Diamond Junction Field-Effct Transistors for Low-Loss Power Device Applications

• Project/Area Number: 25289086
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: Tokyo Institute of Technology
• Principal Investigator: Hatano Mutsuko 東京工業大学, 工学院, 教授 (00417007)
• Co-Investigator(Kenkyū-buntansha): 岩崎 孝之 東京工業大学, 理工学研究科, 助教 (80454031)
• Project Period (FY): 2013-04-01 – 2017-03-31
• Project Status: Completed (Fiscal Year 2016)
• Budget Amount: ¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000); Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000); Fiscal Year 2014: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000); Fiscal Year 2013: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
• Keywords: 電子・電気材料

Outline of Final Research Achievements

Low power loss power devices greatly contribute to a global environmental energy issues. Diamond semiconductor is an attractive material for next-generation power devices due to its wide band-gap, high breakdown field, and high thermal conductivity. By selective n+-type diamond growth, diamond junction field effect transistors (JFETs) were obtained and we confirmed the superior performances of low on resistance (< 5 mΩcm2) and high electric filed (> 5 MV/cm). To increase the on- current, we proposed bipolar-mode operation of the JFETs. We achieved 4-9 times higher drain currents in the bipolar-mode compared with the unipolar-mode operation at a DC current gain of 10. Furthermore, the bipolar-mode currents at the high temperatures of 473 and 573 K became two orders of magnitude larger than the unipolar-mode current at room temperature with a large DC current gain of 102.the bipolar-mode operation in up to 573 K.

Research Products

• [Int'l Joint Research] フランフォーファー研究所(ドイツ)
• [Int'l Joint Research] NEEL研究所(フランス)
• [Int'l Joint Research] ハッセルト大学(ベルギー)
• [Int'l Joint Research] 南フロリダ大学(米国)
• [Journal Article] The Influence of High Power-Density Plasma on Heteroepitaxial Diamond Nucleation on 3C-SiC Surface (2017)
  • Author(s): J. Yaita, M. Natal, S. E. Saddow, M. Hatano, T. Iwasaki
  • Journal Title: Applied Physics Express Volume: 10
  • NAID: 210000135821
  • Peer Reviewed / Int'l Joint Research
• [Journal Article] Highly oriented diamond (111) films synthesized by pulse bias-enhanced nucleation and epitaxial grain selection on a 3C-SiC-Si (111) substrate (2017)
  • Author(s): T. Suto, J. Yaita, T. Iwasaki, M. Hatano
  • Journal Title: Appl. Phys. Lett. Volume: 110 Issue: 6 Pages: 062102-062102
  • DOI: 10.1063/1.4975630
  • Peer Reviewed
• [Journal Article] Formation of perfectly aligned nitrogen-vacancy-center ensembles in chemical-vapor-deposition-grown diamond (111) (2017)
  • Author(s): Hayato Ozawa, Kosuke Tahara, Hitoshi Ishiwata, Mutsuko Hatano and Takayuki Iwasaki
  • Journal Title: Applied Physics Express Volume: 10 Issue: 4 Pages: 045501-045501
  • DOI: 10.7567/apex.10.045501
  • Peer Reviewed
• [Journal Article] Direct Nanoscale Sensing of the Internal Electric Field in Operating Semiconductor Devices Using a Single Electron Spins (2017)
  • Author(s): T. Iwasaki, W. Naruki, K. Tahara, T. Makino, H. Kato, M. Ogura, D.Takeuchi, S. Yamasaki, M. Hatano
  • Journal Title: ACS Nano Volume: 11 Issue: 2 Pages: 1238-1245
  • DOI: 10.1021/acsnano.6b04460
  • Peer Reviewed
• [Journal Article] High-Temperature Bipolar-Mode Operation of Normally-Off Diamond JFETIEEE Journal of the Electron Devices Society (2017)
  • Author(s): T. Iwasaki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Hatano
  • Journal Title: IEEE Journal of the Electron Devices Society Volume: 5 Issue: 1 Pages: 95-99
  • DOI: 10.1109/jeds.2016.2624301
  • Peer Reviewed / Open Access
• [Journal Article] Charge state modulation of nitrogen vacancy centers in diamond by applying a forward voltage across a p-i-n junction (2016)
  • Author(s): M. Shimizu, T. Makino, T. Iwasaki, J. Hasegawa, K. Tahara, W. Naruki, H. Kato, S. Yamasaki, M. Hatano
  • Journal Title: Diamond Relat. Mater. Volume: 63 Pages: 192-196
  • DOI: 10.1016/j.diamond.2015.10.022
• [Journal Article] Normally-Off Diamond Junction Field-Effect Transistors With Submicrometer Channel (2016)
  • Author(s): Taisuke Suwa, Takayuki Iwasaki, Kazuki Sato, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Satoshi Yamasaki, Mutsuko Hatano
  • Journal Title: IEEE ELECTRON DEVICE LETTERS Volume: 37 Issue: 2 Pages: 209-211
  • DOI: 10.1109/led.2015.2513074
  • Peer Reviewed / Open Access / Acknowledgement Compliant
• [Journal Article] Quantifying selective alignment of ensemble nitrogen-vacancy centers in (111) diamond (2015)
  • Author(s): K. Tahara, H. Ozawa, T. Iwasaki, N. Mizuochi, M. Hatano
  • Journal Title: Applied Physics Letters Volume: 107 Issue: 19 Pages: 1-4
  • DOI: 10.1063/1.4935709
  • Peer Reviewed / Open Access / Int'l Joint Research
• [Journal Article] Improvement of fluorescence intensity of nitrogen vacancy centers in self-formed diamond microstructures (2015)
  • Author(s): S. Furuyama, K. Tahara, T. Iwasaki, M. Shimizu, J. Yaita, M. Kondo, T. Kodera, and M. Hatano
  • Journal Title: Applied Physics Letters Volume: 107 Issue: 16 Pages: 163102-163102
  • DOI: 10.1063/1.4933103
  • Peer Reviewed / Open Access
• [Journal Article] Fabrication of diamond lateral p&#8211;n junction diodes on (111) substrates (2015)
  • Author(s): K.Sato, T.Iwasaki, M.Shimizu, H. Kato, T. Makno, M. Ogura, D.Takeuchi, S. Yamasaki, M. hatano
  • Journal Title: Physica Status Solidi A Volume: 212 Issue: 11 Pages: 2548-2552
  • DOI: 10.1002/pssa.201532266
  • Peer Reviewed / Open Access
• [Journal Article] Germanium-Vacancy Single Color Centers in Diamond (2015)
  • Author(s): T. Iwasaki, F. Ishibashi, Y. Miyamoto, Y. Doi, S. Kobayashi, T. Miyazaki, K. Tahara, K. Jahnke, L. Rogers, B. Naydenov, F. Jelezko, S. Yamasaki, S. Nagamachi, T. Inubushi, N. Mizuochi, M. Hatano
  • Journal Title: Scientific Reports Volume: 5 Issue: 1 Pages: 12882-12882
  • DOI: 10.1038/srep12882
  • Peer Reviewed / Open Access
• [Journal Article] hotoelectrochemical CO2 reduction on 3C-SiC photoanode in aqueous solution (2015)
  • Author(s): J. Yaita, T. Iwasaki, M. Natal, M. Hatano
  • Journal Title: Japanese Journal of Applied Physics Volume: 54 Issue: 4S Pages: 04DH13-04DH13
  • DOI: 10.7567/jjap.54.04dh13
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] Atomistic mechanism of perfect alignment of nitrogen-vacancy centers in diamond (2014)
  • Author(s): T. Miyazaki, Y. Miyamoto, T. Makino, H. Kato, S. Yamasaki, T. Fukui, Y. Doi, N.Tokuda, M. Hatano and N. Mizuochi
  • Journal Title: Appl. Phys. Lett. Volume: 104 Issue: 26
  • DOI: 10.1063/1.4904988
  • Peer Reviewed
• [Journal Article] Analysis of Selective Growth of n-Type Diamond in Lateral pn Junction Diode (2014)
  • Author(s): K. Sato, T. Iwasaki, H. Kato, T. Makino, M. Ogura, S. Yamasaki, S. Nakamura, K. Ichikawa, A. Sawabe, M. Hatano
  • Journal Title: Japanese Journal of Applied Physics Volume: 53 Issue: 5S1 Pages: 05FP01-05FP01
  • DOI: 10.7567/jjap.53.05fp01
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] 600 V Diamond Junction Field-Effect Transistors Operated at 200 °C (2014)
  • Author(s): Takayuki Iwasaki, Junya Yaita, Hiromitsu Kato, Toshiharu Makino, Masahiko Ogura,Daisuke Takeuchi, Hideyo Okushi, Satoshi Yamasaki, Mutsuko Hatano
  • Journal Title: IEEE Electron Device Lett Volume: 35 Issue: 2 Pages: 241-243
  • DOI: 10.1109/led.2013.2294969
  • Peer Reviewed / Acknowledgement Compliant
• [Journal Article] High-Temperature Operation of Diamond Junction Field-Effect Transistors With Lateral p-n Junctions (2013)
  • Author(s): Takayuki Iwasaki, Yuto Hoshino, KoheiTsuzuki, Hiomitsu Kato, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Hideyo Okushi, SatoshiYamasaki, Mutsuko Hatano,
  • Journal Title: IEEE Electron Device Lett. Volume: 34 Issue: 9 Pages: 1175-1177
  • DOI: 10.1109/led.2013.2271377
  • Peer Reviewed / Acknowledgement Compliant
• [Presentation] NV Ensemble Diamond Device Technologies for Quantum Sensing Applications (2017)
  • Author(s): M.Hatano
  • Organizer: 2017 MRS Spring meeting & Exhibit
  • Place of Presentation: フェニックス（米国）
  • Year and Date: 2017-04-20
  • Int'l Joint Research / Invited
• [Presentation] 高酸素濃度成長を用いたSi(111)上高配向ダイヤ膜の合成 (2017)
  • Author(s): 須藤建瑠、桑原新之介、矢板潤也、岩崎孝之、波多野睦子
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜(神奈川県横浜市）
  • Year and Date: 2017-03-15
• [Presentation] In-Site Temperature Measurement of Diamond Devices using NV Centers (2017)
  • Author(s): R. Amici, T. Iwasaki, T. Makino, H. Kato, M. Ogura, D. Takeuchi, S. Yamasaki, M. Hatano
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜(神奈川県横浜市）
  • Year and Date: 2017-03-15
• [Presentation] 広視野高感度表面磁気計測に向けた高配向NVセンタデルタドープ薄膜の形成 (2017)
  • Author(s): 中島誠人、石綿整、岩崎孝之、波多野睦子
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜(神奈川県横浜市）
  • Year and Date: 2017-03-14
• [Presentation] NMRイメージングに向けたアンサンブルNVセンタによる広視野ダイナミカルデカップリング (2017)
  • Author(s): 水野皓介、田原康佐、石綿整、中島誠人、岩崎孝之、波多野睦子
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜(神奈川県横浜市）
  • Year and Date: 2017-03-14
• [Presentation] NVセンターによるパワーデバイス内部電界の定量計測 (2017)
  • Author(s): 岩崎孝之、成木航、田原康佐、ヘナト アミチ、牧野俊晴、加藤宙光、小倉政彦、竹内大輔、山崎聡、波多野睦子
  • Organizer: 第64回応用物理学会春季学術講演会
  • Place of Presentation: パシフィコ横浜(神奈川県横浜市）
  • Year and Date: 2017-03-13
• [Presentation] High-Quality Heteroepitaxial Diamond Films Grown on 3C-SiC/Si Substrates (2017)
  • Author(s): J. Yaita, T. Iwasaki, M. Natal, S. E. Saddow, M. Hatano
  • Organizer: Hasselt Diamond Workshop 2017
  • Place of Presentation: ハッセルト（ベルギー）
  • Year and Date: 2017-03-08
  • Int'l Joint Research
• [Presentation] Scaling Laws for the Dislocation Reduction in Heteroepitaxial Diamond Films on 3C-SiC/Si Substrates (2016)
  • Author(s): J. Yaita, T. Iwasaki, M. Natal, S. E. Saddow, M. Hatano
  • Organizer: The Fifth International Education Forum on Environment and Energy Science(ACEEES)
  • Place of Presentation: サンディエゴ（米国）
  • Year and Date: 2016-12-16
  • Int'l Joint Research
• [Presentation] Very Narrow Linewidths in the Fluorescence from Germanium-Vacancy Centers in Nanodiamonds (2016)
  • Author(s): Yusuke Shimamoto, Takeru Suto, Hayato Ozawa, Mutsuko Hatano, Shunri Oda, Takayuki Iwasaki
  • Organizer: 2016 MRS Fall Meeting & Exhibit
  • Place of Presentation: ボストン（米国）
  • Year and Date: 2016-12-02
  • Int'l Joint Research
• [Presentation] Towards Deterministic CVD Formation of Quantum Emitters in Diamond (2016)
  • Author(s): Takayuki Iwasaki, Mutsuko Hatano
  • Organizer: 2016 MRS Fall Meeting & Exhibit
  • Place of Presentation: ボストン（米国）
  • Year and Date: 2016-11-30
  • Int'l Joint Research
• [Presentation] Control of internal stress of selectively-aligned NV ensemble diamond film for higher contrast of magnetic resonance (2016)
  • Author(s): Hayato Ozawa, Kosuke Tahara, Hitoshi Ishiwata, Takayuki Iwasaki, Mutsuko Hatano
  • Organizer: 2016 MRS Fall Meeting & Exhibit
  • Place of Presentation: ボストン（米国）
  • Year and Date: 2016-11-29
  • Int'l Joint Research
• [Presentation] Heteroepitaxial Growth of Highly-Oriented Diamond Films on 3C-SiC / Si (111) Substrates by Pulse Bias Enhanced Nucleation (2016)
  • Author(s): Takeru Suto, Junya Yaita , Takayuki Iwasaki , Mutsuko Hatano
  • Organizer: 2016 MRS Fall Meeting & Exhibit
  • Place of Presentation: ボストン（米国）
  • Year and Date: 2016-11-28
  • Int'l Joint Research
• [Presentation] パルスバイアス核形成および選択的エッチング効果を用いた3C-SiC/Si上への(111)高配向ダイヤモンドの合成 (2016)
  • Author(s): 須藤建瑠，矢板潤也，岩崎孝之，波多野睦子
  • Organizer: 第30回ダイヤモンドシンポジウム
  • Place of Presentation: 東京大学駒場リサーチキャンパス（東京都）
  • Year and Date: 2016-11-16
• [Presentation] Selectively-aligned high density NV center ensemble in (111) diamond : from CVD-growth to sensing application (2016)
  • Author(s): Kosuke Tahara, Hayato Ozawa, Hitoshi Ishiwata, Takayuki Iwasaki, Mutsuko Hatano
  • Organizer: 2016 E-MRS Fall Meeting
  • Place of Presentation: ワルシャワ（ポーランド）
  • Year and Date: 2016-09-21
  • Int'l Joint Research / Invited
• [Presentation] Diamond Electronics (2016)
  • Author(s): Mutsuko Hatano, Takayuki Iwasaki, Satoshi Yamasaki, Toshiharu Makino
  • Organizer: ESSCIRC-ESSDERC 2016
  • Place of Presentation: ローザンヌ（スイス）
  • Year and Date: 2016-09-14
  • Int'l Joint Research / Invited
• [Presentation] 高密度プラズマを用いた3C-SiC/Si上のダイヤモンドヘテロエピタキシャル成長及び欠陥評価 (2016)
  • Author(s): 矢板潤也、岩崎孝之、Meralys Natal、S. E. Saddow, 波多野睦子
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県新潟市）
  • Year and Date: 2016-09-14
• [Presentation] 3C-SiC(111)/Si(111)上への高配向ダイヤモンドのヘテロエピタキシャル成長 (2016)
  • Author(s): 須藤 建瑠, 矢板 潤也, 岩崎 孝之, 波多野 睦子
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県新潟市）
  • Year and Date: 2016-09-14
  • Invited
• [Presentation] 交流磁場のイメージング計測に向けたマイクロ波アンテナの評価 (2016)
  • Author(s): 水野皓介、田原康佐、岩崎孝之、波多野睦子
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県新潟市）
  • Year and Date: 2016-09-13
• [Presentation] 光検出磁気共鳴によるダイヤモンドＮＶアンサンブル膜中のストレス測定とその制御 (2016)
  • Author(s): 小澤勇斗、田原康佐、石綿整、岩崎孝之、波多野睦子
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県新潟市）
  • Year and Date: 2016-09-13
• [Presentation] ナノダイヤモンド中に形成したGeVセンターからの単一光子放出 (2016)
  • Author(s): 島本祐輔、須藤建瑠、波多野睦子、小田俊理、岩崎孝之
  • Organizer: 第77回応用物理学会秋季学術講演会
  • Place of Presentation: 朱鷺メッセ（新潟県新潟市）
  • Year and Date: 2016-09-13
• [Presentation] High performance quantum sensor system with diamond NV centers for scalable applications (2016)
  • Author(s): M. Hatano
  • Organizer: 2016 Germany-Japan Workshop on Nanoscale Electron-Photon Interactions via Energy Dissipation and Fluctuation
  • Place of Presentation: ウルム（ドイツ）
  • Year and Date: 2016-08-01
  • Int'l Joint Research / Invited
• [Presentation] Germanium-Vacancy Quantum Emitters in Diamond (2016)
  • Author(s): Takayuki Iwasaki, Mutsuko Hatano
  • Organizer: 2016 Germany-Japan Workshop on Nanoscale Electron-Photon Interactions via Energy Dissipation and Fluctuation
  • Place of Presentation: ウルム（ドイツ）
  • Year and Date: 2016-08-01
  • Int'l Joint Research
• [Presentation] Magnetometry using selectively-aligned and high-density NV center ensemble in CVD-grown (111) diamond (2016)
  • Author(s): Kosuke Tahara, Hayato Ozawa, Takayuki Iwasaki , Mutsuko Hatano
  • Organizer: 2016 Germany-Japan Workshop on Nanoscale Electron-Photon Interactions via Energy Dissipation and Fluctuation
  • Place of Presentation: ウルム（ドイツ）
  • Year and Date: 2016-08-01
  • Int'l Joint Research
• [Presentation] Growth Temperature Dependence of Nitrogen Doped Diamonds for Selectively Aligned NV ensemble (2016)
  • Author(s): Hayato Ozawa, Kosuke Tahara, Hitoshi Ishiwata, Takayuki Iwasaki, Mutsuko Hatano
  • Organizer: 2016 Germany-Japan Workshop on Nanoscale Electron-Photon Interactions via Energy Dissipation and Fluctuation
  • Place of Presentation: ウルム（ドイツ）
  • Year and Date: 2016-08-01
  • Int'l Joint Research
• [Presentation] ダイヤモンド量子センシング－ナノエレ,ライフ,量子物理の融合による価値創出を目指して (2016)
  • Author(s): 波多野 睦子
  • Organizer: 生物学・光源・物性研究者による量子生物学合宿勉強会
  • Place of Presentation: 大型放射光施設（SPring-8）・萌光館（量子科学技術研究開発機構・放射光物性研究棟付属健家）(兵庫県佐用郡）
  • Year and Date: 2016-07-12
  • Invited
• [Presentation] Diamond Junction Field-Effect Transistors for Low-Loss Power Electronics (2016)
  • Author(s): T.Iwasaki, M.Hatano
  • Organizer: ISCSI-VII/ISTDM 2016
  • Place of Presentation: Nagoya University(Japan)
  • Year and Date: 2016-06-08
  • Int'l Joint Research / Invited
• [Presentation] Diamond Junction Field-Effect Transistors for Low-Loss Power Electronics (2016)
  • Author(s): T.Iwasaki, M.Hatano
  • Organizer: 2016 MRS Spring Meeting & Exhibit
  • Place of Presentation: フェニックス（米国）
  • Year and Date: 2016-03-31
  • Int'l Joint Research / Invited
• [Presentation] バイポーラモード動作ノーマリオフダイヤモンド JFETの高温特性 (2016)
  • Author(s): 岩崎 孝之, 加藤 宙光, 牧野 俊晴, 小倉 政彦, 竹内 大輔, 山崎 聡, 波多野 睦子
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス（東京）
  • Year and Date: 2016-03-20
• [Presentation] 縦型ダイヤモンドJFETの作製 (2016)
  • Author(s): 諏訪 泰介, 岩崎 孝之, 加藤 宙光, 牧野 俊晴, 小倉 政彦, 竹内 大輔, 山﨑 聡, 波多野 睦子
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス（東京）
  • Year and Date: 2016-03-20
• [Presentation] パルスバイアス核形成法を用いた3C-SiC(111)/Si(111)上への高配向ダイヤモンドの合成 (2016)
  • Author(s): 須藤 建瑠, 矢板 潤也, 岩崎 孝之, 波多野 睦子
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス（東京）
  • Year and Date: 2016-03-20
• [Presentation] 高密度プラズマによる3C-SiC/Si上のダイヤモンド核配向性の向上 (2016)
  • Author(s): 矢板潤也, 岩崎孝之, Meralys Reyes Nata, Stephen E. Saddow, 波多野睦子
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス（東京）
  • Year and Date: 2016-03-20
• [Presentation] 高配向・高密度NVセンタアンサンブルを用いた交流磁場測定 (2016)
  • Author(s): 田原 康佐, 小澤 勇斗, 岩崎 孝之, 波多野 睦子
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス（東京）
  • Year and Date: 2016-03-19
• [Presentation] ダイヤモンド中のNVセンタを用いた静磁場イメージング (2016)
  • Author(s): 水野 皓介、田原 康佐、成木 航、岩崎 孝之 、関口 武治、原田 慶恵、波多野 睦子
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス（東京）
  • Year and Date: 2016-03-19
• [Presentation] CVDダイヤモンドの成長モード制御による高配向NVセンターの高密度化 (2016)
  • Author(s): 小澤勇斗、田原康佐、岩崎孝之、石綿整、波多野睦子
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス（東京）
  • Year and Date: 2016-03-19
• [Presentation] NVセンターを用いたダイヤモンドデバイス内部電界の検出 (2016)
  • Author(s): 成木 航, 岩崎 孝之, 田原 康佐, 加藤 宙光, 牧野 俊晴, 小倉 政彦, 竹内 大輔, 山崎 聡,波多野 睦子
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東京工業大学大岡山キャンパス（東京）
  • Year and Date: 2016-03-19
• [Presentation] Enhanced AC magnetometry using selectively-aligned and high-density NV center ensemble in CVD-grown (111) diamond (2016)
  • Author(s): K.Tahara, H.Ozawa, T.Iwasaki, M.Hatano
  • Organizer: Hasselt Diamond Workshop 2016
  • Place of Presentation: ハッセルト（ベルギー）
  • Year and Date: 2016-03-10
  • Int'l Joint Research
• [Presentation] Sensing electric-field in diamond power devices using nitrogen-vacancy centers (2016)
  • Author(s): W. Naruki, T. Iwasaki, K. Tahara, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Hatano
  • Organizer: Hasselt Diamond Workshop 2016
  • Place of Presentation: ハッセルト（ベルギー）
  • Year and Date: 2016-03-09
  • Int'l Joint Research
• [Presentation] Improving of Heteroepitaxial Diamond Crystalline for Diamond Power Device Applications (2015)
  • Author(s): J. Yaita, T. Iwasaki, M. Natal, S. E. Saddow, M. Hatano
  • Organizer: The Fourth International Education Forum on Environment and Energy Science
  • Place of Presentation: マウイ（米国）
  • Year and Date: 2015-12-07
  • Int'l Joint Research
• [Presentation] Effect of High Plasma Density on Heteroepitaxial Diamond Nucleation on 3C-SiC/Si Substrates (2015)
  • Author(s): J. Yaita, T. Iwasaki, Meralys R. Natal, Stephen E. Saddow, M. Hatano
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: ボストン(米国）
  • Year and Date: 2015-12-03
  • Int'l Joint Research
• [Presentation] Diamond Semiconductor Devices for Next Generation Power Electronics and Quantum Sensing Applications (2015)
  • Author(s): M. Hatano, T.Iwasaki, S. Yamasaki
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: ボストン(米国）
  • Year and Date: 2015-11-30
  • Int'l Joint Research / Invited
• [Presentation] Germanium-Vacancy Single Color Centers in Diamond (2015)
  • Author(s): T. Iwasaki, F. Ishibashi, Y. Miyamoto, Y.Doi, S.Kobayashi, T.Miyazaki, K. Tahara, K.Jahnke, L.Rogers, B. Naydenov, F. Jelezko, S. Yamasaki, S. Nagamachi, T. Inubushi, N. Mizuochi, M. Hatano
  • Organizer: 2015 MRS Fall Meeting & Exhibit
  • Place of Presentation: ボストン(米国）
  • Year and Date: 2015-11-30
  • Int'l Joint Research
• [Presentation] デバイス特性評価に向けたダイヤモンドp-n接合デバイスへの発光センター形成 (2015)
  • Author(s): 岩崎孝之，成木 航，田原康佐，清水麻希，加藤宙光，牧野俊晴，小倉政彦，竹内大輔，山崎 聡，波多野睦子
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス
  • Year and Date: 2015-11-19
• [Presentation] パルスバイアス核形成による3C-SiC(111)/Si(111)上へのダイヤモンドヘテロエピタキシャル成長 (2015)
  • Author(s): 須藤建瑠，矢板潤也，岩崎孝之，波多野睦子
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス
  • Year and Date: 2015-11-17
• [Presentation] [111]へ選択配向したアンサンブルNVセンターを含むダイヤモンド薄膜合成 (2015)
  • Author(s): 小澤勇斗，田原康佐，岩崎孝之，波多野睦子
  • Organizer: 第29回ダイヤモンドシンポジウム
  • Place of Presentation: 東京理科大学葛飾キャンパス
  • Year and Date: 2015-11-17
• [Presentation] Diamond Electronic for Power Devices and Sensing Applications (2015)
  • Author(s): M.Hatano, T.Iwasaki,, S.Yamasaki
  • Organizer: SSDM2015
  • Place of Presentation: 札幌（日本）
  • Year and Date: 2015-09-29
  • Int'l Joint Research / Invited
• [Presentation] Heteroepitaxial Growth of Diamond on 3C-SiC/Si Substrates by Antenna-Edge Microwave Plasma CVD (2015)
  • Author(s): T.Suto, J.Yaita, T.Iwasaki, M.Natal, S.E.Saddow, M.Hatano
  • Organizer: SSDM2015
  • Place of Presentation: 札幌（日本）
  • Year and Date: 2015-09-29
  • Int'l Joint Research
• [Presentation] Fabrication of Nitrogen-vacancy Centers in Diamond Power Devices for Electric-Field Sensing (2015)
  • Author(s): W.Naruki, K.Tahara, T.Iwasaki, H.Kato, T.Makino, M.Ogura, D.Takeuchi, S.Yamasaki, M.Hatano
  • Organizer: SSDM2015
  • Place of Presentation: 札幌（日本）
  • Year and Date: 2015-09-28
  • Int'l Joint Research
• [Presentation] ダイヤモンド中の単一複合ゲルマニウム- 空孔センター (2015)
  • Author(s): 岩崎 孝之, 石橋 史隆, 宮本 良之, 土井 悠生, 小林 悟士, 宮崎 剛英,田原 康佐, Kay Jahnke , Lachln Rogers, Boris Naydnov, Fedor Jelezko, 山崎 聡, 長町 信治, 犬伏 俊郎,水落 憲和, 波多野 睦子
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（愛知）
  • Year and Date: 2015-09-15
• [Presentation] ダイヤモンド(111)基板中のアンサンブルNVセンタ配向率の定量化 (2015)
  • Author(s): 田原 康佐, 小澤 勇斗, 岩崎 孝之, 波多野 睦子
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（愛知）
  • Year and Date: 2015-09-15
• [Presentation] Selctive alignment of ensemble nitrogen-vacancy centres in CVD-grown (111) diamond (2015)
  • Author(s): K. Tahara, H.Ozawa, T.Iwasaki, M.Hatano
  • Organizer: International Conference on Diamond and Carbon materials
  • Place of Presentation: バードホンブルク（ドイツ）
  • Year and Date: 2015-09-10
  • Int'l Joint Research
• [Presentation] Diamond semiconductor devices for power electronics and quantum sensing applications (2015)
  • Author(s): M.Hatano
  • Organizer: International Conference on Diamond and Carbon materials
  • Place of Presentation: バードホンブルク（ドイツ）
  • Year and Date: 2015-09-09
  • Int'l Joint Research / Invited
• [Presentation] Development of magnetic image sensors based on ensemble nitrogen-vacancy centers in CVD-grown diamond (2015)
  • Author(s): M.Hatano
  • Organizer: Diamond Quantum Sensing Workshop 2015
  • Place of Presentation: 高松（日本）
  • Year and Date: 2015-08-05
  • Int'l Joint Research / Invited
• [Presentation] (111) Diamond Growth for Preferentially Aligned Ensemble NV centers (2015)
  • Author(s): K. Tahara, H. Ozawa, T. Iwasaki, M. Hatano
  • Organizer: Diamond Quantum Sensing Workshop 2015
  • Place of Presentation: 高松（日本）
  • Year and Date: 2015-08-05
  • Int'l Joint Research
• [Presentation] Heteroepitaxial Growth of Diamond on 3C-SiC/Si by Antenna-edge Microwave Plasma CVD (2015)
  • Author(s): T. Suto, J. Yaita, T. Iwasaki, M. Hatano
  • Organizer: Diamond Quantum Sensing Workshop 2015
  • Place of Presentation: 高松（日本）
  • Year and Date: 2015-08-05
  • Int'l Joint Research
• [Presentation] Germanium-Vacancy Single Color Centers in Diamond (2015)
  • Author(s): T. Iwasaki, F. Ishibashi, Y. Miyamoto, Y. Doi, S. Kobayashi, T. Miyazaki, K. Tahara, K. D. Jahnke, L. J. Rogers, B. Naydenov, F. Jelezko, S. Yamasaki, S. Nagamachi, T. Inubushi, N. Mizuochi, M. Hatano
  • Organizer: Diamond Quantum Sensing Workshop 2015
  • Place of Presentation: 高松（日本）
  • Year and Date: 2015-08-05
  • Int'l Joint Research
• [Presentation] Diamond junction FETs with the lateral p-n junctions (2015)
  • Author(s): M.Hatano
  • Organizer: 3rd French-Japanese workshop on diamond power devices
  • Place of Presentation: ニムス（フランス）
  • Year and Date: 2015-07-08
  • Int'l Joint Research / Invited
• [Presentation] Junction FETs and quantum sensing application (2015)
  • Author(s): M.Hatano
  • Organizer: OMNT International Symposium on Diamond
  • Place of Presentation: グルノーブル（フランス）
  • Year and Date: 2015-07-06
  • Int'l Joint Research / Invited
• [Presentation] Improvement of the nucleation density and orientation of diamond nuclei on 3C-SiC/Si Substrates by using high-power density plasma (2015)
  • Author(s): Junya Yaita, T. Iwasaki, M. R.Natal, S.E. Saddow, M.Hatano
  • Organizer: 9th International Conference on New Diamond and Nano Carbons 2015
  • Place of Presentation: 静岡（日本）
  • Year and Date: 2015-05-26
  • Int'l Joint Research
• [Presentation] Diamond Junction Field-Effect Transistors and Heteroepitaxial Growth Toward Large-Size Wafer (2015)
  • Author(s): T.Iwasaki
  • Organizer: CMOSETR 2015
  • Place of Presentation: バンクーバー（カナダ）
  • Year and Date: 2015-05-22
  • Int'l Joint Research / Invited
• [Presentation] Current Enhancement by Conductivity Modulation in Diamond JFETs for Next Generation Low-Loss Power Devices (2015)
  • Author(s): T. Iwasaki, H. Kato, J.Yaita, T. Makino, M. Ogura, D. Takeuchi, H. Okushi, S. Yamasaki, M.Hatano
  • Organizer: he 27th International Symposium on Power Semiconductor Devices and ICs
  • Place of Presentation: ホンコン
  • Year and Date: 2015-05-12
  • Int'l Joint Research
• [Presentation] (111)基板上の{1-10}面を接合面としたダイヤモンド横型p-n接合の作製 (2015)
  • Author(s): 佐藤 一樹, 岩崎 孝之, 清水 麻希,加藤 宙光, 牧野 俊晴, 小倉 政彦, 竹内 大輔, 山崎 聡, 波多野 睦子
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス（神奈川、平塚市）
  • Year and Date: 2015-03-12
• [Presentation] ダイヤモンドJFETのノーマリーオフ動作 (2015)
  • Author(s): 諏訪 泰介, 岩崎 孝之, 佐藤 一樹, 加藤 宙光, 牧野 俊晴, 小倉 政彦, 竹内大輔, 山崎 聡, 波多野 睦子
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス（神奈川、平塚市）
  • Year and Date: 2015-03-12
• [Presentation] Minority carrier injection in diamond power JFETs for on-current improvement (2015)
  • Author(s): T. Iwasaki, H. Kato, J. Yaita, T. Makino, M. Ogura, D. Takauchi, H. Okushi, S. Yamasaki, M. Hatano
  • Organizer: Hasselt Diamond Workshop 2015
  • Place of Presentation: ハッセルト (ベルギー）
  • Year and Date: 2015-02-26
• [Presentation] Normally-off operation of diamond junction FETs (2015)
  • Author(s): T. Suwa, T. Iwasaki, K. Sato, H. Kato, T. Makino, M. Ogura, D. Takeuchi, S. Yamasaki, M. Hatano
  • Organizer: Hasselt Diamond Workshop 2015
  • Place of Presentation: ハッセルト (ベルギー）
  • Year and Date: 2015-02-25
• [Presentation] Fabrication of diamond lateral pn Junctions on (111)substrates (2015)
  • Author(s): K.Sato, T.Iwasaki, M. Shimizu, H.Kato, T.Makino, M.Ogura, D.Takeuchi, S.Nakamura, A.Sawabe, S.Yamasaki, M. Hatano
  • Organizer: Cultuurcentrum Hasselt
  • Place of Presentation: ハッセルト (ベルギー）
  • Year and Date: 2015-02-25
• [Presentation] Heteroepitaxial Growth of Highly-Oriented Diamond Films on Si(001) Substrates with 3C-SiC(001) Buffer Layers (2014)
  • Author(s): Junya Yaita, Takayuki Iwasaki, Mutsuko Hatano
  • Organizer: 2014 MRS Fall Meeting & Exhibit
  • Place of Presentation: ボストン (米国）
  • Year and Date: 2014-12-03
• [Presentation] High Voltage Characteristics and Interface Analysis of Diamond Lateral p-n Junction Devices (2014)
  • Author(s): Takayuki Iwasaki, Junya Yaita, Kazuki Sato, Hiromitsu Kato3, Toshiharu Makino, Masahiko Ogura, Daisuke Takeuchi, Takashi Yatsui, Hideyo Okushi, Satoshi Yamasaki, Mutsuko Hatano
  • Organizer: 2014 MRS Fall Meeting & Exhibit,
  • Place of Presentation: ボストン (米国）
  • Year and Date: 2014-12-01
• [Presentation] (111)基板上の横型p-n接合ダイオードの作製と評価 (2014)
  • Author(s): 佐藤一樹，岩崎孝之，清水麻希，加藤宙光，牧野俊晴，小倉政彦，竹内大輔，山崎 聡，中村新一，澤邊厚仁，波多野睦子
  • Organizer: 第２８回ダイヤモンドシンポジウム
  • Place of Presentation: 東京電機大学東京千住キャンパス（東京都）
  • Year and Date: 2014-11-21
• [Presentation] 先端放電型プラズマCVDを用いた3C-SiC/Si上へのダイヤモンドヘテロエピタキシャル成長 (2014)
  • Author(s): 矢板潤也，岩崎孝之，波多野睦子
  • Organizer: 第２８回ダイヤモンドシンポジウム
  • Place of Presentation: 東京電機大学東京千住キャンパス（東京都）
  • Year and Date: 2014-11-19
• [Presentation] High Voltage Operation and Interface Structure of Diamond Lateral pn Devices (2014)
  • Author(s): T. Iwasaki
  • Organizer: Japan-France Joint Diamond Workshop 2014
  • Place of Presentation: 九大山の家（大分県・玖珠郡）
  • Year and Date: 2014-10-09
  • Invited
• [Presentation] Diamond Junction FETs for Next-generation Power Electronics (2014)
  • Author(s): M.Hatano
  • Organizer: Japan-France Joint Diamond Workshop 2014
  • Place of Presentation: 九大西新プラザ（福岡県・福岡市）
  • Year and Date: 2014-10-06
  • Invited
• [Presentation] 先端放電型プラズマCVDを用いた3C-SiC(001)/Si(001)ウェハ上への高配向ダイヤモンド薄膜合成 (2014)
  • Author(s): 矢板 潤也、岩崎 孝之、 波多野 睦子
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス（北海道・札幌市）
  • Year and Date: 2014-09-17
• [Presentation] （111)基板上のダイヤモンド横型p-n接合の作製 (2014)
  • Author(s): 佐藤一樹、岩崎孝之、清水麻希、加藤宙光、牧野俊晴、小倉雅彦、竹内大輔、山崎聡、波多野睦子
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学札幌キャンパス（北海道・札幌市）
  • Year and Date: 2014-09-17
• [Presentation] Heteroepitaxial growth of diamond films on 3C-SiC (001)/Si substrates by antenna-edge microwave plasma CVD (2014)
  • Author(s): J.Yaita, T.Iwasaki, M.Hatano,
  • Organizer: SSDM2014
  • Place of Presentation: Tsukuba International Congress Center(茨城県・つくば市）
  • Year and Date: 2014-09-09
• [Presentation] 先端放電型プラズマCVDを用いたb-SiC上へのダイヤモンドヘテロエピタキシャル成長 (2014)
  • Author(s): 矢板 潤也, 岩崎 孝之, 波多野 睦子
  • Organizer: 第6１回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県・相模原市）
  • Year and Date: 2014-03-18
• [Presentation] ボトムアップ法を用いたダイヤモンドの選択成長 (2014)
  • Author(s): 古山聡子，岩崎孝之，波多野睦子
  • Organizer: 第6１回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学相模原キャンパス（神奈川県・相模原市）
  • Year and Date: 2014-03-18
• [Presentation] High voltage and high temperature operation of diamond junction FETs with the lateral p-n junctions (2014)
  • Author(s): M. Hatano, T. Iwasaki, K. Tsuzuki, K. Sato, H. Kato, T. Makino, M. Ogura, D. Takeuchi, H. Okushi, S. Yamasaki
  • Organizer: Hasselt Diamond Workshop 2014
  • Place of Presentation: ハッセルト（べルギー）
  • Year and Date: 2014-02-20
  • Invited
• [Presentation] Heteroepitaxial nucleation of diamond on 3C-SiC(001) thin films by antenna-edge microwave plasma CVD (2014)
  • Author(s): T. Iwasaki, J. Yaita, M. Natal, S. E. Saddow, M. Hatano
  • Organizer: Hasselt Diamond Workshop 2014
  • Place of Presentation: ハッセルト（ベルギー）
  • Year and Date: 2014-02-19
• [Presentation] 先進パワー半導体の可能性 ダイヤモンド接合型FET (2013)
  • Author(s): 波多野睦子
  • Organizer: 応用物理学会 第22回SiC及び関連半導体研究
  • Place of Presentation: 埼玉会館（埼玉県・さいたま市）
  • Year and Date: 2013-12-09
  • Invited
• [Presentation] ダイヤモンド接合型電界効果トランジスタの高温・高電圧特性 (2013)
  • Author(s): 岩崎孝之, 星野雄斗, 都築康平, 加藤宙光, 牧野俊晴，小倉政彦，竹内大輔，大串秀世，山崎聡，波多野睦子
  • Organizer: 第27回ダイヤモンドシンポジウム
  • Place of Presentation: 日本工業大学（埼玉県・南埼玉郡）
  • Year and Date: 2013-11-20
• [Presentation] Analysis of Selective Growth of n-Type Diamond in Lateral pn Junction Diodes (2013)
  • Author(s): K. Sato, T. Iwasaki, Y. Hoshino, H. Kato, T. Makino, M. Ogura, S. Yamasaki, S. Nakamura, K. Ichikawa, A. Sawabe, M. Hatano
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス（京都府・京田辺市）
  • Year and Date: 2013-09-19
• [Presentation] High Temperature Performance of Diamond Junction Field Effect Transistors (2013)
  • Author(s): T. Iwasaki, Y. Hoshino, K. Tsuzuki, H. Kato, T. Makino, M. Ogura, D. Takeuchi, H. Okushi, S. Yamasaki, M. Hatano
  • Organizer: 2013 JSAP-MRS Joint Symposia
  • Place of Presentation: 同志社大学京田辺キャンパス（京都府・京田辺市）
  • Year and Date: 2013-09-16
• [Presentation] Monolayer diamond FETs consist of fluorinated graphene channel (2013)
  • Author(s): M.Hatano
  • Organizer: International Conference on Semiconductor technology for ultra large scale integrated circuits and thin film transistors
  • Place of Presentation: グルノーブル（フランス）
  • Year and Date: 2013-07-08
  • Invited
• [Presentation] Diamond Junction Field-Effect Transistors with Lateral pn-junctions for Next Generation Power Devices (2013)
  • Author(s): M.Hatano
  • Organizer: AWAD2013
  • Place of Presentation: ソウル（韓国）
  • Year and Date: 2013-06-27
  • Invited
• [Presentation] Diamond Junction Field-Effect Transistors with Lateral pn-junctions for Next Generation Power Devices (2013)
  • Author(s): M.Hatano
  • Organizer: The first French-Japanese Workshop “Diamond power devices
  • Place of Presentation: シャモニー(フランス）
  • Year and Date: 2013-06-20
  • Invited
• [Patent(Industrial Property Rights)] ダイヤモンド結晶、ダイヤモンド素子、磁気センサー、磁気計測装置、および、センサーアレイの製造方法 (2016)
  • Inventor(s): 波多野睦子、水落憲和、牧野俊晴、加藤宙光、山崎聡、岩崎孝之
  • Industrial Property Rights Holder: 波多野睦子、水落憲和、牧野俊晴、加藤宙光、山崎聡、岩崎孝之
  • Industrial Property Rights Type: 特許
  • Filing Date: 2016-07-18
  • Overseas
• [Patent(Industrial Property Rights)] ダイヤモンド結晶、ダイヤモンド素子、磁気センサー、磁気計測装置、および、センサーアレイの製造方法 (2016)
  • Inventor(s): 波多野睦子、水落憲和、牧野俊晴、加藤宙光、山崎聡、岩崎孝之
  • Industrial Property Rights Holder: 波多野睦子、水落憲和、牧野俊晴、加藤宙光、山崎聡、岩崎孝之
  • Industrial Property Rights Type: 特許
  • Filing Date: 2016-07-20
  • Overseas
• [Patent(Industrial Property Rights)] ダイヤモンド結晶、ダイヤモンド素子、磁気センサー、磁気計測装置、および、センサーアレイの製造方法 (2016)
  • Inventor(s): 波多野睦子、水落憲和、牧野俊晴、加藤宙光、山崎聡、岩崎孝之
  • Industrial Property Rights Holder: 波多野睦子、水落憲和、牧野俊晴、加藤宙光、山崎聡、岩崎孝之
  • Industrial Property Rights Type: 特許
  • Filing Date: 2016-07-20
  • Overseas
• [Patent(Industrial Property Rights)] ダイヤモンド結晶、ダイヤモンド素子、磁気センサー、磁気計測装置、および、センサーアレイの製造方法 (2016)
  • Inventor(s): 波多野睦子、水落憲和、牧野俊晴、加藤宙光、山崎聡、岩崎孝之
  • Industrial Property Rights Holder: 波多野睦子、水落憲和、牧野俊晴、加藤宙光、山崎聡、岩崎孝之
  • Industrial Property Rights Type: 特許
  • Filing Date: 2016-08-17
  • Overseas
• [Patent(Industrial Property Rights)] 半導体装置および測定装置 (2016)
  • Inventor(s): 波多野睦子、岩崎孝之
  • Industrial Property Rights Holder: 波多野睦子、岩崎孝之
  • Industrial Property Rights Type: 特許
  • Industrial Property Number: 2016-044454
  • Filing Date: 2016-03-08
• [Patent(Industrial Property Rights)] ダイヤモンド半導体装置及びその製造方法 (2015)
  • Inventor(s): 加藤宙光、牧野俊晴、小倉政彦、波多野睦子、岩崎孝之外２名
  • Industrial Property Rights Holder: 加藤宙光、牧野俊晴、小倉政彦、波多野睦子、岩崎孝之外２名
  • Industrial Property Rights Type: 特許
  • Filing Date: 2015-12-25
  • Acquisition Date: 2017-04-17
• [Patent(Industrial Property Rights)] ダイヤモンド結晶、ダイヤモンド素子、磁気センサー、磁気計測装置、およびセンサーアレイの製造方法 (2014)
  • Inventor(s): 波多野睦子、岩崎孝之、水落憲和、山崎聡、牧野俊晴、加藤宙光
  • Industrial Property Rights Holder: 波多野睦子、岩崎孝之、水落憲和、山崎聡、牧野俊晴、加藤宙光
  • Industrial Property Rights Type: 特許
  • Filing Date: 2014-01-20