Study on novel isoelectronic traps in GaAs and control of their optical properties for the development of advanced quantum light source
| Project/Area Number |
25289091
|
|---|
| Research Category |
Grant-in-Aid for Scientific Research (B)
|
| Allocation Type | Partial Multi-year Fund |
|---|
| Section | 一般 |
|---|
| Research Field |
Electronic materials/Electric materials
|
|---|
| Research Institution | National Institute for Materials Science |
|---|
Principal Investigator |
SAKUMA Yoshiki 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, グループリーダー (60354346)
|
|---|
| Co-Investigator(Kenkyū-buntansha) |
IKEZAWA MICHIO 筑波大学, 数理物質科学研究科, 准教授 (30312797)
|
|---|
| Project Period (FY) |
2013-04-01 – 2016-03-31
|
| Project Status |
Completed (Fiscal Year 2015)
|
| Budget Amount *help |
¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000)
Fiscal Year 2015: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000)
Fiscal Year 2014: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000)
Fiscal Year 2013: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
|
|---|
| Keywords | 量子閉じ込め / 単一不純物 / 励起子 / 単一光子 / 等電子トラップ / フォトニック結晶 / パーセル効果 / MOCVD / 量子ドット / 結晶工学 / 半導体物性 / 光物性 |
|---|
| Outline of Final Research Achievements |
To make single-photon sources with identical emission energy and intensity, a research on controlling the optical properties of nitrogen (N) isoelectronic impurities, which were doped in GaAs, has been done. We clarified that the emission energy of N isoelectronic traps can be varied by using AlGaAs/GaAs:N/AlGaAs quantum well structures. In addition, we also demonstrated that the spontaneous emission rate from the N isoelectronic trap embedded in an L3-type microcavity within photonic crystal is enhanced by Purcell effect.
|
Report
(4 results)
Research Products
(84 results)
-
-
-
[Journal Article] Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion2015
Author(s)
N. Ha, T. Mano, Y.-L. Chou, Y.-N Wu, S.-J. Cheng, J. Bocquel, P. M. Koenraad, A. Ohtake, Y. Sakuma, K. Sakoda, and T. Kuroda
-
Journal Title
Physical Review B
Volume: 92
Issue: 7
DOI
Related Report
Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Journal Article] Symmetric quantum dots as efficient sources of highly entangled photons : Violation of Bell ' s inequality without spectral and temporal filtering2013
Author(s)
T. Kuroda, T. Mano, N. Ha, H. Nakajima, H Kumano, B. Urbaszek, M. Jo, M. Abbarachi, Y. Sakuma, K. Sakoda, I Suemune, X. Marie, T. Amand
-
Journal Title
Physical Review B
Volume: Vol. 88
Issue: 4
DOI
Related Report
Peer Reviewed
-
-
-
-
-
-
[Presentation] Ultralow g(2)(0) single-photon emission from 1.5 μm-quantum dot using cryogen-free refrigerator system2016
Author(s)
T. Miyazawa, K. Takemoto, Y. Nambu, S. Miki, T. Yamashita, H. Terai, M. Fujiwara, M. Sasaki, Y. Sakuma, M. Takatsu, T. Yamamoto, Y. Arakawa
Organizer
PLMCN-17
Place of Presentation
東大寺総合文化センター（奈良市）
Year and Date
2016-03-28
Related Report
Int'l Joint Research
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
[Presentation] Recent development of droplet epitaxy in NIMS: InAs QDs on InP(111)A for telecom-application and reconstruction-dependent Ga droplet formation on GaAs (100)2014
Author(s)
T. Mano, A. Ohtake, T. Kuroda, N. Ha, X. Liu, K. Mitsuishi, A. Hagiwara, J. Nakamura, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, and K. Sakoda
Organizer
2nd Workshop Droplet Epitaxy of Semiconductor Nanostructures
Place of Presentation
Milano (イタリア）
Year and Date
2014-05-16
Related Report
Invited
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
