| Budget Amount *help |
¥17,160,000 (Direct Cost: ¥13,200,000、Indirect Cost: ¥3,960,000)
Fiscal Year 2015: ¥1,950,000 (Direct Cost: ¥1,500,000、Indirect Cost: ¥450,000)
Fiscal Year 2014: ¥7,280,000 (Direct Cost: ¥5,600,000、Indirect Cost: ¥1,680,000)
Fiscal Year 2013: ¥7,930,000 (Direct Cost: ¥6,100,000、Indirect Cost: ¥1,830,000)
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| Outline of Final Research Achievements |
Compact and high power semiconductor lasers are key components in various scientific and industrial instruments including laser displays and fluorescence analysis systems such as confocal microscopes and flow cytometers. The temperature rise of the active region in the high power semiconductor lasers strongly affects the threshold and output power characteristics and causes degradation of the lasers exponentially. Thus, efficient heat dissipation and thermal management are highly important.
In this study, we have developed a direct bonding method and a bonding method using a smooth gold thin-film interlayer (root-mean-square roughness < 0.5 nm) for GaAs/SiC heterogeneous integration. The improved heat dissipation structure for high power semiconductor lasers was demonstrated in the wafer scale at room temperature.
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