| Budget Amount *help |
¥17,290,000 (Direct Cost: ¥13,300,000、Indirect Cost: ¥3,990,000)
Fiscal Year 2015: ¥4,290,000 (Direct Cost: ¥3,300,000、Indirect Cost: ¥990,000)
Fiscal Year 2014: ¥5,850,000 (Direct Cost: ¥4,500,000、Indirect Cost: ¥1,350,000)
Fiscal Year 2013: ¥7,150,000 (Direct Cost: ¥5,500,000、Indirect Cost: ¥1,650,000)
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| Outline of Final Research Achievements |
To improve performance of Si large-scale integrated circuits by employing high-performance GeSn devices, non-thermal equilibrium growth process of GeSn with Sn concentration exceeding the solid-solubility of Sn in Ge has been investigated. On the basis of the results, a technique for lateral growth of GeSn on insulator is developed. As a result, Ge-on-insulator structures with high Sn concentration (≧8%) are achieved on Si platform.
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