| Project/Area Number |
25289088
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| Research Category |
Grant-in-Aid for Scientific Research (B)
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| Allocation Type | Partial Multi-year Fund |
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| Section | 一般 |
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| Research Field |
Electronic materials/Electric materials
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| Research Institution | Yamaguchi University |
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Principal Investigator |
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| Co-Investigator(Kenkyū-buntansha) |
YAMADA Youichi 山口大学, 大学院理工学研究科, 教授 (00251033)
SAKAI Akira 大阪大学, 基礎工学研究科, 教授 (20314031)
OKADA Narihito 山口大学, 大学院理工学研究科, 助教 (70510684)
山根 啓輔 山口大学, 理工学研究科, 助教 (80610815)
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| Project Period (FY) |
2013-04-01 – 2016-03-31
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| Project Status |
Completed (Fiscal Year 2015)
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| Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2015: ¥5,590,000 (Direct Cost: ¥4,300,000、Indirect Cost: ¥1,290,000)
Fiscal Year 2014: ¥5,070,000 (Direct Cost: ¥3,900,000、Indirect Cost: ¥1,170,000)
Fiscal Year 2013: ¥6,630,000 (Direct Cost: ¥5,100,000、Indirect Cost: ¥1,530,000)
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| Keywords | GaN / 半極性面 / MOVPE / HVPE / 転位 / サファイア基板 / 積層欠陥 / GaN基板 / 研磨 |
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| Outline of Final Research Achievements |
In this study, we have focused on the research and development of the growth of free standing large sized semipolar {20-2-1} GaN substrate, which are promising for realizing high performance optical and power devices. A {20-21} GaN was grown from a c-plane-like sapphire sidewall of {22-43} patterned sapphire substrates (PSS) by metal-organic vapor phase epitaxy (MOVPE) and hydride vapor phase epitaxy (HVPE). On the other hand, a {20-2-1} GaN was grown from a nitrided c-plane-like sapphire sidewall of {22-43} PSS by MOVPE. However, the {20-2-1} GaN was not grown on the PSS with good reproducibility.
We demonstrated the thick growth of a {20-2-1} GaN on the back surface of {20-21} GaN substrate by HVPE. We found that the dark spot density in the {20-2-1} GaN layer decreased more rapidly than that in the {20-21} GaN layer as growth thickness increased.
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