thin films with high anisotropy in the in-plane optical transitions. In addition, we fabricated ZnO/MgxZn1-xO quantum wells that were introduced strong lattice strains at an interface between well and barrier layers. As a result, we realized high light-electric conversion of 15%, which contributes to applications for optical detection devices of light polarizations in the ultra-violet region.
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