Preparation of high quality alloy semiconductors and understanding the solute transport mechanism for the fabrication of cascaded thermoelectric devices
Project/Area Number |
25289087
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Research Category |
Grant-in-Aid for Scientific Research (B)
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Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
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Research Institution | Shizuoka University |
Principal Investigator |
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Co-Investigator(Kenkyū-buntansha) |
TATSUOKA HIROKAZU 静岡大学, 工学部, 教授 (40197380)
IKEDA HIROYA 静岡大学, 電子工学研究所, 准教授 (00262882)
MUKANNAN ARIVANANDHA 静岡大学, 電子工学研究所, 助教 (50451620)
OKANO YASUNORI 大阪大学, 基礎工学研究科, 教授 (90204007)
INATOMI YUKO 独立行政法人宇宙航空研究開発機構, 宇宙科学研究本部, 教授 (50249934)
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Project Period (FY) |
2013-04-01 – 2016-03-31
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Project Status |
Completed (Fiscal Year 2015)
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Budget Amount *help |
¥16,510,000 (Direct Cost: ¥12,700,000、Indirect Cost: ¥3,810,000)
Fiscal Year 2015: ¥4,160,000 (Direct Cost: ¥3,200,000、Indirect Cost: ¥960,000)
Fiscal Year 2014: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2013: ¥8,060,000 (Direct Cost: ¥6,200,000、Indirect Cost: ¥1,860,000)
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Keywords | 熱電デバイス / シリコンゲルマニウム / 不純物添加 / 温度差徐冷法 / 溶質輸送 / X線透過法 / 熱電特性 / マグネシウムシリコンゲルマニウム / ゼーベック係数 / 熱伝導率 / 性能指数 / 混晶半導体 / ガリウム / 溶質輸送効果 |
Outline of Final Research Achievements |
In-situ X-ray penetration method was adapted to make clear the dissolution and growth processes of SiGe under the temperature gradient. The effect of solutal convection on the Si transport was clearly demonstrated. Compositionally homogeneous polycrystalline Si1-xGex crystals were grown by a temperature gradient freezing method. In addition, n-type and p-type Si1-xGex crystals were grown and the thermoelectric properties were measured. The ZT values of Ga (1 x 1018 cm-3) doped Si0.68Ge0.32 and Sb (1 x 1019 cm-3) doped Si0.73Ge0.27 were 0.34 and 0.44, respectively which were higher than those of the P-doped SiGe. SiGe nanostructures synthesized by a ball milling method showed the ZT 1.84 which was the highest value of SiGe.
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Report
(4 results)
Research Products
(56 results)
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[Journal Article] High power factor of Ga-doped compositionally homogeneous Si0.68Ge0.32 bulk crystal grown by the vertical temperature gradient freezing method2015
Author(s)
M. Omprakash, M. Arivanandhan, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, D. Aswal, S. Bhattacharya, Y. Okano, T. Ozawa, Y. Inatomi, S.M. Babu, Y. Hayakawa
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Journal Title
Journal of Crystal Growth & Design
Volume: 15
Issue: 3
Pages: 1380-1388
DOI
Related Report
Peer Reviewed / Open Access
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[Journal Article] Thermoelectric performance of layered SrxTiSe2 above 300 K2014
Author(s)
R.Bhatt, S.Bhattacharya, M.Patel, R.Basu, SAhmed, P.Bhatt, AChauhan, M.Navneethan, Y.Hayakawa, A.Singh, D.Aswal and S.Gupta
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Journal Title
Journal of Physics: Condensed Matter
Volume: 26
Issue: 44
Pages: 445002-445002
DOI
Related Report
Peer Reviewed / Open Access
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[Journal Article] High thermoelectric performance of (AgCrSe2)0.5(CuCrSe2)0.5 nanocomposites having all-scale natural hierarchical architectures2014
Author(s)
S.Bhattacharya, A.Bohra, R.Basu, R.Bhatt, S.Ahmad, K.N.Meshram1, A.K.Debnath, A.Singh, S.K.Sarkar, M.Navneethan, Y.Hayakawa, D.K.Aswal and S.K.Gupta
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Journal Title
J.Materials Chemistry A
Volume: 2
Issue: 40
Pages: 17122-17129
DOI
Related Report
Peer Reviewed / Open Access
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[Journal Article] Enhanced thermoelectric properties of Selenium-deficient layered TiSe2-x: A charge-density-wave material2014
Author(s)
Ranu Bhatt, Shvit Bhattacharya, Ranita Basu, Sajid Ahmed, A.K.Chauhan, G.S.Okram, Pramod Bhatt, Mainak Roy, M.Navaneethan, Y.Hayakawa, A.K.Debnath, Ajay Singh, D.K.Aswal and S. K.Gupta
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Journal Title
ACS Applied Materials & Interfaces
Volume: 6
Issue: 21
Pages: 18619-18625
DOI
Related Report
Peer Reviewed / Open Access
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[Journal Article] Analysis of dissolution and growth process of SiGe alloy semiconductor based on penetrated X-ray intensities2014
Author(s)
M. Omprakash, M. Arivanandhan, R. Arun Kumar, H. Morii, T. Aoki, T. Koyama, Y. Momose, H. Ikeda, H. Tatsuoka, Y. Okano, T. Ozawa, S. Moorthy Babu, Y. Inatomi and Y. Hayakawa
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Journal Title
J. Alloy and Compounds
Volume: 590
Pages: 96-101
DOI
Related Report
Peer Reviewed
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[Presentation] Semiconductor crystal growth experiments under microgravity2016
Author(s)
Y.Hayakawa, V.Nirmal Kumar, M.Arivanandhan, G.Rajesh, T.Koyama, Y.Momose, T.Ozawa, K.Sakata, Y.Okano and Y.Inatomi
Organizer
The 3rd Japan-China Workshop on Material Science in Space
Place of Presentation
Ryukyu University (Naha, Okinawa, Japan)
Year and Date
2016-03-26
Related Report
Int'l Joint Research
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[Presentation] Thermoelectric properties of bulk and nanostructure Si1-xGex2016
Author(s)
M.Omprakash, M.Sabarinathan, R.Takatsu, H.Tatsuoka, H.Ikeda, T.Koyama, Y.Momose, D.K.Aswal, S.Bhattacharya, M.Arivanandhan, Y.Inatomi and Y.Hayakawa
Organizer
第27回シリサイド系半導体研究会
Place of Presentation
小山台会館(東京都、品川区)
Year and Date
2016-03-22
Related Report
Invited
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[Presentation] Thermoelectric properties of compositionally homogeneous P and N-type SiGe bulk crystals2015
Author(s)
M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, D.K.Aswal, S.Bhattacharya, Y.Okano, Y.Inatomi and Y.Hayakawa
Organizer
The 17th Takayanagi Kenjiro memorial symposium
Place of Presentation
Shizuoka University (Hamamatsu, Shizuoka, Japan)
Year and Date
2015-11-17
Related Report
Int'l Joint Research
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[Presentation] Growth properties of InGaSb ternary alloys under Microgravity and normal gravity conditions2015
Author(s)
V.Nirmal Kumar, M.Arivanandhan, T.Koyama, Y.Momose, Y.Inatomi, K.Sakata, T.Ishikawa, M.Takayanagi, S.Yoda, Y.Kamigaichi, T.Ozawa, Y.Okano and Y.Hayakawa
Organizer
The Joint Conference of 6th International Symposium on Physical Sciences in Space and 10th International Conference on Two-Phase Systems for Space and Ground Applications
Place of Presentation
Doshisha University (Kyoto, Kyoto, Japan)
Year and Date
2015-09-14
Related Report
Int'l Joint Research
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[Presentation] Morphological change of S/L interface in semiconductor solution growth under reduced convention condition2015
Author(s)
Y.Inatomi, M.Arivanandhan, V.Nirmal Kumar, H.Mirsandi, T.Koyama, Y.Momose, T.Ozawa, T.Ishikawa, Y.Okano and Y.Hayakawa
Organizer
30th International Symposium on Space Technology and Science
Place of Presentation
Kobe Convention Center (Kobe, Hyogo, Japan)
Year and Date
2015-07-04
Related Report
Int'l Joint Research
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[Presentation] Thermoelectric properties of compositionally homogeneous p and n-type SiGe bulk crystals2015
Author(s)
M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano T.Ozawa, Y.Inatomi, S. Bhattacharya, D.K.Aswal, S.Moorthy Babu and Y.Hayakawa
Organizer
第62回応用物理学春季学術講演会
Place of Presentation
東海大学湘南キャンパス、神奈川県平塚市
Year and Date
2015-03-11 – 2015-03-14
Related Report
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[Presentation] Growth of homogeneous p-type and n-type Si1-xGex for thermoelectric application2015
Author(s)
Y.Hayakawa, M.Arivanandhan, M.Omprakash, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa. Y.Inatomi, D.K.Aswal, S.Bhattacharya and S.Moorthy Babu
Organizer
International Conference on Nanoscience and Nanotechnology (ICONN 2015), IL-20, pp.20 (February 4th – 6th, 2015, Department of Physics and Nanotechnology
Place of Presentation
SRM University, Kattankulathur, Kancheepuram, India
Year and Date
2015-02-04 – 2015-02-06
Related Report
Invited
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[Presentation] Growth of compositionally homogeneous P-type SiGe bulk and thermoelectric properties2015
Author(s)
M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, D.K.Aswal, S.Bhattacharya, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
International Symposium toward the Future of Advanced Researches in Shizuoka University
Place of Presentation
Shizuoka University, Hamamatsu, Shizuoka
Year and Date
2015-01-27 – 2015-01-28
Related Report
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[Presentation] Thermoelectric properties of compositionally homogeneous Ga-doped SiGe bulk crystals2014
Author(s)
Y.Hayakawa, M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi and S. Moorthy Babu
Organizer
12th European Conference on Thermoelectricity (ECT2014)
Place of Presentation
Madrid, Spain
Year and Date
2014-09-24 – 2014-09-26
Related Report
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[Presentation] Growth of compositionally homogeneous P-type Si1-xGex bulk crystal for thermoelectric application2014
Author(s)
M.Omprakash, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu, D.K. Aswal, S. Bhattacharya and Y.Hayakawa
Organizer
第74回応用物理学会学術講演会
Place of Presentation
(北海道大学札幌キャンパス、北海道札幌市
Year and Date
2014-09-17 – 2014-09-20
Related Report
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[Presentation] In-situ observation of dissolution and growth processes of Si1-xGex in different temperature gradient2014
Author(s)
M.Omprakash, M.Arivanandhan, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
13th International Conference on Global Research and Education (Inter-Academia 2014)
Place of Presentation
Riga Technical University, Riga, Latvia
Year and Date
2014-09-10 – 2014-09-12
Related Report
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[Presentation] Ga doped Si1-xGex bulk crystal with homogenous compositon and its thermoelectric properties2014
Author(s)
M.Omprakash, V. Nirmal Kumar, M.Arivanandhan, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
International Conference and Summar School on Advanced Silicide Technology 2014
Place of Presentation
Tokyo University of Science, Katsushika Campus, Katsushika, Tokyo
Year and Date
2014-07-19 – 2014-07-21
Related Report
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[Presentation] Thermoelectric properties of Ga doped SiGe bulk crystal2014
Author(s)
M.Omprakash, M.Arivanandhan, P.ANANDAN, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
第61回応用物理学関係連合講演会
Place of Presentation
青山学院大学 (神奈川県淵野辺市)
Related Report
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[Presentation] A novel method for the in-situ observation of dissolution and growth process of alloy semiconductor2014
Author(s)
M.Arivanandhan, M.Omprakash, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
International Conference on Materials and Characterization Techniques (ICMCT 2014)
Place of Presentation
VIT University, Vellore, India
Related Report
Invited
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[Presentation] In-situ Observation of Crystal Growth of SiGe by X-ray Penetration Method2013
Author(s)
M.Omprakash, M.Arivanandhan, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
10th Materails Science School for Young Scientists, Kinkenn Wakata 2013
Place of Presentation
Kinnkenn, Sendai, Japan
Related Report
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[Presentation] Temprature gradient effect on dissolution and growth process of SiGe bulk crystal2013
Author(s)
M.Omprakash, M.Arivanandhan, R.Arun Kumar, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
The 15th Takayanagi Kenjiro memorial symposium
Place of Presentation
Shizuoka University, Hamamatsu, Japan
Related Report
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[Presentation] In-situ observation of SiGe growth process based on penetrated X-ray intensities2013
Author(s)
M.Omprakash, M.Arivanandhan, R.Arun Kumar, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
第43回結晶成長国内会議
Place of Presentation
長野市生涯学習センター(長野市生涯学習センター)
Related Report
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[Presentation] Effect of solute transport and growth process of SiGe bulk crystal2013
Author(s)
M.Omprakash, M.Arivanandhan, R. Arun Kumar, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka,Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
The 2013 Korean-Japanese-Student Workshop
Place of Presentation
Shizuoka University, Hamamatsu, Japan
Related Report
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[Presentation] Methods to grow homogenous SiGe bulk crystal for thermoelectric application2013
Author(s)
M.Omprakash, M.Arivanandhan, R. Arun Kumar, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka,Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
Asia-Pacific Conference on Green Technology with Silicides and Related Materials (APAC-Silicide 2013)
Place of Presentation
University of TsukubaTsukuba, Japan
Related Report
Invited
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[Presentation] Investigation on growth mechanism of SiGe by X-ray penetration method2013
Author(s)
M.Omprakash, M.Arivanandhan, R. Arun Kumar, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka,Y.Okano, T.Ozawa, Y.Inatomi, S.Moorthy Babu and Y.Hayakawa
Organizer
The 32nd International Conference on Thermoelectrics
Place of Presentation
Kobe International Conference Center, Kobe, Japa
Related Report
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[Presentation] The dissolution process of Si into Ge melt and SiGe growth mechanism by X-ray penetration method2013
Author(s)
M.Omprakash, M.Arivanandhan, R.A.Kumar, H.Morii, T.Aoki, T.Koyama, Y.Momose, H.Ikeda, H.Tatsuoka, Y.Okano, T.Ozawa, Y. Inatomi, S.Moorth Babu, and Y. Hayakawa
Organizer
電子情報通信学会、電子部品・材料研究会
Place of Presentation
静岡大学(静岡県浜松市)
Related Report
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