| Budget Amount *help |
¥17,810,000 (Direct Cost: ¥13,700,000、Indirect Cost: ¥4,110,000)
Fiscal Year 2015: ¥1,690,000 (Direct Cost: ¥1,300,000、Indirect Cost: ¥390,000)
Fiscal Year 2014: ¥6,500,000 (Direct Cost: ¥5,000,000、Indirect Cost: ¥1,500,000)
Fiscal Year 2013: ¥9,620,000 (Direct Cost: ¥7,400,000、Indirect Cost: ¥2,220,000)
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| Outline of Final Research Achievements |
Low power loss power devices greatly contribute to a global environmental energy issues. Diamond semiconductor is an attractive material for next-generation power devices due to its wide band-gap, high breakdown field, and high thermal conductivity. By selective n+-type diamond growth, diamond junction field effect transistors (JFETs) were obtained and we confirmed the superior performances of low on resistance (< 5 mΩcm2) and high electric filed (> 5 MV/cm). To increase the on- current, we proposed bipolar-mode operation of the JFETs. We achieved 4-9 times higher drain currents in the bipolar-mode compared with the unipolar-mode operation at a DC current gain of 10. Furthermore, the bipolar-mode currents at the high temperatures of 473 and 573 K became two orders of magnitude larger than the unipolar-mode current at room temperature with a large DC current gain of 102.the bipolar-mode operation in up to 573 K.
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