Study on novel isoelectronic traps in GaAs and control of their optical properties for the development of advanced quantum light source

• Project/Area Number: 25289091
• Research Category: Grant-in-Aid for Scientific Research (B)
• Allocation Type: Partial Multi-year Fund
• Section: 一般
• Research Field: Electronic materials/Electric materials
• Research Institution: National Institute for Materials Science
• Principal Investigator: SAKUMA Yoshiki 国立研究開発法人物質・材料研究機構, 先端フォトニクス材料ユニット, グループリーダー (60354346)
• Co-Investigator(Kenkyū-buntansha): IKEZAWA MICHIO 筑波大学, 数理物質科学研究科, 准教授 (30312797)
• Project Period (FY): 2013-04-01 – 2016-03-31
• Project Status: Completed (Fiscal Year 2015)
• Budget Amount: ¥16,120,000 (Direct Cost: ¥12,400,000、Indirect Cost: ¥3,720,000); Fiscal Year 2015: ¥2,990,000 (Direct Cost: ¥2,300,000、Indirect Cost: ¥690,000); Fiscal Year 2014: ¥4,680,000 (Direct Cost: ¥3,600,000、Indirect Cost: ¥1,080,000); Fiscal Year 2013: ¥8,450,000 (Direct Cost: ¥6,500,000、Indirect Cost: ¥1,950,000)
• Keywords: 量子閉じ込め / 単一不純物 / 励起子 / 単一光子 / 等電子トラップ / フォトニック結晶 / パーセル効果 / MOCVD / 量子ドット / 結晶工学 / 半導体物性 / 光物性

Outline of Final Research Achievements

To make single-photon sources with identical emission energy and intensity, a research on controlling the optical properties of nitrogen (N) isoelectronic impurities, which were doped in GaAs, has been done. We clarified that the emission energy of N isoelectronic traps can be varied by using AlGaAs/GaAs:N/AlGaAs quantum well structures. In addition, we also demonstrated that the spontaneous emission rate from the N isoelectronic trap embedded in an L3-type microcavity within photonic crystal is enhanced by Purcell effect.

Research Products

• [Journal Article] Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy (2015)
  • Author(s): N. Ishida, M. Jo, T. Mano, Y. Sakuma, T. Noda, and D. Fujita
  • Journal Title: Nanoscale Volume: 7 Issue: 40 Pages: 16773-16780
  • DOI: 10.1039/c5nr04193g
  • Peer Reviewed
• [Journal Article] Quantum key distribution over 120 km using ultrahigh purity single-photon source and superconducting single-photon detectors (2015)
  • Author(s): K. Takemoto, Y. Nambu, T. Miyazawa, Y. Sakuma, T. Yamamoto, S. Yorozu, and Y. Arakawa
  • Journal Title: SCIENTIFIC REPORTS Volume: 5 Issue: 1
  • DOI: 10.1038/srep14383
  • Peer Reviewed
• [Journal Article] Size-dependent line broadening in the emission spectra of single GaAs quantum dots: Impact of surface charge on spectral diffusion (2015)
  • Author(s): N. Ha, T. Mano, Y.-L. Chou, Y.-N Wu, S.-J. Cheng, J. Bocquel, P. M. Koenraad, A. Ohtake, Y. Sakuma, K. Sakoda, and T. Kuroda
  • Journal Title: Physical Review B Volume: 92 Issue: 7
  • DOI: 10.1103/physrevb.92.075306
  • Peer Reviewed / Int'l Joint Research / Acknowledgement Compliant
• [Journal Article] Growth and optical properties of GaSb/GaAs type-II quantum dots with and without wetting layer (2015)
  • Author(s): T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
  • Journal Title: Jpn. J. Appl. Phys. Volume: 54 Issue: 4S Pages: 04DH01-04DH01
  • DOI: 10.7567/jjap.54.04dh01
  • NAID: 210000145025
  • Peer Reviewed
• [Journal Article] Lateral current generation in n-AlGaAs/GaAs heterojunction channels by Schottky-barrier gate illumination (2015)
  • Author(s): T. Kawazu, T. Noda, Y. Sakuma, and H. Sakaki
  • Journal Title: Appl. Phys. Lett. Volume: 106 Issue: 2
  • DOI: 10.1063/1.4905661
  • Peer Reviewed
• [Journal Article] Droplet epitaxy growth of telecom InAs quantum dots on metamorphic InAlAs/GaAs(111)A (2015)
  • Author(s): N. Ha, T. Mano, T. Kuroda, K. Mitsuishi, A. Ohtake, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, and K. Sakoda
  • Journal Title: Jpn. J. Appl. Phys. Volume: 54 Issue: 4S Pages: 04DH07-04DH07
  • DOI: 10.7567/jjap.54.04dh07
  • NAID: 210000145031
  • Peer Reviewed
• [Journal Article] Voltage dependence of two-step photocurrent generation in quantum dot intermediate band solar cells (2015)
  • Author(s): M. Elborg, T. Noda, T. Mano, M. Jo, Y. Sakuma, K. Sakoda, and L. Han
  • Journal Title: Sol. Energy Mat. Sol. Cells Volume: 134 Pages: 108-113
  • DOI: 10.1016/j.solmat.2014.11.038
  • Peer Reviewed
• [Journal Article] Vanishing fine structure splittings in telecom wavelength quantum dots grown on (111)A surfaces by droplet epitaxy (2014)
  • Author(s): X. Liu, N. Ha, H. Nakajima, T. Mano, T. Kuroda, B. Urbaszek, H. Kumano, I. Suemune, Y. Sakuma, and K. Sakoda
  • Journal Title: Phys. Rev. B Volume: 90 Issue: 8
  • DOI: 10.1103/physrevb.90.081301
  • Peer Reviewed / Open Access
• [Journal Article] Growth of GaSb and AlSb quantum dots on high index GaAs substrates (2014)
  • Author(s): T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
  • Journal Title: Appl. Phys. Express Volume: 7 Issue: 5 Pages: 055502-055502
  • DOI: 10.7567/apex.7.055502
  • NAID: 210000137096
  • Peer Reviewed
• [Journal Article] Growth of GaSb quantum dots on GaAs (111)A (2014)
  • Author(s): T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
  • Journal Title: e-Journal of Surface Science and Nanotechnology Volume: 12 Issue: 0 Pages: 304-306
  • DOI: 10.1380/ejssnt.2014.304
  • NAID: 130004933817
  • ISSN: 1348-0391
  • Peer Reviewed / Open Access
• [Journal Article] Droplet epitaxial growth of highly symmetric quantum dots emitting at telecommuni -cation wavelengths on InP (111)A (2014)
  • Author(s): N. Ha, X. Liu, T. Mano, T. Kuroda, K. Mitsuishi, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, K. Sakoda
  • Journal Title: Applied Physics Letters Volume: Vol. 104 Issue: 14 Pages: 143106-143106
  • DOI: 10.1063/1.4870839
  • Peer Reviewed
• [Journal Article] Recombination dynamics of excitons bound to nitrogen isoelectronic centers in delta-doped GaP (2014)
  • Author(s): P.St-Jean, G. Ethier-Majcher, Y. Sakuma, and S. Francoeur
  • Journal Title: Phys. Rev. B Volume: 89 Issue: 7
  • DOI: 10.1103/physrevb.89.075308
  • Peer Reviewed
• [Journal Article] Tight-binding analysis of the electronic states in AlAs with N isoelectronic impurities (2014)
  • Author(s): Masafumi Jo, Takaaki Mano, Yoshiki Sakuma, Kazuaki Sakoda
  • Journal Title: Journal of Applied Physics Volume: 115 Issue: 12 Pages: 123501-123501
  • DOI: 10.1063/1.4869261
  • Peer Reviewed
• [Journal Article] Post-growth annealing of GaSb quantum dots in GaAs formed by droplet epitaxy (2013)
  • Author(s): T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
  • Journal Title: Phys. Status Solidi C Volume: 10 Issue: 11 Pages: 1505-1508
  • DOI: 10.1002/pssc.201300121
  • Peer Reviewed
• [Journal Article] Size-dependentcontactangleofGadropletsonGaAs (2013)
  • Author(s): Masafumi Jo, Takaaki Mano,Yoshiki Sakuma,Kazuaki Sakoda
  • Journal Title: Journal of Crystal Growth Volume: 378 Pages: 5-7
  • DOI: 10.1016/j.jcrysgro.2012.12.129
  • Peer Reviewed
• [Journal Article] Self-assemblyofGadropletsattachedtoGaAsquantumdots (2013)
  • Author(s): Martin Elborg, Takeshi Noda, Takaaki Mano, Masafumi Jo, Yoshiki Sakuma, Kazuaki Sakoda
  • Journal Title: Journal of Crystal Growth Volume: 378 Pages: 53-56
  • DOI: 10.1016/j.jcrysgro.2012.12.155
  • Peer Reviewed
• [Journal Article] Growth of GaSb quantum dots on GaAs (311)A (2013)
  • Author(s): T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
  • Journal Title: J. Cryst. Growth Volume: 378 Pages: 475-479
  • DOI: 10.1016/j.jcrysgro.2012.11.020
  • Peer Reviewed
• [Journal Article] Impacts of ambipolar carrier escape on current-voltage characteristics in a type-I quantum-well solar cell (2013)
  • Author(s): M. Jo, Y. Ding, T. Noda, T. Mano, Y. Sakuma, K. Sakoda, L. Han, H. Sakaki
  • Journal Title: Appl. Phys. Lett Volume: 103, 6 Issue: 6
  • DOI: 10.1063/1.4818510
  • Peer Reviewed
• [Journal Article] Symmetric quantum dots as efficient sources of highly entangled photons : Violation of Bell ' s inequality without spectral and temporal filtering (2013)
  • Author(s): T. Kuroda, T. Mano, N. Ha, H. Nakajima, H Kumano, B. Urbaszek, M. Jo, M. Abbarachi, Y. Sakuma, K. Sakoda, I Suemune, X. Marie, T. Amand
  • Journal Title: Physical Review B Volume: Vol. 88 Issue: 4
  • DOI: 10.1103/physrevb.88.041306
  • Peer Reviewed
• [Journal Article] Single Photon Generation from an Impurity Center with Well-Defined Emission Energy in GaAs (2013)
  • Author(s): L. Zhang, M. Ikezawa, T. Mori, S. Umehara, Y. Sakuma, K. Sakoda, and Y. Masumoto
  • Journal Title: Jpn. J. Appl. Phys. Volume: Vol.52 Issue: 4S Pages: 04CG11-04CG11
  • DOI: 10.7567/jjap.52.04cg11
  • NAID: 210000142068
  • Peer Reviewed
• [Journal Article] Photo-induced current in n-AlGaAs/ GaAs heterojunction channels driven by local illumination at the edge regions of Hall bar (2013)
  • Author(s): T. Kawazu, T. Noda, T. Mano, Y. Sakuma, H. Sakaki
  • Journal Title: Appl. Phys. Lett Volume: 102, 25 Issue: 25 Pages: 252104-252104
  • DOI: 10.1063/1.4812293
  • Peer Reviewed
• [Presentation] Direct visualization of the N impurity state in dilute GaNAs using scanning tunneling microscopy (2016)
  • Author(s): N. Ishida, M. Jo, T. Mano, T. Noda, Y. Sakuma, and D. Fujita
  • Organizer: IVC20 第20回 国際真空学術会議・展示会
  • Place of Presentation: Busan（韓国）
  • Year and Date: 2016-08-21
  • Int'l Joint Research
• [Presentation] Droplet epitaxy quantum dots in ultra-high efficiency solar cells (2016)
  • Author(s): M. Elborg, T. Noda, T. Mano, Y. Yao, and Y. Sakuma
  • Organizer: QD 2016
  • Place of Presentation: Jeju（韓国）
  • Year and Date: 2016-05-22
  • Int'l Joint Research
• [Presentation] Study on coherence time and indistinguishability of single photons from nitrogen impurity centers in GaAs (2016)
  • Author(s): M. Ikezawa, L. Zhang, Y. Sakuma, K. Sakoda, Y. Masumoto
  • Organizer: QD 2016
  • Place of Presentation: Jeju（韓国）
  • Year and Date: 2016-05-22
  • Int'l Joint Research
• [Presentation] Ultralow g(2)(0) single-photon emission from 1.5 μm-quantum dot using cryogen-free refrigerator system (2016)
  • Author(s): T. Miyazawa, K. Takemoto, Y. Nambu, S. Miki, T. Yamashita, H. Terai, M. Fujiwara, M. Sasaki, Y. Sakuma, M. Takatsu, T. Yamamoto, Y. Arakawa
  • Organizer: PLMCN-17
  • Place of Presentation: 東大寺総合文化センター（奈良市）
  • Year and Date: 2016-03-28
  • Int'l Joint Research
• [Presentation] GaAs中の窒素発光中心から発生した光子の量子干渉 (2016)
  • Author(s): 張遼、池沢道男、佐久間芳樹、迫田和彰、舛本泰章
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東工大大岡山キャンパス（東京都）
  • Year and Date: 2016-03-19
• [Presentation] 微傾斜GaAs(111)B基板上に作製したGaSbタイIIナノロッドの光学異方性 (2016)
  • Author(s): 川津琢也、野田武司、佐久間芳樹、榊裕之
  • Organizer: 第63回応用物理学会春季学術講演会
  • Place of Presentation: 東工大大岡山キャンパス（東京都）
  • Year and Date: 2016-03-19
• [Presentation] 長距離量子暗号通信を実現する単一光子源技術 (2016)
  • Author(s): 竹本一矢、宮澤俊之、南部芳弘、三木茂人、山下太郎、寺井弘高、藤原幹生、佐々木雅英、佐久間芳樹、高津求、山本剛之、萬伸一、荒川泰彦
  • Organizer: 新しい光源技術と応用的研究・開発 （電子情報通信学会）
  • Place of Presentation: 九州大学伊都キャンパス（福岡市）
  • Year and Date: 2016-03-15
  • Invited
• [Presentation] Growth of coupled quantum dot-ring structures by multiple-droplet epitaxy process (2016)
  • Author(s): M. Elborg, T. Noda, and Y. Sakuma
  • Organizer: MANA International Symposium 2016
  • Place of Presentation: エポカル（つくば市）
  • Year and Date: 2016-03-09
  • Int'l Joint Research
• [Presentation] Direct visualization of the N impurity state in dilute GaNAs using cross-sectional scanning tunneling microscopy (2016)
  • Author(s): N. Ishida, M. Jo, T. Mano, T. Noda, Y. Sakuma, and D. Fujita
  • Organizer: ISPlasma2016/IC-PLANTS2016
  • Place of Presentation: 名古屋大学（名古屋市）
  • Year and Date: 2016-03-06
  • Int'l Joint Research
• [Presentation] (111)A基板上の格子不整合系エピタキシーの諸現象：ドット形成と歪み緩和の理解と制御にむけて (2015)
  • Author(s): 間野高明、大竹晃浩、Ha Neul、黒田隆、佐久間芳樹、迫田和彰
  • Organizer: 第11回量子ナノ材料セミナー
  • Place of Presentation: 電気通信大学（調布市）
  • Year and Date: 2015-12-08
  • Invited
• [Presentation] 可搬型冷凍機を用いた1.5 μm 帯超高純度単一光子発生器 (2015)
  • Author(s): 宮澤俊之、竹本一矢、南部芳弘、三木茂人、山下太郎、寺井弘高、藤原幹生、佐々木雅英、佐久間芳樹、高津求、山本剛之、荒川泰彦
  • Organizer: 第33回量子情報技術研究会(QIT33)
  • Place of Presentation: NTT厚木研究開発センター（厚木市）
  • Year and Date: 2015-11-24
• [Presentation] Dependence of open-circuit voltage in GaNAs/AlGaAs quantum structure solar cells on N concentration (2015)
  • Author(s): M. Elborg, T. Noda, and Y. Sakuma
  • Organizer: PVSEC-25
  • Place of Presentation: Busan（韓国）
  • Year and Date: 2015-11-15
  • Int'l Joint Research
• [Presentation] Resonant excitation of single luminescence centers in GaAs:N (2015)
  • Author(s): M. Ikezawa, N. Yasuda, L. Zhang, Y. Sakuma, K. Sakoda, and Y. Masumoto
  • Organizer: SSDM 2015
  • Place of Presentation: 札幌コンベンションセンター（札幌市）
  • Year and Date: 2015-09-27
• [Presentation] Droplet epitaxy GaAs/AlGaAs quantum dot embedded solar cells with enhanced sub-band gap light absorption (2015)
  • Author(s): M. Elborg, T. Noda, T. Mano, and Y. Sakuma
  • Organizer: German MBE-Workshop 2015
  • Place of Presentation: Paderborn（ドイツ）
  • Year and Date: 2015-09-21
  • Int'l Joint Research
• [Presentation] Probing carrier transport by surface excitation of GaNAs/GaAs quantum structure embedded solar cells with zero valance band offset (2015)
  • Author(s): M. Elborg, T. Noda, and Y. Sakuma
  • Organizer: 31st European PVSEC
  • Place of Presentation: Hamburg（ドイツ）
  • Year and Date: 2015-09-14
  • Int'l Joint Research
• [Presentation] Impact of surface charge on spectrally diffusive photoluminescence in GaAs quantum dots grown by droplet epitaxy (2015)
  • Author(s): N. Ha、間野高明、黒田隆、S.-J. Cheng、P. M. Koenraad、大竹晃浩、佐久間芳樹、迫田和彰
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（名古屋市）
  • Year and Date: 2015-09-13
• [Presentation] ショットキバリアゲート光照射によるn-AlGaAs/GaAsヘテロ接合チャネルの面内電流生成 (2015)
  • Author(s): 川津琢也、野田武司、佐久間芳樹、榊裕之
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（名古屋市）
  • Year and Date: 2015-09-13
• [Presentation] GaAs(111)A基板上の高対称性量子ドットLEDの作製 (2015)
  • Author(s): 間野高明、黒田隆、N. Ha、野田武司、佐久間芳樹、迫田和彰
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（名古屋市）
  • Year and Date: 2015-09-13
• [Presentation] He循環型冷凍機を用いた超高純度1.5 μm帯単一光子発生器 (2015)
  • Author(s): 宮澤俊之、竹本一矢、南部芳弘、三木茂人、山下太郎、寺井弘高、藤原幹生、佐々木雅英、佐久間芳樹、高津求、山本剛之、荒川泰彦
  • Organizer: 第76回応用物理学会秋季学術講演会
  • Place of Presentation: 名古屋国際会議場（名古屋市）
  • Year and Date: 2015-09-13
• [Presentation] GaAs中の窒素発光中心を利用した単一光子源 (2015)
  • Author(s): 池沢道男、張遼、武田寛之、池田直樹、杉本善正、佐久間芳樹、迫田和彰、舛本泰章
  • Organizer: 光・量子計測シンポジウム
  • Place of Presentation: つくば国際会議場（つくば市）
  • Year and Date: 2015-09-09
  • Invited
• [Presentation] Non-classical light generation from isoelectronic traps embedded in photonic crystal microcavities (2015)
  • Author(s): M. Ikezawa, Y. Yamada, Y. Sakuma, L. Zhang, H. Takeda, N. Ikeda, Y. Sugimoto, K. Sakoda, and Y. Masumoto
  • Organizer: EP2DS-21/MSS-17
  • Place of Presentation: 仙台国際センター（仙台市）
  • Year and Date: 2015-07-26
  • Int'l Joint Research
• [Presentation] Prospects for high efficiency intermediate band solar cells using dilute nitride III-V semiconductors (2015)
  • Author(s): M. Elborg, T. Noda, and Y. Sakuma
  • Organizer: RESD 2015
  • Place of Presentation: Thimphu（ブータン王国）
  • Year and Date: 2015-06-15
  • Int'l Joint Research
• [Presentation] Single photon generation from nitrogen isoelectronic traps in III-V semiconductors (2015)
  • Author(s): 池沢道男、張遼、佐久間芳樹、武田寛之、池田直樹、杉本善正、迫田和彰、舛本泰章
  • Organizer: Korea-Japan Joint Symp. on Semiconductor Physics and Technology
  • Place of Presentation: Daejeon（韓国）
  • Year and Date: 2015-04-22
  • Int'l Joint Research
• [Presentation] Entangled photon emission at temperatures up to 60 K from droplet epitaxial quantum dots (2015)
  • Author(s): X. Liu, T. Kuroda, T. Mano, H. Nakajima, H. Kumano, I. Suemune, Y. Sakuma, K. Sakoda
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス（神奈川県平塚市）
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] GaSb/GaAs量子ドットの光学異方性における後熱処理の効果 (2015)
  • Author(s): 川津琢也、野田武司、佐久間芳樹、榊裕之
  • Organizer: 第62回応用物理学会春季学術講演会
  • Place of Presentation: 東海大学湘南キャンパス（神奈川県平塚市）
  • Year and Date: 2015-03-11 – 2015-03-14
• [Presentation] Open-circuit voltage recovery in dilute-N GaAs/AlGaAs quantum structure solar cells (2015)
  • Author(s): M. Elborg, T. Noda, and Y. Sakuma
  • Organizer: MANA International Symposium 2015
  • Place of Presentation: つくば国際会議場（つくば市）
  • Year and Date: 2015-03-11 – 2015-03-13
• [Presentation] Direct visualization of N impurity state in GaAs using STM (2014)
  • Author(s): N. Ishida, M. Jo, T. Mano, T. Noda, Y. Sakuma, and D. Fujita
  • Organizer: 22nd International Colloquium on Scanning Probe Microscopy
  • Place of Presentation: 熱川ハイツ（静岡県東伊東町）
  • Year and Date: 2014-12-11 – 2014-12-13
• [Presentation] Non-classical light generation from isoelectronic centers embedded in photonic crystal microcavities (2014)
  • Author(s): M. Ikezawa, Y. Yamada, Y. Sakuma, L. Zhang, H. Takeda, N. Ikeda, Y. Sugimoto, K. Sakoda, and Y. Masumoto
  • Organizer: Recent Progress of Photonic Devices and Materials
  • Place of Presentation: 神戸大学（神戸市）
  • Year and Date: 2014-11-13 – 2014-11-14
• [Presentation] Direct visualization of N impurity state in GaAs using STM (2014)
  • Author(s): N. Ishida, M. Jo, T. Mano, T. Noda, Y. Sakuma, and D. Fujita
  • Organizer: The 7th International Symposium on Surface Science
  • Place of Presentation: くにびきメッセ（島根県松江市）
  • Year and Date: 2014-11-02 – 2014-11-06
• [Presentation] 高指数面GaAs基板上のGaSbおよびAlSb量子ドットの成長 (2014)
  • Author(s): 川津琢也、野田武司、間野高明、佐久間芳樹、榊裕之
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学（札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] フォトニック結晶共振器に埋め込まれた等電子トラップからの非古典光発生 (2014)
  • Author(s): 山田雄太、張遼、池沢道男、武田寛之、池田直樹、杉本善正、佐久間芳樹、迫田和彰、舛本泰章
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学（札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] 液滴エピタキシー法によるInP(111)A基板上InAs量子ドット成長過程における濡れ層形成とその制御 (2014)
  • Author(s): N. Ha、間野高明、X. Liu、黒田隆、三石和貴、大竹晃浩、野田武司、佐久間芳樹、迫田和彰
  • Organizer: 第75回応用物理学会秋季学術講演会
  • Place of Presentation: 北海道大学（札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] 液滴エピタキシー法による格子緩和したInAlAs/InAs/GaAs(111)A上の1.55ミクロン発光するInAs量子ドットの作製 (2014)
  • Author(s): N. Ha、間野高明、X. Liu、黒田隆、三石和貴、大竹晃浩、野田武司、佐久間芳樹、迫田和彰
  • Organizer: 第75回応用物理学秋季学術講演会
  • Place of Presentation: 北海道大学（札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] STMによるGaAs中N不純物準位の直接可視化 (2014)
  • Author(s): 石田暢之、定昌史、間野高明、野田武司、佐久間芳樹、藤田大介
  • Organizer: 第75回応用物理学秋季学術講演会
  • Place of Presentation: 北海道大学（札幌市）
  • Year and Date: 2014-09-17 – 2014-09-20
• [Presentation] Growth and optical properties of GaSb/GaAs type-II quantum dots with and without wetting layer (2014)
  • Author(s): T. Kawazu, T. Noda, T. Mano, Y. Sakuma, and H. Sakaki
  • Organizer: 2014 Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: つくば国際会議場（つくば市）
  • Year and Date: 2014-09-08 – 2014-09-11
• [Presentation] Droplet epitaxial growth of 1.55 um wavelength InAs quantum dots on metamorphic InAlAs/GaAs (111)A (2014)
  • Author(s): N. Ha, T. Mano, X. Liu, T. Kuroda, K. Mitsuishi, A. Ohtake, A. Castellano, T. Noda, Y. Sakuma, and K. Sakoda
  • Organizer: 2014 Int. Conf. on Solid State Devices and Materials
  • Place of Presentation: つくば国際会議場（つくば市）
  • Year and Date: 2014-09-08 – 2014-09-11
• [Presentation] 発光エネルギーの揃ったGaAs中の窒素発光中心の位相緩和 (2014)
  • Author(s): 張遼、池沢道男、佐久間芳樹、迫田和彰、舛本泰章
  • Organizer: 日本物理学会 2014年秋季大会
  • Place of Presentation: 中部大学（愛知県春日井市）
  • Year and Date: 2014-09-07 – 2014-09-10
• [Presentation] 等電子トラップを埋め込んだフォトニック結晶共振器の光学特性 (2014)
  • Author(s): 山田雄太、張遼、池沢道男、武田寛之、池田直樹、杉本善正、佐久間芳樹、迫田和彰、舛本泰章
  • Organizer: 日本物理学会 2014年秋季大会
  • Place of Presentation: 中部大学（愛知県春日井市）
  • Year and Date: 2014-09-07 – 2014-09-10
• [Presentation] Yellow single-photon emission from nitrogen impurity centers in AlAs (2014)
  • Author(s): M. Jo, T. Mano, T. Kuroda, Y. Sakuma, and K. Sakoda
  • Organizer: SPIE 2014
  • Place of Presentation: San Diego （米国）
  • Year and Date: 2014-08-17 – 2014-08-21
• [Presentation] Multi-exciton binding in droplet epitaxially grown InAs/InP(111)A quantum dots at telecommunication wavelengths (2014)
  • Author(s): X. Liu, N. Ha, T. Kuroda, T. Mano, Y. Sakuma, and K. Sakoda
  • Organizer: ICPS 2014
  • Place of Presentation: Austin （米国）
  • Year and Date: 2014-08-10 – 2014-08-15
• [Presentation] Characterization of potential profile in multiple quantum well solar cell by using cross-sectional Kelvin probe force microscopy (2014)
  • Author(s): N. Ishida, T. Noda, T. Mano, Y. Sakuma, L. Han, and D. Fujita
  • Organizer: Non-contact atomic force microscopy 2014
  • Place of Presentation: つくば国際会議場（つくば市）
  • Year and Date: 2014-08-04 – 2014-08-08
• [Presentation] 自己形成による量子ドットの作製技術・光学特性とその応用 (2014)
  • Author(s): 佐久間芳樹、間野高明
  • Organizer: 量子ドットの作製技術・構造制御と応用
  • Place of Presentation: 技術情報協会（東京、五反田）
  • Year and Date: 2014-07-24
  • Invited
• [Presentation] Recent development of droplet epitaxy in NIMS: InAs QDs on InP(111)A for telecom-application and reconstruction-dependent Ga droplet formation on GaAs (100) (2014)
  • Author(s): T. Mano, A. Ohtake, T. Kuroda, N. Ha, X. Liu, K. Mitsuishi, A. Hagiwara, J. Nakamura, A. Castellano, S. Sanguinetti, T. Noda, Y. Sakuma, and K. Sakoda
  • Organizer: 2nd Workshop Droplet Epitaxy of Semiconductor Nanostructures
  • Place of Presentation: Milano (イタリア）
  • Year and Date: 2014-05-16
  • Invited
• [Presentation] InAs quantum dots formed on InP(111)A by droplet epitaxy (2014)
  • Author(s): T. Mano, N. Ha, X. Liu, T. Kuroda, K. Mitsuishi, T. Noda, A. Castellano, S. Sanguinetti, Y. Sakuma, and K. Sakoda
  • Organizer: 8th International conference on Quantum Dots
  • Place of Presentation: Pisa（イタリア）
  • Year and Date: 2014-05-11 – 2014-05-16
• [Presentation] InAs薄膜を用いたGaAs(111)A面上格子緩和InGaAsの成長
  • Author(s): 間野高明ほか
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学（相模原市）
• [Presentation] Formation of InAs quantum dots on InP(111)A by droplet epitaxy and their optical emission at 1.3μm and 1.55μm
  • Author(s): N. Haほか
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学（相模原市）
• [Presentation] GaNAs/AlGaAs with close-to-ideal absorption energies for intermediate band solar cell application
  • Author(s): E. Martinほか
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学（相模原市）
• [Presentation] 単一発光中心の共鳴励起による単一光子発生
  • Author(s): 池沢道男ほか
  • Organizer: 第61回応用物理学会春季学術講演会
  • Place of Presentation: 青山学院大学（相模原市）
• [Presentation] ナノスケールヘテロ接合の形成とデバイス特性
  • Author(s): 佐久間芳樹ほか
  • Organizer: 「グリーン・ナノエレクトロニクスのコア技術開発」最終成果報告会
  • Place of Presentation: イイノホール＆カンファレンスセンター（東京都）
  • Invited
• [Presentation] NIMSにおける量子ナノ構造研究の進展 －液滴量子ドットと等電子トラップを中心に－
  • Author(s): 佐久間芳樹ほか
  • Organizer: 第９回量子ナノ材料セミナー
  • Place of Presentation: 阿南工専（徳島県）
  • Invited
• [Presentation] Spectral broadening in height controlled single GaAs quantum dots formed by droplet epitaxy
  • Author(s): N. Haほか
  • Organizer: 12th International Conference on ACSIN
  • Place of Presentation: つくば国際会議場（つくば市）
• [Presentation] 共鳴励起準位の選択による量子ドット単一光子発生器の純度改善
  • Author(s): 宮澤俊之ほか
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京田辺市）
• [Presentation] 1.5μｍ帯量子ドット単一光子源を用いた100km量子鍵配布
  • Author(s): 南部芳弘ほか
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京田辺市）
• [Presentation] Growth of strain-relaxed InGaAs on GaAs (111)A
  • Author(s): N. Haほか
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京田辺市）
• [Presentation] 液滴エピタキシー法による格子整合系量子ナノ構造の自己形成とその光物性
  • Author(s): 間野高明ほか
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京田辺市）
  • Invited
• [Presentation] 試料端局所照射によるn-AlGaAs/GaAsヘテロ接合チャネルの光電流
  • Author(s): 川津琢也ほか
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京田辺市）
• [Presentation] Two-step photocurrent generation in droplet epitaxy GaAs/AlGaAs QD-IBSCs
  • Author(s): E. Martinほか
  • Organizer: 第74回応用物理学会秋季学術講演会
  • Place of Presentation: 同志社大学（京田辺市）
• [Presentation] Formation of isoelectronic localized states with well-defined emission energy in δ-doped GaAs:N
  • Author(s): Y. Sakumaほか
  • Organizer: EWMOVPE 2013
  • Place of Presentation: アーヘン（ドイツ）
• [Presentation] Post-growth annealing of GaSb quantum dots in GaAs formed by droplet epitaxy
  • Author(s): T. Kawazuほか
  • Organizer: The 40th ISCS
  • Place of Presentation: 神戸国際会議場（神戸市）
• [Presentation] Suppression of multi-photon emission in 1.5μm quantum-dot single-photon source
  • Author(s): T. Miyazawaほか
  • Organizer: IPRM 2013
  • Place of Presentation: 神戸コンベンションセンター（神戸市）
• [Remarks] 量子ナノ構造グループ
  • URL: http://www.nims.go.jp/units/apm/qns/index.html
• [Remarks] 量子ナノ構造グループ
  • URL: http://www.nims.go.jp/units/apm/qns/
• [Remarks] http://www.nims.go.jp/units/apm/qns/