Non-Thermal-Equilibrium Solid-Phase Crystallization of GeSn-on-Insulator on Si Platform
Project/Area Number |
25289089
|
Research Category |
Grant-in-Aid for Scientific Research (B)
|
Allocation Type | Partial Multi-year Fund |
Section | 一般 |
Research Field |
Electronic materials/Electric materials
|
Research Institution | Kyushu University |
Principal Investigator |
MIYAO Masanobu 九州大学, システム情報科学研究科(研究院, 特任教授 (60315132)
|
Co-Investigator(Kenkyū-buntansha) |
SADOH Taizoh 九州大学, 大学院システム情報科学研究院, 准教授 (20274491)
|
Project Period (FY) |
2013-04-01 – 2016-03-31
|
Project Status |
Completed (Fiscal Year 2015)
|
Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2015: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2014: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2013: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
|
Keywords | 電気・電子材料 / 半導体 / Si系ヘテロ半導体 / Si系ヘテロ半導体 |
Outline of Final Research Achievements |
To improve performance of Si large-scale integrated circuits by employing high-performance GeSn devices, non-thermal equilibrium growth process of GeSn with Sn concentration exceeding the solid-solubility of Sn in Ge has been investigated. On the basis of the results, a technique for lateral growth of GeSn on insulator is developed. As a result, Ge-on-insulator structures with high Sn concentration (≧8%) are achieved on Si platform.
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Report
(4 results)
Research Products
(55 results)